ʻO ka ʻenehana koʻikoʻi no ka ulu ʻana oʻO ka epitaxial SiCʻO nā mea hana mua ka ʻenehana kaohi kīnā, ʻoi aku hoʻi no ka ʻenehana kaohi kīnā i maʻalahi i ka hāʻule ʻana o ka hāmeʻa a i ʻole ka hōʻino ʻana o ka hilinaʻi. ʻO ke aʻo ʻana i ke ʻano o nā kīnā substrate e hoʻolōʻihi ana i ka papa epitaxial i ka wā o ke kaʻina ulu epitaxial, nā kānāwai hoʻoili a me ka hoʻololi ʻana o nā kīnā ma ka pilina ma waena o ka substrate a me ka papa epitaxial, a me ke ʻano nucleation o nā kīnā ke kumu no ka wehewehe ʻana i ka pilina ma waena o nā kīnā substrate a me nā kīnā kūkulu epitaxial, hiki ke alakaʻi pono i ka nānā ʻana o ka substrate a me ka hoʻonui ʻana i ke kaʻina hana epitaxial.
ʻO nā kīnā onā papa epitaxial silicon carbideua māhele nui ʻia i ʻelua mau māhele: nā kīnā kristal a me nā kīnā morphology o ka ʻili. ʻO nā kīnā kristal, me nā kīnā kiko, nā dislocations screw, nā hemahema microtubule, nā dislocations edge, a me nā mea ʻē aʻe, ʻo ka hapa nui mai nā hemahema ma nā substrates SiC a hoʻolaha i loko o ka papa epitaxial. Hiki ke nānā pololei ʻia nā hemahema morphology o ka ʻili me ka maka ʻōlohelohe me ka hoʻohana ʻana i kahi microscope a he mau ʻano morphological maʻamau. ʻO nā hemahema morphology o ka ʻili e pili ana i: Scratch, Triangular defect, Carrot defect, Downfall, a me Particle, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4. I ka wā o ke kaʻina hana epitaxial, ʻo nā ʻāpana haole, nā hemahema substrate, ka hōʻino ʻana o ka ʻili, a me nā deviations o ke kaʻina hana epitaxial e hoʻopilikia paha i ke ʻano ulu ʻanuʻu kūloko, e hopena ana i nā hemahema morphology o ka ʻili.
Papa 1. Nā kumu no ka hoʻokumu ʻia ʻana o nā hemahema matrix maʻamau a me nā hemahema morphology o ka ʻili ma nā papa epitaxial SiC
Nā hemahema kiko
Hoʻokumu ʻia nā hemahema kiko e nā hakahaka a i ʻole nā hakahaka ma kahi kiko lattice hoʻokahi a i ʻole kekahi mau kiko lattice, a ʻaʻohe o lākou hoʻonui ākea. Hiki ke loaʻa nā hemahema kiko i kēlā me kēia kaʻina hana hana, ʻoi aku hoʻi i ka hoʻokomo ʻana o ka ion. Eia nō naʻe, he paʻakikī ke ʻike, a he paʻakikī hoʻi ka pilina ma waena o ka hoʻololi ʻana o nā hemahema kiko a me nā hemahema ʻē aʻe.
Nā Micropipe (MP)
ʻO nā micropipes he mau dislocations hollow screw e pālahalaha ana ma ke axis ulu, me kahi vector Burgers <0001>. ʻO ke anawaena o nā microtubes mai kahi hapa o ka micron a i nā ʻumi microns. Hōʻike nā microtubes i nā hiʻohiʻona ʻili nui e like me ka lua ma luna o ka ʻili o nā wafers SiC. ʻO ka maʻamau, ʻo ka nui o nā microtubes ma kahi o 0.1 ~ 1cm-2 a ke hoʻomau nei i ka emi ʻana i ka nānā ʻana i ka maikaʻi o ka hana wafer kalepa.
Nā dislocations wili (TSD) a me nā dislocations lihi (TED)
ʻO nā dislocations ma SiC ke kumu nui o ka hōʻino ʻana a me ka hāʻule ʻana o ka hāmeʻa. Holo nā dislocations screw (TSD) a me nā dislocations edge (TED) ma ke axis ulu, me nā vectors Burgers o <0001> a me 1/3<11–20>, kēlā me kēia.
Hiki i nā dislocations screw (TSD) a me nā dislocations edge (TED) ke hoʻolōʻihi mai ka substrate a i ka ʻili wafer a lawe mai i nā hiʻohiʻona ʻili liʻiliʻi e like me ka lua (Kiʻi 4b). ʻO ka maʻamau, ʻo ka nui o nā dislocations edge ma kahi o 10 mau manawa o nā dislocations screw. ʻO nā dislocations screw i hoʻolōʻihi ʻia, ʻo ia hoʻi, e hoʻolōʻihi ana mai ka substrate a i ka epilayer, hiki ke hoʻololi i nā hemahema ʻē aʻe a hoʻolaha ma ke axis ulu. I ka wāʻO ka epitaxial SiCulu ʻana, hoʻololi ʻia nā dislocations wili i nā stacking faults (SF) a i ʻole nā kīnā kāloti, ʻoiai ua hōʻike ʻia nā dislocations lihi i nā epilaiers e hoʻololi ʻia mai nā basal plane dislocations (BPDs) i hoʻoilina ʻia mai ka substrate i ka wā o ka ulu ʻana o ka epitaxial.
Ka hoʻoneʻe ʻana o ka mokulele kumu (BPD)
Aia ma ka mokulele basal SiC, me kahi vector Burgers o 1/3 <11–20>. ʻAʻole ʻike pinepine ʻia nā BPD ma ka ʻili o nā wafers SiC. Hoʻopili pinepine ʻia lākou ma ka substrate me ka density o 1500 cm-2, ʻoiai ʻo ko lākou density ma ka epilayer he 10 cm-2 wale nō. Hōʻike ka ʻike ʻana o nā BPD me ka hoʻohana ʻana i ka photoluminescence (PL) i nā hiʻohiʻona linear, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4c. I ka wāʻO ka epitaxial SiCi ka ulu ʻana, hiki ke hoʻololi ʻia nā BPD i hoʻonui ʻia i nā hewa stacking (SF) a i ʻole nā dislocations edge (TED).
Nā hewa hoʻopaʻa (SFs)
Nā hemahema i ke kaʻina stacking o ka mokulele basal SiC. Hiki ke ʻike ʻia nā hewa stacking ma ka papa epitaxial ma o ka hoʻoilina ʻana i nā SF i loko o ka substrate, a i ʻole e pili ana i ka hoʻonui ʻana a me ka hoʻololi ʻana o nā dislocations mokulele basal (BPDs) a me nā dislocations screw threading (TSDs). Ma keʻano laulā, ʻoi aku ka liʻiliʻi o ka density o SFs ma mua o 1 cm-2, a hōʻike lākou i kahi hiʻohiʻona triangular ke ʻike ʻia me ka hoʻohana ʻana iā PL, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4e. Eia nō naʻe, hiki ke hoʻokumu ʻia nā ʻano hewa stacking like ʻole ma SiC, e like me ke ʻano Shockley a me ke ʻano Frank, no ka mea, ʻoiai kahi liʻiliʻi o ka haunaele ikehu stacking ma waena o nā mokulele hiki ke alakaʻi i kahi ʻano like ʻole i ke kaʻina stacking.
Hiolo ʻana
ʻO ke kīnā hāʻule ʻana ma muli o ka hāʻule ʻana o nā ʻāpana ma nā paia o luna a me nā ʻaoʻao o ke keʻena hopena i ka wā o ke kaʻina ulu ʻana, hiki ke hoʻomaikaʻi ʻia ma ka hoʻomaikaʻi ʻana i ke kaʻina mālama manawa o nā mea hoʻopau graphite o ke keʻena hopena.
ʻEha ʻekolu ʻaoʻao
He hoʻokomo polytype 3C-SiC ia e hoʻolōʻihi ana i ka ʻili o ka epilayer SiC ma ke kuhikuhi o ka mokulele basal, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4g. Hiki ke hana ʻia e nā ʻāpana e hāʻule ana ma ka ʻili o ka epilayer SiC i ka wā o ka ulu ʻana o ka epitaxial. Hoʻokomo ʻia nā ʻāpana i loko o ka epilayer a hoʻopilikia i ke kaʻina hana ulu, e hopena ana i nā hoʻokomo polytype 3C-SiC, e hōʻike ana i nā hiʻohiʻona ʻili triangular ʻoi me nā ʻāpana i loaʻa ma nā piko o ka ʻāpana triangular. Ua hoʻopili pū nā haʻawina he nui i ke kumu o nā hoʻokomo polytype i nā ʻōpala ʻili, nā micropipes, a me nā palena kūpono ʻole o ke kaʻina hana ulu.
Kāloti kīnā
ʻO kahi kīnā kāloti he hui hewa stacking me ʻelua mau wēlau i loaʻa ma nā mokulele kristal basal TSD a me SF, i hoʻopau ʻia e kahi dislocation ʻano Frank, a ʻo ka nui o ka hemahema kāloti e pili ana i ka hewa stacking prismatic. ʻO ka hui pū ʻana o kēia mau hiʻohiʻona e hana i ke ʻano o ka ʻili o ka hemahema kāloti, kahi e like me ke ʻano kāloti me ka density ma lalo o 1 cm-2, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4f. Hoʻokumu maʻalahi ʻia nā hemahema kāloti ma nā ʻōpala polishing, TSDs, a i ʻole nā hemahema substrate.
Nā ʻōpala
ʻO nā ʻōpala he mau hōʻino mīkini ma ka ʻili o nā wafers SiC i hana ʻia i ka wā o ke kaʻina hana, e like me ka mea i hōʻike ʻia ma ke Kiʻi 4h. Hiki i nā ʻōpala ma ka substrate SiC ke hoʻopilikia i ka ulu ʻana o ka epilayer, hana i kahi lālani o nā dislocations kiʻekiʻe i loko o ka epilayer, a i ʻole hiki i nā ʻōpala ke lilo i kumu no ka hoʻokumu ʻana o nā kīnā kāloti. No laila, he mea nui e hoʻopili pono i nā wafers SiC no ka mea hiki i kēia mau ʻōpala ke loaʻa ka hopena koʻikoʻi i ka hana o ka hāmeʻa ke ʻike ʻia lākou ma kahi hana o ka hāmeʻa.
Nā hemahema morphology ʻili ʻē aʻe
ʻO ka ʻāpana ʻokiʻoki kahi kīnā ʻili i hoʻokumu ʻia i ka wā o ke kaʻina ulu epitaxial SiC, kahi e hana ai i nā huinakolu obtuse a i ʻole nā hiʻohiʻona trapezoidal ma ka ʻili o ka epilayer SiC. Nui nā hemahema ʻili ʻē aʻe, e like me nā lua ʻili, nā puʻupuʻu a me nā ʻōpala. ʻO ka maʻamau, hana ʻia kēia mau hemahema e nā kaʻina ulu i hoʻomaikaʻi ʻole ʻia a me ka wehe piha ʻole ʻana o ka pohō polishing, kahi e hoʻopilikia maikaʻi ʻole ai i ka hana o ka hāmeʻa.
Ka manawa hoʻouna: Iune-05-2024