Ikoranabuhanga ry'ingenzi mu iterambere ryaSiC epitaxialIbikoresho ni ikoranabuhanga ryo kugenzura inenge, cyane cyane ikoranabuhanga ryo kugenzura inenge rishobora kwangirika cyangwa kwangirika kw'uburyo ibintu byizewe. Inyigo y'uburyo inenge za substrate zigenda zijya mu gice cya epitaxial mu gihe cy'iterambere rya epitaxial, amategeko yo kwimura no guhindura inenge ku murongo uri hagati ya substrate na epitaxial layer, hamwe n'uburyo inenge zishyirwa mu gice cya nucleation ni byo shingiro ryo gusobanura isano iri hagati y'inenge za substrate n'inenge za epitaxial, bishobora kuyobora neza gusuzuma substrate no kunoza imikorere ya epitaxial.
Inenge zaibice bya epitaxial bya silikoni karubideBigabanyijemo ibice bibiri: inenge za kristu n'inenge z'imiterere y'ubuso. Inenge za kristu, harimo inenge z'ingingo, kwimuka kw'utuzuru, inenge za microtubule, kwimuka kw'inkombe, nibindi, ahanini bituruka ku nenge ziri kuri substrates za SiC kandi zigakwirakwira mu cyiciro cya epitaxial. Inenge z'imiterere y'ubuso zishobora kubonwa mu buryo butaziguye hakoreshejwe mikorosikopi kandi zifite imiterere isanzwe y'imiterere. Inenge z'imiterere y'ubuso zirimo ahanini: Gushwanyaguza, Inenge y'impande eshatu, Inenge ya karoti, Kugwa, na Particle, nk'uko bigaragara ku Ishusho ya 4. Mu gihe cy'imikorere ya epitaxial, uduce tw'amahanga, inenge za substrate, kwangirika k'ubuso, no kunyuranya kw'imikorere ya epitaxial byose bishobora kugira ingaruka ku buryo bwo gukura kw'intambwe mu gace, bigatera inenge z'imiterere y'ubuso.
Imbonerahamwe ya 1. Impamvu zitera kugaragara kw'ibisesenguzi bisanzwe bya matrix n'ibisesenguzi by'imiterere y'ubuso mu bice bya SiC epitaxial layers
Inenge z'ingingo
Ubusembwa bw'ingingo buterwa n'icyuho cyangwa icyuho kiri ku gice kimwe cyangwa ahantu henshi hanini, kandi nta hantu na hamwe bigira. Ubusembwa bw'ingingo bushobora kubaho muri buri gikorwa, cyane cyane mu gutera iyoni. Ariko, biragoye kubibona, kandi isano iri hagati y'ihinduka ry'ubusembwa bw'ingingo n'izindi nenge nayo iragoye cyane.
Imiyoboro mito (MP)
Imiyoboro mito ni imiyoboro y’amazi ikwirakwira ku murongo w’ikura, hamwe na vekteri ya Burgers <0001>. Umurambararo wa miyoboro mito uri hagati ya mikoroni imwe na mikoroni icumi. Imiyoboro mito igaragaza imiterere minini isa n’aho iboshye ku buso bwa wafer za SiC. Ubusanzwe, ubucucike bwa mikorobu ni hagati ya 0.1 na 1cm-2 kandi bukomeza kugabanuka mu kugenzura ubuziranenge bw’umusaruro wa wafer mu bucuruzi.
Gucika kw'imitsi (TSD) n'igabanuka ry'imitsi (TED)
Gucikagurika muri SiC ni yo soko nyamukuru itera kwangirika no gucika intege kw'ibikoresho. Gucikagurika kw'ibyuma (TSD) na guterwa n'inkombe (TED) byombi binyura ku murongo w'ikura, hamwe na vekteri za Burgers za <0001> na 1/3<11–20>, uko bikurikirana.
Gucika kw'imigozi (TSD) no gucika kw'imigozi (TED) byombi bishobora kuva kuri substrate kugera ku buso bwa wafer kandi bikazana imiterere mito isa n'aho ari (Ishusho ya 4b). Ubusanzwe, ubucucike bw'imigozi bungana n'inshuro 10 z'imigozi. Gucika kw'imigozi, ni ukuvuga kuva kuri substrate kugera ku gice cyo hejuru, bishobora no guhindukamo izindi nenge no gukwirakwira ku murongo w'ikura. Mu gihe cy'ikura, imiterere y'imigozi ihinduka.SiC epitaxialgukura, kwimuka kw'ibice by'inyuma bihindurwamo amakosa yo gupfunyika (SF) cyangwa inenge za karoti, mu gihe kwimuka kw'inyuma mu bice by'inyuma byerekana ko byahinduwe bivuye ku kwimuka kw'inyuma (BPDs) byakomotse ku gice cy'inyuma mu gihe cyo gukura kwa epitaxial.
Guhinduka kw'indege by'ibanze (BPD)
Iherereye ku gice cy’ibanze cya SiC, ifite vekteri ya Burgers ya 1/3 <11–20>. BPDs ntizikunze kugaragara ku buso bwa wafers za SiC. Akenshi ziba zibanda ku gice cy’imbere gifite ubucucike bwa cm 1500-2, mu gihe ubucucike bwazo mu gice cy’imbere ari cm 10-2 gusa. Gupima BPDs hakoreshejwe photoluminescence (PL) bigaragaza imiterere y’umurongo, nk’uko bigaragara ku Ishusho ya 4c. Mu giheSiC epitaxialgukura, BPD zagutse zishobora guhindurwamo gufunga ibice (SF) cyangwa gutembagara mu mpande (TED).
Ibibazo byo gukusanya amakuru (SFs)
Inenge mu ruhererekane rw'ibice by'umugozi wa SiC. Inenge mu ruhererekane zishobora kugaragara mu gice cya epitaxial bitewe no gukuramo SF mu gice cy'umugozi, cyangwa zikaba zifitanye isano no kwaguka no guhinduka kwa dislocations za basal plane (BPDs) na threading screw dislocations (TSDs). Muri rusange, ubucucike bwa SFs buri munsi ya cm 1-2, kandi zigaragaza imiterere ya mpandeshatu iyo zibonetse hakoreshejwe PL, nk'uko bigaragara ku Ishusho ya 4e. Ariko, ubwoko butandukanye bw'inenge mu ruhererekane bushobora kubaho muri SiC, nka Shockley type na Frank type, kuko n'ingufu nke mu ruhererekane rw'ibice by'umugozi hagati y'ibice bishobora gutuma habaho ikosa rikomeye mu ruhererekane rw'ibice by'umugozi.
Kugwa
Ikosa ryo kugwa rituruka ahanini ku kugabanuka kw'uduce ku nkuta zo hejuru no ku mpande z'icyumba cy'inyigo mu gihe cyo gukura, ibyo bikaba bishobora kunozwa binyuze mu kunoza uburyo bwo kubungabunga ibikoresho bya grafiti byo mu cyumba cy'inyigo buri gihe.
Inenge y'impandeshatu
Ni imiterere ya 3C-SiC polytype igera ku buso bwa SiC epilayer mu cyerekezo cy'ibanze, nk'uko bigaragara ku Ishusho ya 4g. Ishobora guterwa n'uduce tugwa ku buso bwa SiC epilayer mu gihe cyo gukura kwa epitaxial. Uduce twinjizwa muri epilayer kandi tubangamira inzira yo gukura, bigatuma habaho imiterere ya 3C-SiC polytype, igaragaza imiterere y'ubuso bwa mpandeshatu bufite imiterere ityaye hamwe n'uduce turi ku mpande z'agace ka mpandeshatu. Ubushakashatsi bwinshi bwagaragaje kandi ko inkomoko y'imiterere ya politype iterwa no gushwanyagurika k'ubuso, imiyoboro mito, n'ibipimo bidakwiye by'inzira yo gukura.
Ubusembwa bwa karoti
Ikosa rya karoti ni ubwoko bw'ikosa ryo gukusanya hamwe n'impande ebyiri ziherereye ku miterere ya TSD na SF basal crystal, rigasozwa no kwitandukanya kwa Frank-type, kandi ingano y'ikosa rya karoti ifitanye isano n'ikosa rya prismatic stacking. Uruvange rw'ibi bintu rugize imiterere y'ubuso bw'ikosa rya karoti, risa n'ishusho ya karoti ifite ubucucike buri munsi ya cm 1-2, nk'uko bigaragara ku Ishusho ya 4f. Ikosa rya karoti riboneka byoroshye mu gihe cyo gukosora ibara, TSD, cyangwa inenge za substrate.
Imikufi
Imikufi ni ibyangiritse ku buso bwa SiC wafers zakozwe mu gihe cyo gukora, nk'uko bigaragara ku Ishusho ya 4h. Imikufi ku gice cya SiC ishobora kubangamira gukura kwa epilayer, igatera umurongo w'imikufi myinshi mu gice cya epilayer, cyangwa imikufi ishobora kuba ishingiro ryo kurema inenge za karoti. Kubwibyo, ni ngombwa gukosora neza SiC wafers kuko iyi mikufi ishobora kugira ingaruka zikomeye ku mikorere y'igikoresho iyo igaragara mu gice gikora cy'igikoresho.
Izindi nenge z'imiterere y'ubuso
Intambwe zo gukurura ni inenge yo ku buso ibaho mu gihe cy'ikura rya SiC epitaxial, ritanga imiterere y'impandeshatu cyangwa imiterere ya trapezoidal ku buso bwa SiC epilayer. Hariho n'izindi nenge nyinshi zo ku buso, nk'ibice byo hejuru, uduce duto n'ibizinga. Izi nenge akenshi ziterwa n'uburyo bwo gukura budatunganyijwe neza no gukuraho burundu ibyangiritse byo gusiga, ibyo bikaba bigira ingaruka mbi ku mikorere y'igikoresho.
Igihe cyo kohereza: Kamena-05-2024