Ubuyobozi bwuzuye ku bikoresho bya Graphite Susceptors bifite isuku nyinshi

Mu gukora ibikoresho bya semiconductor bigezweho no mu gukora semiconductor y’ikinyejana cya gatatu (nka Silicon Carbide [SiC] na Gallium Nitride [GaN]), ibiganiro mu nganda akenshi bibanda ku mashini zikora lithography za EUV zigezweho cyane, plasma etchers, cyangwa precursor gas purity. Ariko, mu kirere cy’icyumba cy’iraburo gifite isuku cyane, cyangiza cyane, kandi gishyushye cyane, hari intwari ikomeye itaramenyekana: Graphite susceptor.

1. Susceptor ya Graphite ni iki?

A Igikoresho cya grafitini igice cy’ibikoresho by’ikoranabuhanga byakozwe mu buryo bunoze kandi bukozwe muri grafiti ikozwe muri iso cyangwa ivanywemo, akenshi ifite ishusho ya disiki, ifunze, cyangwa ikozwe mu buryo bwihariye.imiterere y'ishusho y'ibipimo bitatu yagenewe guhuza n'ibyumba byihariye by'ubutabazi.

Mu bikoresho nka Chemical Vapor Deposition (CVD), Metal-Organic Chemical Vapor Deposition (MOCVD), na Rapid Thermal Processing (RTP), akazi k'ibanze k'urubuga rwo gutwara ni ugufata neza wafer za semiconductor mu gihe zikora nk'igikoresho cy'ibanze cyo gushyushya ubushyuhe. Hakoreshejwe uburyo bwa Graphite susceptor induction heating mechanisms, igice cy'ibikoresho cyinjiza vuba ingufu za Radio Frequency (RF) cyangwa microwave electromagnetic hanyuma kikayihinduramo ingufu z'ubushyuhe zingana, bityo bikorohereza kugenzura ubushyuhe ku rwego rwa milisegonda ku buso bwa wafer.

2. Imiterere y'ibikoresho n'imiterere mito: Kuki Graphite ya Isostatic + CVD SiC Coating ikoreshwa?

Graphite idapfutse idapfutse ntishobora kwihanganira ikirere cy’ibinyabutabire gikomeye n’ibisabwa mu isuku ikomeye yo gukora semiconductor. Imashini zigezweho zikoresha Graphite zikora neza zikoresha sisitemu yihariye igizwe n’ibice bibiri:

(1) Igice cya Graphite Isostatic Substrate cyuzuye ubuziranenge bwinshi

Iyi substrate y'ibanze ikorwa hakoreshejwe grafiti ikandagiwe muri isostatically. Mu kunoza uburyo grafiti ifatana neza na crystalline, igera ku miterere ya isotropic, porosity nke, n'imbaraga nyinshi zo guhindagurika kwa mekanike, bitanga urufatiro rwiza rwo gukoresha imiterere y'imifuka ya wafer ikozwe muri micro-machine.

(2) Ubwikorezi bwo kurinda bwa CVD Silicon Carbide (SiC)

Hakoreshejwe uburyo bwa Chemical Vapor Deposition, urwego rw'ubushyuhe bwinshi bwa poly-crystalline B-SiC (ubusanzwe ifite ubugari bwa 10 kugeza 100 um hamwe n'ubuziranenge bwa 99.999%) ruhingwa hejuru y'ubutaka bwa grafiti. Ubu buryo bufunga burundu utunyangingo tw'ubuso bwa grafiti, bukarinda gushonga kw'uduce, kandi bugatanga uruzitiro rudashobora kwinjiramo rwangiza imyuka nka HCI, NH,, n'ibinyabutabire bya fluorine.

3. Imiterere y'ingenzi y'umubiri n'ibisobanuro by'ibikoresho

Hashingiwe ku isuzuma rikomeye rya laboratwari n'ibipimo ngenderwaho byemewe n'inganda, ibikoresho bya Graphite bifite isuku nyinshi bigaragaza ibipimo by'ingenzi bikurikira:

Ibyiza by'Ubwubatsi bw'ibanze:

1. Ubudahangarwa bw'ingufu z'ubushyuhe bukabije: Ishobora kwihanganira ibihe by'ubushyuhe n'ubukonje bihoraho (birenze 1500°C) idacitse cyangwa ngo ivange.

2. Ubusembwa bw'ibinyabutabire: Ntirindwa burundu kwangirika kwa H2, NH3, imyuka ya silane, n'ibintu bisukura cyane.

3. Guhuza igipimo cy'ubwiyongere bw'ubushyuhe (CTE): Uburyo bwa VET Energy bwo gushyira SiC buhuza imyitwarire yo kwaguka k'ubushyuhe bw'igishishwa cya SiC n'inkingi ya grafiti, bikarinda kuvunika kw'igishishwa mu bushyuhe bukabije.

4. Uruhare n'Ikoreshwa mu Gutunganya Semiconductor

Ibikoresho bya Graphite byizewe cyane bikora nk'ibice by'ibanze bifasha mu ntambwe nyinshi z'ingenzi zo gukora semiconductor:

(1) Imikurire ya Epitaxial ya CVD na MOCVD (Epi)

Mu gukora GaN LED, epitaxy y'ibikoresho by'amashanyarazi bya SiC, na silicon wafer epi-growth, ubugari bwa filime n'ubunini bwa doping biterwa cyane n'uburyo ikirere gishyuha gihuzwa. Ibikoresho bya grafiti bikwirakwiza ubushyuhe ku buryo bungana mu miterere imwe cyangwa myinshi ya wafer mu gihe cyo kuzenguruka, bigahagarika imirongo ya wafer iterwa n'ubushyuhe itera cyangwa itemba.

(2) Gukuramo Ikirahure kimwe (Uburyo bwa PVT)

Mu gihe cyo gukura kwa Silicon Carbide (SiC) na Safiro crystal binyuze mu gutwara umwuka ushyushye (PVT), susceptor igena imiterere y'ubushyuhe, ikayobora mu buryo butaziguye imiterere y'ingufu imwe kandi ikagabanya ubucucike bw'ingufu.

(3) Gutunganya Ubushyuhe bwihuse (RTP) & Annealing

Ikoresheje ubushyuhe bwa Graphite susceptor bunoze, uru rubuga rutuma habaho igihe cyo gusubiza ubushyuhe vuba cyane gikenewe kugira ngo habeho uburyo bwo gukurura no gutandukanya ibyuma nyuma yo guteranya.

5. Kuki wahitamo VET Energy?

Hamwe n'ibisabwa byinshi kugira ngo imiyoboro y'ibicuruzwa ikomeze kuba myiza, isuku ikabije, kandi ikomeze igihe kirekire,VET Energyigaragara nk'umufatanyabikorwa w'ubwubatsi mpuzamahanga wizewe:

1. Gukora imashini ntoya neza: Ibikoresho byo gutunganya CNC bifite umurongo munini bitanga imifuka ikomeye ya wafer, imiyoboro mito, n'imiyoboro ya gaze ikoreshwa mu kirere hamwe n'ubushobozi bwo kwihanganira kugeza ku rwego rwa mikorometero.

2. Gutanga CVD SiC yo mu bwoko bwa Advanced Dense Deposition: Uburyo bwacu bwa CVD bwite bugera ku biti bya SiC birebire cyane kandi bishobora gukonjeshwa n'indorerwamo, byongera igihe cyo gukora ku bushyuhe kirenga 30%.

3. Ahantu ho gutunganya ibintu hasukuye cyane: Gusukura no gutunganya icyumba cy'isuku bitanga icyizere cy'uko ivu ryose riguma munsi ya 5 ppm, bihaza imiyoboro ikomeye ya OEM semiconductorAmahame ngenderwaho ya Fab.

4. Ikiguzi cyiza cyo gutunga umutungo (CoO): VET Energy itanga igihe cyo kwihutisha amafaranga ukurikije igipimo cy’ibiciro n’imikorere, ifasha abakora chips kugabanya amafaranga akoreshwa.