Inyigo: Ibice bya Graphite Isuku Yera ku Bushyuhe bwa Santimetero 32 mu Gukura kwa Silikoni yo mu bwoko bwa N

Intangiriro: Ikibazo cy'ubushyuhe bwa santimetero 32 mu gukura kwa silicon yo mu bwoko bwa N ikora neza cyane

Mu gihe inganda zikora utwuma dukoresha ingufu z'izuba (photovoltaics) zihinduka vuba cyane kuva kuri P-type PERC zikajya kuri N-type TOPCon na Heterojunction (HJT), icyifuzo cy'uturemangingo twa silikoni tw'ubwoko bwa purity cyariyongereye cyane. Utwuma twa silikoni tw'ubwoko bwa N dukenera igihe kinini cyane cyo gutwara ibintu (ubusanzwe ni >300 μs) kandi hafi ya zeru ni ubwandu bw'icyuma gihinduka.

Kugira ngo bongere umusaruro, abakora silicon wafer barimo kongera ingano za crucible kugeza kuri santimetero 32 no hejuru. Ariko, gukora ku bushyuhe burenga dogere selisiyusi 1,450 mu busitani bwa santimetero 32 biteza imbogamizi zikomeye mu buhanga:

1. Kwangirika kw'ubushyuhe n'ubudahuza:Ubushyuhe bwinshi butera kwangirika kw'imiterere no kwangirika mu byuma bishyushya bya grafiti bisanzwe n'ibice by'imbere.
2. Kwanduzwa kw'icyuma gihindagurika:Ibintu by’umwanda (Fe, Ni, Cu, V) biri muri grafiti isanzwe birahinduka umwuka mu gihe cyo gukurura kristu igihe kirekire, bikimukira muri silikoni ishongeshejwe bigatera kwangirika gukomeye mu buzima bwabyo.

Umuti w'Ubuhanga: Gukingira Graphite Isostatic na CVD SiC byakozwe mu buryo bwa Ultra-Purified Isostatic Graphite na CVD SiC

Kugira ngo batsinde izi mbogamizi za tekiniki, VeTek Semiconductor yashyizeho uburyo bwo kuvugurura ibikoresho byose mu gice cyose cy’ubushyuhe cya santimetero 32, kigizwe na grafiti ifite ubucucike bwinshi yashyizwemo halogen ikoreshwa mu bushyuhe bwinshi ndetse n’ingufu zo kurinda CVD Silicon Carbide (SiC).

1. Gusukura Halogen Yimbitse (Ivu ririmo ≤ 2-5 ppm)

Grafiti isanzwe y’inganda irimo ivu ryinshi riri hagati ya 50 ppm na 200 ppm. Ku bushyuhe bwa 1,450°C munsi y’umwuka, ibi bintu bito birahinduka. Uburyo bwacu bwite bwo gutunganya gazi ya Halogen mu bushyuhe bwinshi buhindura imyanda y’icyuma mo ibintu bihindagurika bya halogen (chloride/fluoride) ku bushyuhe buri hejuru ya 2,400°C.

• Isuzuma rya GDMS (Glow Discharge Mass Spectrometry)igenzura ko imyanda yose y’icyuma (Fe, Cr, Ni, Cu, V) yagabanutse ikagera munsi ya 0.5 ppm, bigatuma ivu muri rusange riba ≤ 2 ppm.
• Ibisubizo:Bikuraho ihindagurika ry’ibyuka by’icyuma inyuma, bikarinda ikidendezi cya silikoni cyashongeshejwe kwanduzwa mu masaha arenga 120 yo gukurura ibintu bidashira.

2. Imiterere ya Graphite Isostatic ifite ubucucike bwinshi kugira ngo ubushyuhe bukomeze guhagarara neza

Ibice birimo icyuma gishyushya icyuma gishyushya icyuma, icyuma gishyushya icyuma gishyushya icyuma, n'icyuma gishyushya icyuma gikozwe mu buryo bwa "high density" (1.85 g / cm³), "fine-grate" isostatic grate (ingano y'ingano <10 μm). Gukanda isostatic bituma habaho kwaguka k'ubushyuhe bwa isotropic (CTE), bikarinda ubushyuhe bwo mu gace runaka, guhindagurika no gucikagurika mu buryo bw'ubushyuhe mu bihe by'ubushyuhe bihoraho.

3. Ubwikorezi bwo kurinda CVD Silicon Carbide (SiC)

Ibice by'ingenzi byangiritse ku mwuka wa silikoni n'imyuka ihumanya ikoreshwa mu gusohora imyuka bitwikiriwe n'urwego rw'ubucucike bwa 50–80 μm rwa Silicon Carbide (SiC) ya Chemical Vapor Deposition (CVD).

• Inzitizi yo kwangirika:Irinda imikorere ya shimi itaziguye hagati y’umwuka wa silikoni uhindagurika (SiO2) n’umuyoboro wa grafiti (SiO2 + 2C → SiC2 + CO2), ikuraho isuri n’umukungugu wa karuboni.
• Ubuziranenge bwa jeometrike:Igumana imiterere nyayo y'ubushyuhe mu gihe cy'amasaha 30% y'igihe kirekire.

Amakuru y'imikorere yapimwe n'igenzura ry'igerageza ry'aho utuye

Igerageza ryo kugereranya ingano y'ibikoresho bya CZ ryamaze amezi 6 ryakozwe mu itanura rya CZ rya santimetero 32 mu ruganda rukora silicon wafer rwa TOPCon rwo mu cyiciro cya 1. Hasi aha hari igipimo cy'imikorere kigereranya ibice bisanzwe bya grafiti ugereranije n'igisubizo cya VeTek Semiconductor cyo mu murima w'ubushyuhe cyatunganyijwe:

Ibibazo Bikunze Kubazwa (Ibibazo Bikunze Kubazwa)

Umwanzuro n'Ubujyanama mu bya Tekiniki

Kuvugurura ibice bya grafiti ya isostatic yasukuwe cyane hamwe n’uburinzi bwa CVD SiC bitanga inzira itaziguye kandi ipimwa yo gukemura ibibazo by’umusaruro n’umwanda mu mikurire ya silikoni ya monocrystalline ya santimetero 32. Hamwe n’izamuka rya 18% mu musaruro w’ibanze n’igihe kirekire cyo kumara igihe kirekire cy’ubushyuhe, abakora wafer y’izuba bashobora kugera ku nyungu nini.