ʻO nā mea lawe Graphite i uhi ʻia me SiC, ka uhi ʻana o sic, ka uhi ʻana o SiC i uhi ʻia me ka substrate Graphite no Semiconductor

Uhi ʻia ka silikona carbideʻO ka diski graphite ka hoʻomākaukau ʻana i ka papa pale silicon carbide ma luna o ka graphite ma o ka waiho ʻana o ka mahu kino a kemika paha a me ka pīpī ʻana. Hiki ke hoʻopaʻa paʻa ʻia ka papa pale silicon carbide i hoʻomākaukau ʻia i ka matrix graphite, e hoʻolilo i ka ʻili o ke kumu graphite i mānoanoa a ʻaʻohe hakahaka, e hāʻawi ana i ka matrix graphite i nā waiwai kūikawā, me ke kū'ē ʻana i ka oxidation, ke kū'ē ʻana i ka waikawa a me ka alkali, ke kū'ē ʻana i ka erosion, ke kū'ē ʻana i ka corrosion, a pēlā aku. I kēia manawa, ʻo Gan coating kekahi o nā mea nui loa no ka ulu ʻana o ka silicon carbide epitaxial.

ʻO ka semiconductor carbide Silicon ka mea nui o ka semiconductor ākea ākea i hoʻomohala hou ʻia. Loaʻa i kāna mau mea hana nā ʻano o ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa voltage kiʻekiʻe, ke alapine kiʻekiʻe, ka mana kiʻekiʻe a me ke kūpaʻa radiation. Loaʻa iā ia nā pono o ka wikiwiki hoʻololi wikiwiki a me ka pono kiʻekiʻe. Hiki iā ia ke hōʻemi nui i ka hoʻohana ʻana i ka mana huahana, hoʻomaikaʻi i ka pono o ka hoʻololi ikehu a hōʻemi i ka nui o ka huahana. Hoʻohana nui ʻia ia i ka kamaʻilio 5g, ka pale aupuni a me ka ʻoihana koa. ʻO ke kahua RF i hōʻike ʻia e ka aerospace a me ke kahua uila mana i hōʻike ʻia e nā kaʻa ikehu hou a me ka "ʻoihana hou" he mau manaʻolana mākeke maopopo a koʻikoʻi hoʻi ma nā kahua kīwila a me nā kahua koa.

ʻO ke substrate Silicon carbide ka mea nui o ka semiconductor ākea ākea i hoʻomohala hou ʻia. Hoʻohana nui ʻia ka substrate Silicon carbide i nā uila microwave, nā uila mana a me nā ʻoihana ʻē aʻe.Aia ia ma ka hopena mua o ke kaulahao ʻoihana semiconductor ākea ākea a ʻo ia ka mea koʻikoʻi a me ke kumu kumu. Hiki ke hoʻokaʻawale ʻia ka substrate carbide silikona i ʻelua ʻano: semi insulating a me conductive. I waena o lākou, he kiʻekiʻe ke kū'ē ʻana o ka substrate silicon carbide semi insulating (resistivity ≥ 105 Ω· cm). Hiki ke hoʻohana ʻia ka substrate semi insulating i hui pū ʻia me ka heterogeneous gallium nitride epitaxial sheet ma ke ʻano he mea o nā mea RF, ka mea i hoʻohana nui ʻia i ka kamaʻilio 5g, ka pale aupuni a me ka ʻoihana koa ma nā hiʻohiʻona ma luna; ʻO kekahi he substrate silicon carbide conductive me ka resistivity haʻahaʻa (ʻo ka pae resistivity he 15 ~ 30m Ω· cm). Hiki ke hoʻohana ʻia ka epitaxy homogeneous o ka substrate silicon carbide conductive a me ka silicon carbide ma ke ʻano he mea no nā mea mana. ʻO nā hiʻohiʻona noi nui he mau kaʻa uila, nā ʻōnaehana mana a me nā kahua ʻē aʻe.