Nsogbu teknụzụ dị na wafer silicon carbide dị elu nke na-emepụta oke ibu nke ọma ma nwee arụmọrụ kwụsiri ike gụnyere:
1) Ebe ọ bụ na kristal kwesịrị itolite n'ebe okpomọkụ dị elu karịa 2000°C, ihe achọrọ maka njikwa okpomọkụ dị oke elu;
2) Ebe ọ bụ na silicon carbide nwere ihe karịrị usoro kristal 200, mana naanị usoro ole na ole nke otu kristal silicon carbide bụ ihe ndị semiconductor achọrọ, a ga-achịkwa oke silicon-to-carbon, ogo okpomọkụ uto, na uto kristal nke ọma n'oge usoro uto kristal. Paramita dịka ọsọ na nrụgide ikuku;
3) N'okpuru usoro nnyefe nke usoro uzuoku, teknụzụ mgbasa nke dayameta nke uto kristal silicon carbide siri ike nke ukwuu;
4) Ike siri ike nke silicon carbide dị nso na nke dayamọnd, usoro ịkpụ, ịkpụcha, na ịchacha ihe siri ike.
Wafers epitaxial SiC: a na-ejikarị usoro kemịkalụ vapor deposition (CVD) emepụta ya. Dịka ụdị doping dị iche iche si dị, a na-ekewa ha n'ụdị n-ụdị na wafers epitaxial ụdị p. Hantian Tiancheng na Dongguan Tianyu nwere ike inye wafers epitaxial SiC nke dị sentimita 4/6. Maka SiC epitaxy, ọ na-esiri ike ijikwa n'ọhịa voltaji dị elu, ịdị mma nke SiC epitaxy nwekwara mmetụta ka ukwuu na ngwaọrụ SiC. Ọzọkwa, ụlọ ọrụ anọ kachasị elu na ụlọ ọrụ ahụ na-achịkwa akụrụngwa epitaxial: Axitron, LPE, TEL na Nuflare.
Akụkụ epitaxial nke silicon carbideWafer na-ezo aka na wafer silicon carbide nke a na-akụ otu ihe nkiri kristal (epitaxial layer) nwere ihe ụfọdụ achọrọ yana otu kristal substrate na silicon carbide substrate mbụ. Uto Epitaxial na-eji ngwa CVD (Chemical Vapor Deposition, ) ma ọ bụ ngwa MBE (Molecular Beam Epitaxy). Ebe ọ bụ na a na-emepụta ngwaọrụ silicon carbide ozugbo na oyi akwa epitaxial, ịdị mma nke oyi akwa epitaxial na-emetụta arụmọrụ na mmepụta nke ngwaọrụ ahụ ozugbo. Ka arụmọrụ iguzogide voltaji nke ngwaọrụ ahụ na-aga n'ihu na-abawanye, ọkpụrụkpụ nke oyi akwa epitaxial kwekọrọ na-aghọ ibu ma njikwa ahụ na-esikwu ike. N'ozuzu, mgbe voltaji dị ihe dị ka 600V, ọkpụrụkpụ oyi akwa epitaxial achọrọ dị ihe dị ka microns 6; mgbe voltaji dị n'etiti 1200-1700V, ọkpụrụkpụ oyi akwa epitaxial achọrọ ruru microns 10-15. Ọ bụrụ na voltaji ahụ erute ihe karịrị volts 10,000, enwere ike ịchọ ọkpụrụkpụ oyi akwa epitaxial nke karịrị microns 100. Ka ọkpụrụkpụ nke oyi akwa epitaxial na-aga n'ihu na-abawanye, ọ na-esiwanye ike ijikwa ọkpụrụkpụ na nguzozi nha na njupụta ntụpọ.
Ngwaọrụ SiC: N'ụwa niile, 600~1700V SiC SBD na MOSFET abụrụla ndị e mepụtara n'ụlọ ọrụ mmepụta ihe. Ngwaahịa ndị a na-ejikarị arụ ọrụ na ọkwa voltaji dị n'okpuru 1200V ma na-anabata TO packaging. N'ihe gbasara ọnụahịa, a na-ere ngwaahịa SiC n'ahịa mba ụwa ihe dị ka ugboro 5-6 karịa ndị ibe ha Si. Agbanyeghị, ọnụahịa na-ebelata na ọnụego kwa afọ nke 10%. Ka mmụba nke ihe ndị dị n'elu na mmepụta ngwaọrụ na-abawanye n'ime afọ 2-3 sochirinụ, ọkọnọ ahịa ga-abawanye, nke na-eduga na mbelata ọnụahịa ọzọ. A na-atụ anya na mgbe ọnụahịa ahụ ruru ugboro 2-3 nke ngwaahịa Si, uru ndị sitere na mbelata ọnụ ahịa sistemụ na arụmọrụ ka mma ga-eme ka SiC ji nwayọọ nwayọọ biri n'ahịa ngwaọrụ Si.
Nkwakọ ngwaahịa ọdịnala dabere na ihe ndị e ji silicon mee, ebe ihe ndị e ji semiconductor nke ọgbọ nke atọ chọọ imewe ọhụrụ kpamkpam. Iji usoro nkwakọ ngwaahịa ọdịnala dabere na silicon maka ngwaọrụ ike bandgap sara mbara nwere ike iweta nsogbu na ihe ịma aka ọhụrụ metụtara ugboro ugboro, njikwa okpomọkụ, na ntụkwasị obi. Ngwaọrụ ike SiC na-enwe mmetụta karịa na ikike parasitic na inductance. Ma e jiri ya tụnyere ngwaọrụ Si, chips ike SiC nwere ọsọ mgbanwe ngwa ngwa, nke nwere ike ibute oke ibu, oscillation, mmụba nke mfu mgbanwe, na ọbụna nsogbu ngwaọrụ. Na mgbakwunye, ngwaọrụ ike SiC na-arụ ọrụ na okpomọkụ dị elu, na-achọ usoro njikwa okpomọkụ dị elu karịa.
E mepụtala ọtụtụ ihe owuwu dị iche iche n'ọhịa nke nkwakọ ngwaahịa ike semiconductor sara mbara. Nkwakọ ngwaahịa modulu ike dabere na Si ọdịnala adabaghịzi. Iji dozie nsogbu nke paramita parasitic dị elu na arụmọrụ okpomọkụ na-adịghị mma nke nkwakọ ngwaahịa modulu ike dabere na Si ọdịnala, nkwakọ ngwaahịa modulu ike SiC na-anabata njikọ ikuku na teknụzụ oyi akụkụ abụọ n'ime nhazi ya, ma na-anabatakwa ihe ndị dị n'okpuru ya na njikwa okpomọkụ ka mma, ma gbalịa itinye capacitors decoupling, sensọ okpomọkụ/ugbu a, na sekit draịva n'ime nhazi modulu, ma mepụta ọtụtụ teknụzụ nkwakọ ngwaahịa modulu dị iche iche. Ọzọkwa, enwere nnukwu ihe mgbochi teknụzụ na nrụpụta ngwaọrụ SiC na ọnụ ahịa mmepụta dị elu.
A na-emepụta ngwaọrụ silicon carbide site na itinye akwa epitaxial na silicon carbide substrate site na CVD. Usoro a gụnyere nhicha, oxidation, photolithography, etching, iwepụ photoresist, ion implantation, ion vapor deposition nke silicon nitride, polishing, sputtering, na usoro nhazi ndị ọzọ iji mepụta nhazi ngwaọrụ na SiC single crystal substrate. Ụdị ngwaọrụ ike SiC bụ isi gụnyere SiC diodes, SiC transistors, na SiC power modules. N'ihi ihe ndị dị ka ọsọ mmepụta ihe dị nwayọ na obere ọnụego mmepụta, ngwaọrụ silicon carbide nwere ọnụ ahịa nrụpụta dị elu.
Na mgbakwunye, imepụta ngwaọrụ silicon carbide nwere ụfọdụ nsogbu teknụzụ:
1) Ọ dị mkpa ịmepụta usoro pụrụ iche nke kwekọrọ na njirimara nke ihe silicon carbide. Dịka ọmụmaatụ: SiC nwere ebe agbaze dị elu, nke na-eme ka mgbasa okpomọkụ ọdịnala ghara ịdị irè. Ọ dị mkpa iji usoro ntinye ion na njikwa paramita nke ọma dịka okpomọkụ, ọnụego ọkụ, oge, na mmiri gas; SiC anaghị abanye na ihe mgbaze kemịkalụ. A ga-eji usoro dị ka etching kpọrọ nkụ, a ga-ejikwa ihe mkpuchi ihu, ngwakọta gas, njikwa mkpọda akụkụ, ọnụego etching, iru ala akụkụ, wdg. mee ka ọ dị mma ma mepụta ya;
2) Mmepụta elektrọd ígwè na wafers silicon carbide chọrọ iguzogide kọntaktị n'okpuru 10-5Ω2. Ihe elektrọd ndị na-emezu ihe achọrọ, Ni na Al, enweghị nkwụsi ike okpomọkụ dị elu karịa 100°C, mana Al/Ni nwere nkwụsi ike okpomọkụ ka mma. Nguzogide kọntaktị kpọmkwem nke ihe electrode mejupụtara /W/Au dị elu karịa 10-3Ω2;
3) SiC nwere oke ịkpụcha ihe, ike nke SiC na-esote naanị dayamọnd, nke na-ebute ihe achọrọ dị elu maka ịkpụ, ịkpụcha ihe, ịkpụcha ihe na teknụzụ ndị ọzọ.
Ọzọkwa, ngwaọrụ ike trench silicon carbide siri ike imepụta. Dịka usoro ngwaọrụ dị iche iche si dị, enwere ike kewaa ngwaọrụ ike silicon carbide n'ime ngwaọrụ planar na ngwaọrụ trench. Ngwaọrụ ike silicon carbide planar nwere nguzozi unit dị mma na usoro nrụpụta dị mfe, mana ha na-enwekarị mmetụta JFET ma nwee nnukwu ikike parasitic na nguzogide on-state. Ma e jiri ya tụnyere ngwaọrụ planar, ngwaọrụ ike silicon carbide trench nwere nguzozi unit dị ala ma nwee usoro nrụpụta dị mgbagwoju anya karị. Agbanyeghị, nhazi trench na-enyere aka ịbawanye njupụta nke ngwaọrụ ma ọ naghị enwe ike imepụta mmetụta JFET, nke bara uru n'ịdozi nsogbu nke ngagharị ọwa. O nwere ihe onwunwe dị mma dịka obere nguzogide on-resistance, obere ikike parasitic, na obere oriri ike mgbanwe. O nwere uru dị ukwuu na arụmọrụ ma aghọọla isi ihe nke mmepe nke ngwaọrụ ike silicon carbide. Dịka ebe nrụọrụ weebụ Rohm si kwuo, nhazi ROHM Gen3 (usoro Gen1 Trench) bụ naanị 75% nke mpaghara mgbawa Gen2 (Plannar2), ebe iguzogide ROHM Gen3 nke usoro ya na-ebelata site na 50% n'okpuru otu nha mgbawa ahụ.
Ihe mejupụtara silicon carbide, epitaxy, front-end, R&D na ndị ọzọ bụ pasent 47, 23, 19, 6% na 5% nke ọnụ ahịa nrụpụta nke ngwaọrụ silicon carbide n'otu n'otu.
N'ikpeazụ, anyị ga-elekwasị anya n'ịkwatu ihe mgbochi teknụzụ nke ihe ndị dị n'ime ụlọ ọrụ silicon carbide.
Usoro mmepụta nke ihe mkpuchi silicon carbide yiri nke ihe mkpuchi silicon, mana ọ siri ike karịa.
Usoro mmepụta nke silicon carbide substrate na-agụnyekarị mmepụta ihe eji emepụta ihe, uto kristal, nhazi ingot, ịkpụ ingot, ịkpụ wafer grinding, polishing, nhicha na njikọ ndị ọzọ.
Ọkwa uto kristal bụ isi ihe dị na usoro ahụ dum, usoro a na-ekpebikwa ihe ndị metụtara eletriki nke ihe mkpuchi silicon carbide.
Ihe ndị e ji silicon carbide mee siri ike itolite n'oge mmiri mmiri n'okpuru ọnọdụ nkịtị. Usoro uto nke uzuoku a ma ama n'ahịa taa nwere okpomọkụ uto karịa 2300°C ma chọọ njikwa nke ọma nke okpomọkụ uto. Usoro ọrụ dum siri ike ịhụ. Njehie ntakịrị ga-eduga na mkpochapụ ngwaahịa. Ma e jiri ya tụnyere ya, ihe ndị e ji silicon mee chọrọ naanị 1600℃, nke dị obere karịa. Ịkwadebe ihe ndị e ji silicon carbide mee na-echekwa nsogbu dị ka uto kristal dị nwayọ na mkpa dị elu nke ụdị kristal. Ịtọ silinda carbide wafer na-ewe ihe dị ka ụbọchị 7 ruo 10, ebe ịdọpụta mkpanaka silicon na-ewe naanị ụbọchị 2 na ọkara. Ọzọkwa, silicon carbide bụ ihe nke siri ike ya bụ nke abụọ karịa dayamọnd. Ọ ga-efunahụ ọtụtụ ihe n'oge ịkpụ, ịkpụ, na ịchacha, oke mmepụta ya bụkwa naanị 60%.
Anyị maara na usoro a bụ ịbawanye nha nke ihe ndị e ji silicon carbide mee, ka nha ya na-aga n'ihu na-abawanye, ihe achọrọ maka teknụzụ mgbasa dayameta na-abawanye elu. Ọ chọrọ ngwakọta nke ihe njikwa teknụzụ dị iche iche iji nweta uto ugboro ugboro nke kristal.
Oge ozi: Mee-22-2024