ʻO ka uhi ʻana o SiC / i uhi ʻia o ka substrate Graphite no Semiconductor,Nā Pā GraphiteʻO SicNā mea hoʻopaʻa epitaxy graphite,
Hoʻolako ke kalapona i nā mea hoʻopaʻa, Nā mea hoʻopaʻa epitaxy graphite, Nā mea hoʻopaʻa Graphite, Nā Pā Graphite, ʻO ka Epitaxy SiC,
Nā mea lawe Graphite i uhi ʻia me SiC

Mālama mākou i nā hoʻomanawanui kokoke loa i ka wā e hoʻopili ai i ka uhi SiC, me ka hoʻohana ʻana i ka mīkini kikoʻī kiʻekiʻe e hōʻoia i kahi ʻano susceptor like. Hana pū mākou i nā mea me nā waiwai kū'ē uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana i hoʻomehana ʻia me ka inductive. Hele mai nā ʻāpana i hoʻopau ʻia me kahi palapala hōʻoia no ka maʻemaʻe a me ka dimensional.

Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma ke ʻano CVD ma luna o ka ʻili o ka graphite, nā keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC. Hoʻopaʻa paʻa ʻia ka SIC i hoʻokumu ʻia i ke kumu graphite, e hāʻawi ana i ke kumu graphite i nā waiwai kūikawā, no laila e hana ana i ka ʻili o ka graphite i paʻa, ʻaʻohe Porosity, kū'ē i ke ana wela kiʻekiʻe, kū'ē i ka corrosion a me ke kū'ē i ka oxidation.

Hāʻawi ke kaʻina hana CVD i ka maʻemaʻe kiʻekiʻe loa a me ka nui o ka manaʻo o ka uhi SiC me ka ʻole o ka porosity. Eia kekahi, ʻoiai he paʻakikī loa ka silicon carbide, hiki ke hoʻopili ʻia i kahi ʻili e like me ke aniani. Hāʻawi ka uhi ʻana o CVD silicon carbide (SiC) i kekahi mau pono e pili ana i ka ʻili maʻemaʻe loa a me ka lōʻihi o ka ʻaʻahu ʻana. ʻOiai he hana maikaʻi loa nā huahana i uhi ʻia i ke kūlana vacuum kiʻekiʻe a me ke kiʻekiʻe o ka mahana, kūpono lākou no nā noi ma ka ʻoihana semiconductor a me nā wahi ʻē aʻe. Hāʻawi pū mākou i nā huahana pyrolytic graphite (PG).

Nā hiʻohiʻona nui:

1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe:

He maikaʻi loa nō ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.

3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.

4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.

Nā kikoʻī nui o nā uhi CVD-SIC:

Hoʻohana: Ua hoʻopili ʻia ka uhi ʻana o ka CVD silicon carbide i nā ʻoihana semiconductor, e like me ka MOCVD tray, RTP a me ke keʻena etching oxide no ka mea he kūpaʻa maikaʻi loa ka silicon nitride i ka haʻalulu wela a hiki ke kū i ka plasma ikehu kiʻekiʻe.
-Hoʻohana nui ʻia ka silicon carbide i ka semiconductor a me ka uhi ʻana.

Ka hiki ke hoʻolako:

10000 ʻāpana/ʻāpana i kēlā me kēia mahina
Hoʻopili a me ka lawe ʻana:
Hoʻopili ʻana: Hoʻopili maʻamau a ikaika
ʻEke Poly + Pahu + Carton + Pallet
Awa:
Ningbo/Shenzhen/Shanghai
Ka manawa o waena o ka hoʻomaka a i ka wā pau:

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