Kedu ihe bụ mkpuchi TaC?

N'ime ụlọ ọrụ semiconductor na-eto ngwa ngwa, ihe ndị na-eme ka arụmọrụ, ịdịte aka, na arụmọrụ dị oke mkpa. Otu ihe ọhụrụ dị otú ahụ bụ mkpuchi Tantalum Carbide (TaC), oyi akwa mkpuchi nke etinyere na ihe ndị graphite. Blọọgụ a na-enyocha nkọwa mkpuchi mkpuchi TaC, uru teknụzụ, yana ngwa mgbanwe ya na nrụpụta semiconductor.

Ⅰ Kedu ihe bụ mkpuchi TaC?

Mkpuchi TaC bụ akwa seramiiki na-arụ ọrụ dị elu nke mejupụtara tantalum carbide (ngwakọta nke tantalum na carbon) etinyere n'elu graphite. A na-etinye ihe mkpuchi ahụ site na iji Chemical Vapor Deposition (CVD) ma ọ bụ Physical Vapor Deposition (PVD), na-emepụta ihe mgbochi dị oke, nke dị ọcha nke na-echebe graphite site na ọnọdụ dị oke egwu.

Njirimara igodo nke mkpuchi TaC

●Nkwụsi ike dị elu: Na-eguzogide okpomọkụ karịrị 2200C, na-arụ ọrụ omenala dị ka silicon carbide (SiC), nke na-eweda n'elu 1600 ° C.

●Nguzogide kemịkalụ: Na-eguzogide corrosion sitere na hydrogen (H₂), amonia (NH₃), vapors silicon, na ọla a wụrụ awụ, dị mkpa maka gburugburu nhazi semiconductor.

●Ọcha dị elu: Ọkwa adịghị ọcha n'okpuru 5 ppm, na-ebelata ihe egwu mmetọ na usoro uto kristal.

●Thermal na Mechanical Inogide: Adhesion siri ike na graphite, mgbasawanye ọkụ dị ala (6.3 × 10⁻⁶ / K), na ike (~ 2000 HK) na-eme ka ogologo ndụ dị ogologo n'okpuru ịgba ígwè ọkụ.

Ⅱ Mkpuchi TaC na nrụpụta Semiconductor: Ngwa igodo

Ngwa graphite nwere mkpuchi taC dị mkpa na nrụpụta semiconductor dị elu, ọkachasị maka ngwaọrụ silicon carbide (SiC) na gallium nitride (GaN). N'okpuru bụ ikpe ojiji ha dị oke egwu:

1. SiC Single Crystal Growth

SiC wafers dị mkpa maka eletrik eletrik na ụgbọ ala eletrik. A na-eji crucibles graphite mkpuchi na TaC na susceptors na ụgbọ njem anụ ahụ (PVT) na CVD dị elu okpomọkụ maka:

● Kwụsị mmetọ: Ọdịnaya adịghị ọcha nke TaC (dịka ọmụmaatụ, boron <0.01 ppm vs. 1 ppm na graphite) na-ebelata ntụpọ na kristal SiC, na-eme ka mgbochi wafer (4.5 ohm-cm vs. 0.1 ohm-cm maka graphite na-enweghị mkpuchi).

● Kwalite njikwa okpomọkụ: Uniform emissivity (0.3 na 1000 ° C) na-eme ka nkesa okpomọkụ na-agbanwe agbanwe, na-eme ka kristal dị mma.

2. Uto Epitaxial (GaN/SiC)

Na metal-Organic CVD (MOCVD) reactors, TaC nwere mkpuchi dị ka ndị na-ebu wafer na injectors:

●Gbochie mmeghachi omume gas: Na-eguzogide itching site na amonia na hydrogen na 1400ºC, na-ejigide iguzosi ike n'ezi ihe reactor.

●Melite Mpụta: Site na ibelata mkpofu site na graphite, mkpuchi CVD TaC na-ebelata ntụpọ na akwa epitaxial, dị oke mkpa maka LEDs na ngwaọrụ RF dị elu.

3. Ngwa Semiconductor ndị ọzọ

●Igwe ọkụ ọkụ dị elu: Ndị na-ekpo ọkụ na ndị na-ekpo ọkụ na mmepụta GaN na-erite uru site na nkwụsi ike nke TaC na gburugburu ikuku hydrogen.

●Ijikwa wafer: Ihe mkpuchi dị ka mgbanaka na mkpuchi na-ebelata mmetọ ọla n'oge nnyefe wafer

Ⅲ. Kedu ihe kpatara mkpuchi TaC ji eme ihe ọzọ?

Ntụnyere ihe ndị a na-emekarị na-egosi ịdị elu TaC:

Data sitere na ntụnyere ụlọ ọrụ

IV. Kedu ihe kpatara ịhọrọ VET?

Mgbe itinye ego na-aga n'ihu na nyocha teknụzụ na mmepe,VET's Tantalum carbide (TaC) mkpuchi akụkụ, dị kaMgbanaka ntuziaka graphite mkpuchi mkpuchi TaC, CVD TaC mkpuchi efere susceptor, TaC mkpuchi mkpuchi maka ngwa Epitaxy,Tantalum carbide ihe mkpuchi graphite nwere ogherenaWafer susceptor nwere mkpuchi TaC, na-ewu ewu nke ukwuu n'ahịa Europe na America. VET na-atụsi anya ike ịbụ onye mmekọ ogologo oge.