Mea Hana Kina SiC Coated Graphite MOCVD Epitaxy Susceptor

Wehewehe Pōkole:

Maʻemaʻe < 5ppm
‣ ʻO ke ʻano like o ka doping maikaʻi
‣ Kiʻekiʻe ka nui a me ka hoʻopili ʻana
‣ Kū'ē maikaʻi i ka corrosion a me ke kalapona

‣ Hoʻopilikino ʻoihana
‣ Manawa alakaʻi pōkole
‣ Lako paʻa
‣ Ka hoʻomalu ʻana i ka maikaʻi a me ka hoʻomaikaʻi mau ʻana

ʻO ka Epitaxy o GaN ma Sapphire(RGB/Mini/Micro LED);
ʻO ka epitaxy o GaN ma Si Substrate(UVC);
ʻO ka epitaxy o GaN ma Si Substrate(Mea Hana Uila);
ʻO ka epitaxy o Si ma luna o Si Substrate(Kaapuni hoʻohui ʻia);
ʻO ka epitaxy o SiC ma ka SiC Substrate(Papa Hoʻoheheʻe);
ʻO ka epitaxy o InP ma InP

E leka uila mai iā mākou Hoʻoiho ma ke ʻano he PDF

Nā kikoʻī huahana

Nā Lepili Huahana

ʻO ke kūʻai ʻana o ka MOCVD Susceptor kiʻekiʻe ma ka pūnaewele ma Kina

Pono kahi wafer e hala i kekahi mau ʻanuʻu ma mua o ka mākaukau ʻana no ka hoʻohana ʻana i nā mea uila. ʻO kahi kaʻina hana koʻikoʻi ʻo ia ka silicon epitaxy, kahi e lawe ʻia ai nā wafers ma luna o nā susceptors graphite. ʻO nā waiwai a me ke ʻano o nā susceptors he hopena koʻikoʻi i ka maikaʻi o ka papa epitaxial o ka wafer.

No nā pae hoʻokomo ʻili lahilahi e like me ka epitaxy a i ʻole MOCVD, hāʻawi ʻo VET i nā lako graphite ultra-pure i hoʻohana ʻia e kākoʻo i nā substrates a i ʻole "wafers". Ma ke kumu o ke kaʻina hana, ua hoʻokomo mua ʻia kēia lako, nā susceptors epitaxy a i ʻole nā kahua ukali no ka MOCVD, i ke kaiapuni hoʻokomo:

● Wela kiʻekiʻe.
● Ka hoʻomaʻemaʻe kiʻekiʻe.
● Ka hoʻohana ʻana i nā mea hoʻomaka kinoea ikaika.
● ʻAʻohe haumia, ʻaʻohe ʻili ʻana.
● Ke kū'ē ʻana i nā waikawa ikaika i ka wā o nā hana hoʻomaʻemaʻe

ʻO VET Energy ka mea hana maoli o nā huahana graphite a me silicon carbide i hana ʻia me ka uhi no ka semiconductor a me ka ʻoihana photovoltaic. Loaʻa kā mākou hui loea mai nā ʻoihana noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā hoʻonā mea ʻoihana hou aku nāu.

Ke hoʻomau nei mākou i ka hoʻomohala ʻana i nā kaʻina hana holomua e hoʻolako i nā mea holomua hou aʻe, a ua hana i kahi ʻenehana i hoʻopaʻa ʻia, hiki ke hoʻopaʻa i ka pilina ma waena o ka uhi a me ka substrate a emi iki ka maʻalahi o ka hemo ʻana.

Nā hiʻohiʻona o kā mākou huahana:

1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe a hiki i ka 1700 ℃.
2. Maʻemaʻe kiʻekiʻe a me ke kūlike wela
3. Kū'ē maika'i loa i ka pala: waikawa, alkali, pa'akai a me nā mea hana olaola.
4. Paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola lawelawe a ʻoi aku ka paʻa

CVD SiC Nā waiwai kino kumu o CVD SiCuhi ʻana
Waiwai	Waiwai Maʻamau
ʻAno Crystal	ʻO ka polycrystalline pae FCC β, ʻo ke kuhikuhi nui (111)
Ka nui o ka paʻa	3.21 g/cm³
Paʻakikī	2500 paʻakikī Vickers (500g ukana)
Ka nui o ka palaoa	2~10μm
Maʻemaʻe Kemika	99.99995%
Ka Mana Wela	640 J·kg^-1·K^-1
Mahana Sublimation	2700℃
Ikaika Flexural	415 MPa RT 4-kiko
Modulus o Young	430 Gpa 4pt kūlou, 1300 ℃
Ka Hoʻokele Wela	300W·m^-1·K^-1
Hoʻonui Wela (CTE)	4.5×10^-6K^-1