Izithwali ze-Graphite Ezimbozwe yi-SiC, ukumbozwa kwe-sic, ukumbozwa kwe-SiC okumbozwe yi-substrate ye-Graphite ye-Semiconductor

I-silicon carbide embozweIdiski ye-graphite iwukulungiselela ungqimba lokuvikela lwe-silicon carbide ebusweni be-graphite ngokufaka umusi ngokomzimba noma ngamakhemikhali kanye nokufutha. Ungqimba lokuvikela lwe-silicon carbide olulungiselelwe lungahlanganiswa ngokuqinile ne-graphite matrix, okwenza ubuso besisekelo se-graphite bube bukhulu futhi bungabi nama-voids, okunikeza i-graphite matrix izakhiwo ezikhethekile, okuhlanganisa ukumelana ne-oxidation, ukumelana ne-asidi ne-alkali, ukumelana nokuguguleka, ukumelana nokugqwala, njll. Njengamanje, ukugqoka kwe-Gan kungenye yezingxenye eziyinhloko ezinhle kakhulu zokukhula kwe-epitaxial kwe-silicon carbide.

I-silicon carbide semiconductor iyinto eyinhloko ye-semiconductor esanda kuthuthukiswa ye-wide band gap. Amadivayisi ayo anezici zokumelana nokushisa okuphezulu, ukumelana nogesi ophezulu, imvamisa ephezulu, amandla aphezulu kanye nokumelana nemisebe. Inezinzuzo zesivinini sokushintsha okusheshayo kanye nokusebenza kahle okuphezulu. Inganciphisa kakhulu ukusetshenziswa kwamandla omkhiqizo, ithuthukise ukusebenza kahle kokuguqulwa kwamandla futhi inciphise ivolumu yomkhiqizo. Isetshenziswa kakhulu ekuxhumaneni kwe-5g, ukuvikela kuzwelonke kanye nemboni yezempi. Insimu ye-RF emelelwa yizindiza kanye nensimu ye-elekthronikhi yamandla emelelwa yizimoto zamandla ezintsha kanye "nengqalasizinda entsha" inamathemba emakethe acacile futhi abalulekile kokubili emikhakheni yomphakathi neyezempi.

I-substrate ye-silicon carbide iyinto eyinhloko ye-semiconductor ye-wide band gap esanda kuthuthukiswa. I-substrate ye-silicon carbide isetshenziswa kakhulu kuma-electronics e-microwave, kuma-electronics kagesi nakwamanye amasimu. Isekugcineni kwangaphambili kochungechunge lwe-semiconductor lwe-wide band gap futhi iyinto esezingeni eliphezulu neyisisekelo. I-Silicon carbide substrate ingahlukaniswa ngezinhlobo ezimbili: i-semi insulating kanye ne-conductive. Phakathi kwazo, i-semi insulating silicon carbide substrate inokumelana okuphezulu (ukumelana ≥ 105 Ω· cm). I-semi insulating substrate ehlanganiswe ne-gallium nitride epitaxial sheet epitaxial exubile ingasetshenziswa njengezinto zamadivayisi e-RF, ezisetshenziswa kakhulu ekuxhumaneni kwe-5g, ukuvikela kwezwe kanye nemboni yezempi kulezi zigcawu ezingenhla; Enye i-conductive silicon carbide substrate enokumelana okuphansi (ububanzi bokumelana buyi-15 ~ 30m Ω· cm). I-epitaxy efanayo ye-conductive silicon carbide substrate kanye ne-silicon carbide ingasetshenziswa njengezinto zamadivayisi kagesi. Izimo eziyinhloko zokusetshenziswa yizimoto zikagesi, izinhlelo zamandla kanye nezinye izinkambu.