Itekhnoloji ephambili yokukhula kweI-SiC epitaxializixhobo kuqala yiteknoloji yokulawula iziphene, ingakumbi kwiteknoloji yokulawula iziphene enokuchaphazeleka kukungasebenzi kakuhle kwesixhobo okanye ukonakala kokuthembeka. Uphononongo lwendlela yokusebenza kweziphene ze-substrate ezifikelela kwi-epitaxial layer ngexesha lenkqubo yokukhula kwe-epitaxial, imithetho yokudlulisa nokuguqula iziphene kwindawo ephakathi kwe-substrate kunye ne-epitaxial layer, kunye nendlela yokwakheka kweziphene sisiseko sokucacisa ulwalamano phakathi kweziphene ze-substrate kunye neziphene zesakhiwo se-epitaxial, ezinokukhokela ngempumelelo ukuhlolwa kwe-substrate kunye nokwenza ngcono inkqubo ye-epitaxial.
Iziphene zeiileya ze-epitaxial ze-silicon carbideZahlulwe kakhulu zibe ziindidi ezimbini: iziphene zekristale kunye neziphene zemo yobuso. Iziphene zekristale, kuquka iziphene zenqaku, ukuqhekeka kwezikrufu, iziphene ze microtubule, ukuqhekeka komphetho, njl.njl., ikakhulu zivela kwiziphene ezikwii-substrates zeSiC kwaye zisasazeka ziye kumaleko we-epitaxial. Iziphene zemo yobuso zinokubonwa ngqo ngeliso lenyama kusetyenziswa imakroskopu kwaye zineempawu eziqhelekileyo zemo yobuso. Iziphene zemo yobuso ziquka ikakhulu: Ukukrwela, isiphene esingunxantathu, isiphene seCarrot, ukuwa, kunye neParticle, njengoko kubonisiwe kuMfanekiso 4. Ngexesha lenkqubo ye-epitaxial, amasuntswana angaphandle, iziphene ze-substrate, umonakalo wobuso, kunye nokuphambuka kwenkqubo ye-epitaxial konke kunokuchaphazela indlela yokukhula kokuhamba kwenyathelo lendawo, okubangela iziphene zemo yobuso.
Itheyibhile 1. Izizathu zokwakheka kweziphene eziqhelekileyo ze-matrix kunye neziphene ze-surface morphology kwiileya ze-SiC epitaxial
Iziphene zamanqaku
Iziphene zeendawo zenzeka ngenxa yezithuba okanye izithuba kwindawo enye ye-lattice okanye kwiindawo ezininzi ze-lattice, kwaye azinazo iindawo ezandisiweyo. Iziphene zeendawo zinokwenzeka kuyo yonke inkqubo yokuvelisa, ingakumbi ekufakweni kwe-ion. Nangona kunjalo, kunzima ukuzibona, kwaye ubudlelwane phakathi kokuguqulwa kweziphene zeendawo kunye nezinye iziphene buyinkimbinkimbi kakhulu.
IiMicropipes (MP)
IiMicropipes zii-hollow screw dislocations ezisasazeka kwi-growth axis, nge-Burgers vector <0001>. Ububanzi bee-microtubes buqala kwi-micron ukuya kwi-ten microns. IiMicrotubes zibonisa iimpawu ezinkulu ezifana nomphezulu kumphezulu wee-SiC wafers. Ngokwesiqhelo, uxinano lwee-microtubes lumalunga ne-0.1 ~ 1cm-2 kwaye luyaqhubeka nokwehla ekujongeni umgangatho wemveliso yee-wafer zorhwebo.
Ukukhuhlana kwezikrufu (TSD) kunye nokukhuhlana komphetho (TED)
Ukudilika kwiSiC yeyona nto iphambili ekudilikeni nasekungasebenzini kwesixhobo. Zombini ii-screw dislocations (TSD) kunye nee-edge dislocations (TED) zihamba ecaleni kwe-growth axis, kunye nee-Burgers vectors ze-<0001> kunye ne-1/3<11–20>, ngokwahlukeneyo.
Zombini ii-screw dislocations (TSD) kunye nee-edge dislocations (TED) zinokusuka kwi-substrate ziye kumphezulu we-wafer kwaye zizise iimpawu zomphezulu omncinci ofana ne-pit (Umfanekiso 4b). Ngokwesiqhelo, ubuninzi bee-edge dislocations bumalunga ne-10 ngaphezu kwee-screw dislocations. Ii-screw dislocations ezandisiweyo, oko kukuthi, ezisuka kwi-substrate ukuya kwi-epilayer, zinokuguquka zibe zezinye iziphene kwaye zisasazeke kwi-growth axis. Ngexesha le-growth axis, i-edge dislocations inokuba yi-exile dependency.I-SiC epitaxialukukhula, ukusasazeka kwezikrufu kuguqulwa kube ziimpazamo zokubeka (SF) okanye iziphene zekaroti, ngelixa ukusasazeka kwemiphetho kwii-epilayers kuboniswa ukuba kuguqulwa ukusuka kwi-basal plane dislocations (BPDs) ezizuzwe kwi-substrate ngexesha lokukhula kwe-epitaxial.
Ukususwa kwendiza okusisiseko (BPD)
Ifumaneka kwi-SiC basal plane, ene-Burgers vector ye-1/3 <11–20>. Ii-BPD azifane zivele kumphezulu wee-SiC wafers. Zihlala zigxile kwi-substrate enobunzima obuyi-1500 cm-2, ngelixa ubunzima bazo kwi-epilayer bumalunga ne-10 cm-2 kuphela. Ukufunyanwa kwee-BPDs kusetyenziswa i-photoluminescence (PL) kubonisa iimpawu ezithe ngqo, njengoko kubonisiwe kuMfanekiso 4c. NgexeshaI-SiC epitaxialukukhula, ii-BPD ezandisiweyo zinokuguqulwa zibe ziimpazamo ze-stacking (SF) okanye i-edge dislocations (TED).
Iziphene zokubeka izinto ngokwee-stacking (SFs)
Iziphene kulandelelwano lokuqokelelana kwe-SiC basal plane. Iziphene zokuqokelelana zingabonakala kumaleko we-epitaxial ngokufumana ii-SF kwi-substrate, okanye zinxulunyaniswe nokwandiswa kunye nokuguqulwa kwe-basal plane dislocations (BPDs) kunye ne-threading screw dislocations (TSDs). Ngokubanzi, uxinano lwee-SF lungaphantsi kwe-1 cm-2, kwaye zibonisa uphawu oluyinxantathu xa lufunyenwe kusetyenziswa i-PL, njengoko kubonisiwe kuMfanekiso 4e. Nangona kunjalo, iintlobo ezahlukeneyo zeziphene zokuqokelelana zinokwenziwa kwi-SiC, njengohlobo lweShockley kunye nohlobo lweFrank, kuba nokuba kukho ukuphazamiseka kwamandla okuqokelelana phakathi kweenqwelo-moya kunokukhokelela ekungahambelani okukhulu kulandelelwano lokuqokelelana.
Ukuwa
Isiphene sokuwa sivela ikakhulu ekuweni kwamasuntswana eludongeni oluphezulu nolusecaleni lwegumbi lokusabela ngexesha lenkqubo yokukhula, enokwenziwa ngcono ngokuphucula inkqubo yokugcinwa rhoqo kwezinto ezisetyenziswayo zegrafiti yegumbi lokusabela.
Isiphene esinxantathu
Yi-3C-SiC polytype input efikelela kumphezulu we-SiC epilayer kwicala le-basal plane, njengoko kubonisiwe kuMfanekiso 4g. Ingaveliswa zii-particles eziwela kumphezulu we-SiC epilayer ngexesha lokukhula kwe-epitaxial. Ii-particles zifakwa kwi-epilayer kwaye ziphazamisane nenkqubo yokukhula, nto leyo ebangela i-3C-SiC polytype inclusions, ebonisa iimpawu zomphezulu we-triangular ezibukhali kunye nee-particles ezikwi-vertices yommandla we-triangular. Izifundo ezininzi zikwathi imvelaphi ye-polytype inclusions yi-surface krwelo, ii-micropipes, kunye neeparameters ezingafanelekanga zenkqubo yokukhula.
Isiphene sekherothi
I-carrot defect yi-stacking fault complex eneziphelo ezimbini ezikwi-TSD kunye ne-SF basal crystal planes, epheliswa yi-Frank-type dislocation, kwaye ubungakanani be-carrot defect bunxulumene ne-prismatic stacking fault. Ukudibana kwezi mpawu kwenza i-surface morphology ye-carrot defect, ebonakala ngathi yi-carrot shape enobunzima obungaphantsi kwe-1 cm-2, njengoko kubonisiwe kuMfanekiso 4f. I-carrot defects yenzeka lula xa kupholishwa imikrwelo, ii-TSD, okanye ii-substrate defects.
Imikrwelo
Imikrwelo yimikrwelo yoomatshini kumphezulu wee-wafers zeSiC ezenziwe ngexesha lenkqubo yokuvelisa, njengoko kubonisiwe kuMfanekiso 4h. Imikrwelo kwi-substrate yeSiC inokuphazamisa ukukhula kwe-epilayer, ivelise umqolo wokuqhekeka okuphezulu ngaphakathi kwe-epilayer, okanye imikrwelo ingaba sisiseko sokwakheka kweziphene zekaroti. Ke ngoko, kubalulekile ukupolisha kakuhle ii-wafers zeSiC kuba le mikrwelo inokuba nefuthe elikhulu ekusebenzeni kwesixhobo xa sibonakala kwindawo esebenzayo yesixhobo.
Ezinye iziphene zemo yomphezulu
I-Step bunching sisiphene somphezulu esenzeka ngexesha lenkqubo yokukhula kwe-SiC epitaxial, evelisa oonxantathu abatyhidiweyo okanye iimpawu ze-trapezoidal kumphezulu we-SiC epilayer. Kukho ezinye iziphene ezininzi zomphezulu, ezifana nemingxunya yomphezulu, amaqhuma kunye namabala. Ezi ziphene zihlala zibangelwa ziinkqubo zokukhula ezingalungiswanga kakuhle kunye nokususwa ngokupheleleyo komonakalo wokupholisha, okuchaphazela kakubi ukusebenza kwesixhobo.
Ixesha leposi: Juni-05-2024