Mmetụta nke okpomọkụ dị iche iche na uto nke CVD SiC mkpuchi

Kedu ihe bụ CVD SiC mkpuchi?

Kemịkalụ vapor deposition (CVD) bụ usoro ntinye oghere eji emepụta ihe siri ike dị oke ọcha. A na-ejikarị usoro a eme ihe na mpaghara mmepụta semiconductor iji mepụta ihe nkiri dị mkpa n'elu wafers. N'ime usoro ịkwadebe silicon carbide site na CVD, a na-ekpughe mkpụrụ osisi ahụ n'otu ụzọ ma ọ bụ karịa na-agbanwe agbanwe, nke na-emeghachi kemịkalụ n'elu mkpụrụ ahụ iji tinye nkwụnye ego silicon carbide chọrọ. N'ime ọtụtụ ụzọ maka ịkwadebe ihe ndị na-emepụta silicon carbide, ngwaahịa ndị a kwadebere site na ntinye ikuku nke kemịkalụ nwere ịdị elu dị elu na ịdị ọcha, na usoro a nwere njikwa usoro siri ike. Ihe CVD silicon carbide nwere ngwakọta pụrụ iche nke ezigbo thermal, eletriki na kemịkal, na-eme ka ha dị mma maka ojiji na ụlọ ọrụ semiconductor ebe achọrọ ihe dị elu. A na-ejikarị CVD silicon carbide components na etching akụrụngwa, MOCVD akụrụngwa, Si epitaxial akụrụngwa na SiC epitaxial akụrụngwa, ngwa ngwa thermal nhazi ngwa na ndị ọzọ ubi.

Isiokwu a na-elekwasị anya n'ịtụle àgwà nke mkpa fim toro na dị iche iche usoro okpomọkụ n'oge nkwadebe nkeCVD SiC mkpuchi, ka ịhọrọ usoro okpomọkụ kachasị mma. Nnwale ahụ na-eji graphite dị ka mkpụrụ na trichloromethylsilane (MTS) dị ka gas mmeghachi omume. A na-echekwa mkpuchi SiC site na usoro CVD dị ala, yana micromorphology nkeCVD SiC mkpuchiA na-ahụ ya site na nyocha microscopy eletrọn iji nyochaa njupụta nhazi ya.

N'ihi na elu okpomọkụ nke graphite mkpụrụ bụ nnọọ elu, na etiti gas ga-desorbed na apụọkwa si n'elu mkpụrụ n'elu, na n'ikpeazụ, C na Si fọdụrụ na mkpụrụ n'elu ga-etolite siri ike na-adọ SiC na-etolite SiC mkpuchi. Dị ka usoro mmepe nke CVD-SiC dị n'elu, a pụrụ ịhụ na okpomọkụ ga-emetụta mgbasa nke gas, nbibi nke MTS, nhazi nke ụmụ irighiri mmiri na nkwụsịtụ na nkwụsị nke gas dị n'etiti, ya mere, okpomọkụ nke nkwụnye ego ga-arụ ọrụ dị mkpa na morphology nke mkpuchi SiC. Ọdịdị microscopic morphology nke mkpuchi bụ ihe ngosi kachasị mma nke njupụta nke mkpuchi. Ya mere, ọ dị mkpa iji mụọ mmetụta nke ọnọdụ okpomọkụ dị iche iche na-ahụ maka ihe ndị dị na microscopic morphology nke CVD SiC mkpuchi. Ebe ọ bụ na MTS nwere ike decompose na nkwụnye ego SiC mkpuchi n'etiti 900 ~ 1600 ℃, a nnwale ahọrọ ise deposition okpomọkụ nke 900 ℃, 1000 ℃, 1100 ℃, 1200 ℃ na 1300 ℃ maka nkwadebe nke SiC mkpuchi na-amụ mmetụta nke mkpuchi na CVD-Si. E gosipụtara ihe ndị a kapịrị ọnụ na Tebụl 3. Ihe osise 2 na-egosi morphology microscopic nke mkpuchi CVD-SiC toro na ọnọdụ okpomọkụ dị iche iche.

Mgbe ọnọdụ okpomọkụ dị 900 ℃, SiC niile na-etolite n'ụdị eriri. Enwere ike ịhụ na dayameta nke otu eriri dị ihe dịka 3.5μm, na akụkụ ya dị ihe dịka 3 (<10). Ọzọkwa, ọ bụ ihe mejupụtara nano-SiC na-enweghị atụ, yabụ na ọ bụ nke usoro SiC polycrystalline, nke dị iche na SiC nanowires ọdịnala na ahịhịa SiC nke otu-kristal. SiC fibrous a bụ nrụrụ arụrụ arụ nke usoro usoro enweghị ezi uche kpatara. Enwere ike ịhụ na nhazi nke mkpuchi SiC a dị ntakịrị, yana ọnụ ọgụgụ dị ukwuu nke pores n'etiti fibrous SiC, na njupụta dị nnọọ ala. Ya mere, okpomọkụ a adịghị mma maka nkwadebe nke nnukwu mkpuchi SiC. Ọtụtụ mgbe, ntụpọ SiC fibrous na-eme ka ọ bụrụ oke okpomoku itinye ego. N'ebe okpomọkụ dị ala, obere ụmụ irighiri ihe ndị a na-agbanye n'elu nke mkpụrụ ahụ nwere ike dị ala na ike ịkwaga na-adịghị mma. Ya mere, obere ụmụ irighiri ihe na-aga ịkwaga ma na-eto ruo n'elu ala kachasị elu nke ike n'efu nke SiC (dị ka ọnụ ọnụ ọka). Uto ntụzịaka na-aga n'ihu na-emecha nwee ntụpọ nhazi SiC nwere fibrous.

Nkwadebe nke mkpuchi CVD SiC:

Nke mbụ, a na-etinye mkpụrụ graphite n'ime ọkụ ọkụ na-ekpo ọkụ ma debe ya na 1500 ℃ maka 1h na ikuku Ar maka iwepụ uyi. Mgbe ahụ, a na-egbutu ngọngọ graphite n'ime ngọngọ nke 15x15x5mm, a na-ehichapụkwa elu nke graphite block na 1200-mesh sandpaper iji kpochapụ pores elu nke na-emetụta ntinye nke SiC. A na-eji ethanol anhydrous na mmiri distilled sachaa ngọngọ graphite a na-agwọ, wee tinye ya na oven na 100 ℃ maka ihicha. N'ikpeazụ, a na-etinye mkpụrụ graphite na mpaghara okpomọkụ nke ọkụ tubular maka ntinye SiC. E gosipụtara eserese eserese nke sistemu ikuku ikuku kemịkalụ na eserese 1.

NkeCVD SiC mkpuchiAhụrụ ya site n'inyocha microscopy eletrọn iji nyochaa nha nha na njupụta ya. Tụkwasị na nke ahụ, a gbakọrọ ọnụego nkwụnye ego nke mkpuchi SiC dịka usoro dị n'okpuru: VSiC=(m2-m1)/(Sxt)x100% VSiC= Ọnụego nkwụnye ego; m2-nchịkọta mkpuchi mkpuchi (mg); m1 - oke nke mkpụrụ (mg); Mpaghara S-elu nke mkpụrụ (mm2); t - oge nkwụnye ego (h).   CVD-SiC dị mgbagwoju anya, enwere ike ịchịkọta usoro a dị ka ndị a: na okpomọkụ dị elu, MTS ga-enweta ire ere ọkụ iji mepụta isi iyi carbon na obere mkpụrụ ndụ silicon. Obere ụmụ irighiri ihe nke carbon na-agụnye CH3, C2H2 na C2H4, yana obere mkpụrụ ndụ silicon na-agụnye SiCI2, SiCI3, wdg; A ga-ebuga ndị a carbon isi iyi na silicon obere ụmụ irighiri ihe n'elu nke graphite mkpụrụ site na ebu gas na diluent gas, na mgbe ahụ, ndị a obere ụmụ irighiri ihe ga-adsorbed n'elu nke mkpụrụ n'ụdị adsorption, na mgbe ahụ, kemịkalụ mmeghachi omume ga-eme n'etiti obere ụmụ irighiri na-etolite obere ụmụ irighiri mmiri na-eji nwayọọ nwayọọ na-eto eto, na ụmụ irighiri mmiri na-emepụta ga-ejikọta ọnụ. site na ngwaahịa (HCl gas); Mgbe okpomọkụ na-ebili na 1000 ℃, njupụta nke mkpuchi SiC na-akawanye mma. Enwere ike ịhụ na ọtụtụ n'ime mkpuchi ahụ bụ ọka SiC (ihe dị ka 4μm n'ogo), ma a na-ahụkwa ụfọdụ ntụpọ SiC fibrous, nke na-egosi na a ka nwere ọganihu ntụziaka nke SiC na okpomọkụ a, na mkpuchi ahụ ka na-adịghị oke. Mgbe okpomọkụ na-ebili na 1100 ℃, enwere ike ịhụ na mkpuchi SiC dị oke oke, na ntụpọ SiC nke fibrous apụwo kpamkpam. Ihe mkpuchi ahụ bụ ụmụ irighiri SiC nke yiri droplet nwere dayameta nke ihe dịka 5 ~ 10μm, bụ nke jikọtara ọnụ. N'elu nke ahụ dị oke ike. Ọ bụ mkpụrụ ọka SiC nwere oke nano na-enweghị atụ. N'ezie, usoro mmepe nke CVD-SiC na 1100 ℃ aghọọla njikwa mbufe oke. Obere ụmụ irighiri ihe a gbanyere n'elu nke mkpụrụ ahụ nwere ike zuru oke na oge iji mebie ma too n'ime ọka SiC. Mkpụrụ ọka SiC n'otu n'otu na-etolite nnukwu ụmụ irighiri mmiri. N'okpuru ọrụ nke ike elu, ọtụtụ n'ime ụmụ irighiri mmiri na-apụta gburugburu, na ụmụ irighiri mmiri na-ejikọta ya nke ọma iji mepụta mkpuchi SiC siri ike. Mgbe okpomọkụ na-ebili na 1200 ℃, mkpuchi SiC dịkwa oke, ma SiC morphology na-aghọ multi-ridged na elu nke mkpuchi na-egosi rougher. Mgbe okpomọkụ na-abawanye ruo 1300 ℃, a na-ahụ ọnụ ọgụgụ buru ibu nke akụkụ okirikiri mgbe niile nke nwere dayameta nke ihe dị ka 3μm n'elu mkpụrụ graphite. Nke a bụ n'ihi na n'oge okpomọkụ a, SiC agbanweela ka ọ bụrụ njedebe nke gas, na ọnụ ọgụgụ ire ere nke MTS dị ngwa ngwa. Obere ụmụ irighiri ihe emeghachila omume wee mebie mkpụrụ osisi SiC tupu etinye ha n'elu ala. Mgbe ọka na-etolite irighiri ihe okirikiri, ha ga-ada n'okpuru ebe a, na-emecha nweta mkpuchi nke SiC rụrụ arụ na njupụta adịghị mma. N'ụzọ doro anya, 1300 ℃ enweghị ike iji dị ka akpụ okpomọkụ nke ok SiC mkpuchi. Ntụle zuru oke na-egosi na ọ bụrụ na a ga-akwado mkpuchi mkpuchi SiC siri ike, ezigbo CVD deposition okpomọkụ bụ 1100 ℃.

Ọnụọgụ 3 na-egosi ọnụego ntinye nke mkpuchi CVD SiC na ọnọdụ okpomọkụ dị iche iche. Ka ọnọdụ okpomọkụ nke nkwụnye ego na-abawanye, ọnụego ntinye nke mkpuchi SiC ji nwayọọ nwayọọ na-ebelata. Ọnụ ego nkwụnye ego na 900 ° C bụ 0.352 mg · h-1 / mm2, na ntụgharị ntụzịaka nke eriri na-eduga na ntinye ntinye ngwa ngwa. Ọnụ ego ntinye nke mkpuchi na njupụta kachasị elu bụ 0.179 mg · h-1 / mm2. N'ihi ntinye nke ụfọdụ akụkụ SiC, ọnụego nkwụnye ego na 1300 Celsius bụ nke kachasị ala, naanị 0.027 mg·h-1/mm2.   Mmechi: kacha mma CVD nkwụnye okpomọkụ bụ 1100 ℃. Obere okpomọkụ na-akwalite uto ntụziaka nke SiC, ebe okpomọkụ dị elu na-eme ka SiC na-emepụta ntinye nke vapo ma mee ka mkpuchi dị ntakịrị. Site na mmụba nke ọnọdụ okpomọkụ, ọnụego nkwụnye ego nkeCVD SiC mkpuchiji nwayọọ nwayọọ na-ebelata.