Sideyaasha Garaafiga ee SiC ee Dahaaran, dahaarka sic, dahaarka SiC ee lagu dahaadhay substrate-ka Garaafiga ee Semiconductor-ka

Silicon carbide dahaarka lehsaxanka graphite waa in lagu diyaariyo lakabka ilaalinta silicon carbide dusha sare ee graphite iyadoo la adeegsanayo dhigista uumiga jirka ama kiimikada iyo buufinta. Lakabka ilaalinta silicon carbide ee la diyaariyey waxaa si adag loogu xidhi karaa matrix-ka graphite, taasoo ka dhigaysa dusha sare ee saldhigga graphite mid cufan oo ka xor ah madhan, taasoo siinaysa matrix-ka graphite sifooyin gaar ah, oo ay ku jiraan iska caabbinta oksaydhka, iska caabbinta aashitada iyo alkali, iska caabbinta nabaad-guurka, iska caabbinta daxalka, iwm. Waqtigan xaadirka ah, dahaarka Gan waa mid ka mid ah qaybaha ugu wanaagsan ee ugu muhiimsan koritaanka epitaxial ee silicon carbide.

Semiconductor-ka Silicon carbide waa agabka ugu muhiimsan ee semiconductor-ka farqiga ballaaran ee cusub ee la sameeyay. Qalabkiisu wuxuu leeyahay astaamo u adkeysiga heerkulka sare, iska caabbinta danab sare, soo noqnoqoshada sare, awoodda sare iyo iska caabbinta shucaaca. Waxay leedahay faa'iidooyinka xawaaraha wareejinta degdega ah iyo hufnaanta sare. Waxay si weyn u yareyn kartaa isticmaalka awoodda wax soo saarka, waxay hagaajin kartaa hufnaanta beddelka tamarta waxayna yareyn kartaa mugga wax soo saarka. Waxaa inta badan loo isticmaalaa isgaarsiinta 5g, difaaca qaranka iyo warshadaha militariga. Goobta RF oo ay matalaan hawada sare iyo goobta elektaroonigga korontada oo ay matalaan gawaarida tamarta cusub iyo "kaabayaasha cusub" waxay leeyihiin rajo suuq oo cad oo la taaban karo oo ku saabsan goobaha rayidka iyo militariga labadaba.

Substrate-ka carbide-ka ee silikoon waa walaxda ugu muhiimsan ee semiconductor-ka gap-ka ballaaran ee cusub ee la sameeyay. Substrate-ka carbide-ka silikoon waxaa inta badan loo isticmaalaa makiroweyfka elektarooniga, qalabka elektarooniga korontada iyo meelaha kale.. Waxay ku taal dhammaadka hore ee silsiladda warshadaha semiconductor-ka ee farqiga ballaaran waana maaddada furaha ugu muhiimsan ee ugu casrisan uguna aasaasiga ah. Substrate-ka carbide-ka silicon waxaa loo qaybin karaa laba nooc: dahaarka nus-dabka iyo dahaarka. Kuwaas waxaa ka mid ah, substrate-ka carbide-ka silicon ee nus-dabka leh wuxuu leeyahay iska caabin sare (iska caabin ≥ 105 Ω· cm). Substrate-ka semi-dabka leh oo lagu daray xaashida epitaxial-ka gallium nitride ee kala duwan ayaa loo isticmaali karaa agabka aaladaha RF, kaas oo inta badan loo isticmaalo isgaarsiinta 5g, difaaca qaranka iyo warshadaha militariga muuqaallada kor ku xusan; Tan kale waa substrate-ka carbide-ka silicon ee dahaarka leh oo leh iska caabin hoose (kala duwanaanshaha iska caabinta waa 15 ~ 30m Ω· cm). Epitaxy-ga isku midka ah ee substrate-ka carbide-ka silicon ee dahaarka leh iyo carbide-ka silicon waxaa loo isticmaali karaa agab ahaan aaladaha korontada. Xaaladaha codsiga ugu muhiimsan waa gawaarida korontada, nidaamyada korontada iyo meelaha kale.