CVDmkpuchi SiCna-emezigharị oke nke usoro nrụpụta semiconductor na ọnụ ọgụgụ dị ịtụnanya. Teknụzụ mkpuchi mkpuchi a dị ka ọ dị mfe abụrụla ihe ngwọta dị mkpa maka ihe ịma aka atọ dị mkpa nke mmetọ ahụ, nrụrụ okpomọkụ dị elu na mbibi plasma na nrụpụta mgbawa. Ndị na-emepụta akụrụngwa semiconductor kacha elu n'ụwa edepụtala ya dị ka teknụzụ ọkọlọtọ maka akụrụngwa ọgbọ na-abịa. Ya mere, gịnị na-eme mkpuchi a "ihe agha na-adịghị ahụ anya" nke ịmepụta mgbawa? Edemede a ga-enyocha n'ụzọ miri emi ụkpụrụ teknuzu ya, isi ngwa na mbelata ọganiihu.
Ⅰ Nkọwa nke mkpuchi CVD SiC
Ihe mkpuchi CVD SiC na-ezo aka na mkpuchi mkpuchi silicon carbide (SiC) nke etinyebere na mkpụrụ site na usoro ntinye mmiri kemịkalụ (CVD). Silicon carbide bụ ngwakọta nke silicon na carbon, mara maka ike siri ike ya nke ọma, nrụpụta ọkụ dị elu, inertness kemịkalụ na nguzogide oke okpomọkụ. Teknụzụ CVD nwere ike mepụta oyi akwa SiC dị oke ọcha, oke na otu, ma nwee ike dabara nke ọma na geometries siri ike. Nke a na-eme ka mkpuchi CVD SiC dabara adaba maka ngwa ndị na-achọ ihe na-enweghị ike izute site na nnukwu ihe ọdịnala ma ọ bụ ụzọ mkpuchi ndị ọzọ.
Ⅱ Ụkpụrụ usoro CVD
Kemịkalụ vapor deposition (CVD) bụ usoro nrụpụta ihe dị iche iche eji emepụta ihe siri ike dị elu, na-arụkwa ọrụ dị elu. Ụkpụrụ bụ isi nke CVD gụnyere mmeghachi omume nke gaseous precursors n'elu ihe na-ekpo ọkụ na-ekpo ọkụ iji mepụta mkpuchi siri ike.
Nke a bụ nbibi nke usoro SiC CVD dị mfe:
Ihe osise CVD usoro ụkpụrụ
1. mmalite mmalite: Gaseous precursors, a na-ahụkarị silicon-nwere gas (dịka, methyltrichlorosilane - MTS, ma ọ bụ silane - SiH₄) na carbon-nwere gas (dịka, propane - C₃H₈), na-ewebata n'ime mmeghachi omume ụlọ.
2. nnyefe gas: Ndị a precursor gas na-asọfe n'elu kpụ ọkụ n'ọnụ mkpụrụ.
3. Adsorption: Molecules precursor na-adaba n'elu mkpụrụ osisi na-ekpo ọkụ.
4. Mmeghachi omume elu: N'ebe okpomọkụ dị elu, ụmụ irighiri ihe ndị na-emepụta ihe na-enweta mmeghachi omume kemịkalụ, na-ebute nbibi nke precursor na ịmepụta ihe nkiri SiC siri ike. A na-ahapụ ihe ndị na-emepụta ihe n'ụdị gas.
5. Desorption na iyuzucha: Gaseous byproducts desorb si n'elu na mgbe ahụ iyuzucha si ụlọ. Njikwa ziri ezi nke okpomọkụ, nrụgide, ọnụego gas na ntinye uche nke mbụ dị oke mkpa iji nweta ihe nkiri a chọrọ, gụnyere ọkpụrụkpụ, ịdị ọcha, crystallinity na adhesion.
Ⅲ. Ojiji nke CVD SiC mkpuchi na Usoro Semiconductor
Ihe mkpuchi CVD SiC dị mkpa na nrụpụta semiconductor n'ihi na ngwakọta pụrụ iche nke akụrụngwa na-ezute ọnọdụ dị oke egwu na ịdị ọcha siri ike nke gburugburu ebe nrụpụta. Ha na-akwalite iguzogide corrosion plasma, ọgụ kemịkalụ, na ọgbọ irighiri ihe, ihe niile dị oke mkpa iji bulie mkpụrụ wafer na oge akụrụngwa.
Ndị a bụ ụfọdụ akụkụ mkpuchi CVD SiC na ọnọdụ ngwa ha:
1. Plasma Etching Chamber na mgbanaka mgbanaka
Ngwaahịa: CVD SiC mkpuchi mkpuchi, isi mmiri ịsa ahụ, ihe mgbochi, na mgbanaka mgbanaka.
Ngwa: Na plasma etching, a na-eji plasma na-arụsi ọrụ ike nke ukwuu iji họrọ wepụ ihe na wafers. Ihe ndị na-enweghị mkpuchi ma ọ bụ nke na-adịte aka na-emebi ngwa ngwa, na-ebute mmerụ ahụ na nkwụsịtụ ugboro ugboro. Ihe mkpuchi CVD SiC nwere ezigbo nguzogide kemịkalụ plasma na-eme ihe ike (dịka ọmụmaatụ, fluorine, chlorine, plasmas bromine), gbatịa ndụ nke ihe mejupụtara ọnụ ụlọ, ma belata ọgbọ irighiri ihe, nke na-abawanye mkpụrụ wafer ozugbo.
2.PECVD na HDPCVD ụlọ
Ngwaahịa: CVD SiC mkpuchi mkpuchi ụlọ na electrodes.
Ngwa: Plasma enhanced chemical vapor deposition (PECVD) na nnukwu njupụta plasma CVD (HDPCVD) ka a na-eji na-edebe ihe nkiri dị gịrịgịrị (eg, dielectric layers, passivation layers). Usoro ndị a na-agụnyekwa gburugburu plasma siri ike. Ihe mkpuchi CVD SiC na-echebe mgbidi ụlọ na electrodes site na mbuze, na-ahụ maka ịdị mma ihe nkiri na-agbanwe agbanwe na ibelata ntụpọ.
3. Ion ntinye akụrụngwa
Ngwaahịa: CVD SiC ihe mkpuchi beamline mkpuchi (dịka ọmụmaatụ, oghere, iko Faraday).
Ngwa: Ịkụnye ion na-ewebata ion dopant n'ime ihe ndị mejupụtara semiconductor. Ogwu ion nwere ike dị elu nwere ike ime ka sputter na nsị nke ihe ndị ekpughere. Isi ike na ịdị ọcha dị elu nke CVD SiC na-ebelata ọgbọ irighiri ihe site na ngwa beamline, na-egbochi mmetọ nke wafers n'oge usoro doping a dị oke egwu.
4. Epitaxial reactor components
Ngwaahịa: CVD SiC mkpuchi mkpuchi na ndị nkesa gas.
Ngwa: Epitaxial uto (EPI) na-agụnye na-eto eto nke ukwuu kristal n'ígwé na a mkpụrụ na elu okpomọkụ. Ihe mkpuchi mkpuchi CVD SiC na-enye nkwụsi ike dị mma na kemịkalụ kemịkalụ na oke okpomọkụ, na-ahụ maka ikpo ọkụ otu na igbochi mmetọ nke susceptor n'onwe ya, nke dị oke mkpa iji nweta ọkwa epitaxial dị elu.
Ka mgbawa geometries na-ebelata na usoro ihe a na-achọsi ike, ọchịchọ maka ndị na-ebunye mkpuchi CVD SiC dị elu na ndị na-emepụta mkpuchi CVD na-aga n'ihu na-eto eto.
IV. Kedu ihe ịma aka nke usoro mkpuchi CVD SiC?
N'agbanyeghị nnukwu uru nke mkpuchi CVD SiC, nrụpụta ya na ngwa ya ka na-eche nsogbu ụfọdụ ihu. Ịdozi ihe ịma aka ndị a bụ isi ihe iji nweta arụmọrụ kwụsiri ike na ọnụ ahịa ọnụ ahịa.
Ihe ịma aka:
1. Adhesion na mkpụrụ
SiC nwere ike bụrụ ihe ịma aka iji nweta nrapado siri ike na otu na ihe dị iche iche nke mkpụrụ (dịka ọmụmaatụ, graphite, silicon, ceramic) n'ihi ọdịiche dị na ọnụọgụ mgbasawanye ọkụ na ike elu. Adhesion na-adịghị mma nwere ike iduga delamination n'oge ịgba ígwè ọkụ ma ọ bụ nrụgide n'ibu.
Ngwọta:
Nkwadebe elu: Nhicha nke ọma na ọgwụgwọ elu (dịka ọmụmaatụ, etching, plasma ọgwụgwọ) nke mkpụrụ iji wepụ ihe ndị na-emerụ emerụ ma mepụta ebe kachasị mma maka njikọta.
Interlayer: Tinye ihe mkpuchi interlayer dị gịrịgịrị na ahaziri ahazi (dịka ọmụmaatụ, carbon pyrolytic, TaC - yiri mkpuchi CVD TaC na ngwa ndị akọwapụtara) iji belata ndakọrịta mgbasawanye thermal ma kwalite adhesion.
Welie paramita nkwụnye ego: Jiri nlezianya jikwaa ọnọdụ okpomọkụ, nrụgide, na oke gas iji kwalite nucleation na uto nke ihe nkiri SiC ma kwalite njikọ ihu igwe siri ike.
2. Ihe nkiri nrụgide na mgbawa
N'oge nkwụnye ego ma ọ bụ oyi na-esote, nrụgide fọdụrụnụ nwere ike ịmalite n'ime ihe nkiri SiC, na-eme ka mgbawa ma ọ bụ na-agbawa agbawa, karịsịa na geometry buru ibu ma ọ bụ mgbagwoju anya.
Ngwọta:
Njikwa okpomọkụ: Jikwaa kpomkwem na ọnụego jụrụ oyi iji belata ujo na nrụgide okpomọkụ.
Mkpuchi gradientJiri ụzọ mkpuchi multilayer ma ọ bụ gradient jiri nwayọọ nwayọọ gbanwee ihe mejupụtara ma ọ bụ nhazi ihe iji nabata nrụgide.
Mkpesa nkwụnye ego gachara: Kpochapụ akụkụ ndị a kpuchiri ekpuchi iji kpochapụ nrụgide fọdụrụnụ ma melite iguzosi ike n'ezi ihe nkiri.
3. Nkwekọrịta na ịdị n'otu na mgbagwoju anya Geometries
Ịtụnye mkpuchi siri ike na nke dabara adaba n'akụkụ nwere ụdị mgbagwoju anya, akụkụ dị elu, ma ọ bụ ọwa dị n'ime nwere ike isi ike n'ihi oke na mgbasawanye na mmeghachi omume kinetics.
Ngwọta:
Nrụpụta ihe nrụpụta reactor: Chepụta CVD reactors na kacha gas eruba dynamics na okpomọkụ uniformity iji hụ na otu nkesa nke precursors.
Nhazi nhazi usoro: Nrụgide nkwụnye ego dị mma, ọnụego na-asọpụta, na ntinye uche nke mbụ iji kwalite mgbasa nke gas n'ime atụmatụ mgbagwoju anya.
Ndokwa ọtụtụ ọkwa: Jiri usoro nkwụnye ego na-aga n'ihu ma ọ bụ ihe ndozi na-atụgharị iji hụ na ekpuchiri elu niile nke ọma.
V. FAQ
Q1: Gịnị bụ isi ihe dị iche n'etiti CVD SiC na PVD SiC na semiconductor ngwa?
A: mkpuchi CVD bụ ihe owuwu kristal kọlụm nwere ịdị ọcha> 99.99%, dabara maka gburugburu plasma; Ihe mkpuchi PVD na-abụkarị amorphous / nanocrystalline nwere ịdị ọcha nke <99.9%, nke a na-ejikarị eme ihe maka ịchọ mma.
Q2: Gịnị bụ oke okpomọkụ nke mkpuchi nwere ike idi?
A: Nkwenye oge dị mkpirikpi nke 1650 ° C (dị ka usoro nkwụsịtụ), njedebe iji ogologo oge nke 1450 ° C, gafere okpomọkụ a ga-eme ka ntụgharị nke oge site na β-SiC gaa na α-SiC.
Q3: Ụdị mkpuchi mkpuchi a na-ahụkarị?
A: Semiconductor components bụ ukwuu n'ime 80-150μm, na ụgbọ elu engine EBC mkpuchi nwere ike iru 300-500μm.
Q4: Gịnị bụ isi ihe na-emetụta ọnụ ahịa?
A: Ịdị ọcha nke mbụ (40%), oriri ike akụrụngwa (30%), mfu (20%). Ọnụ ego otu nke mkpuchi mkpuchi dị elu nwere ike iru $ 5,000 / kg.
Q5: Gịnị bụ ndị isi zuru ụwa ọnụ na-eweta?
A: Europe na United States: CoorsTek, Mersen, Ionbond; Eshia: Semixlab, Veteksemicon, Kalex (Taiwan), Sayensị (Taiwan)
Oge nzipu: Jun-09-2025