Ingorane za tekiniki mu gukora neza cyane ibyuma bya silikoni bya karubide bikozwe mu buryo buhamye kandi bitanga umusaruro uhamye zirimo:
1) Kubera ko kristu zigomba gukura ahantu hafite ubushyuhe bwinshi buri hejuru ya 2000°C, ibisabwa mu kugenzura ubushyuhe biri hejuru cyane;
2) Kubera ko karubide ya silikoni ifite imiterere irenga 200 ya kristu, ariko imiterere mike ya karubide ya silikoni imwe ni yo ikenewe mu bikoresho bya semiconductor, igipimo cya silicon-to-carbon, ubushyuhe bw'ikura, n'ikura rya kristu bigomba kugenzurwa neza mu gihe cy'ikura rya kristu. Ibipimo nk'umuvuduko n'umuvuduko w'umwuka;
3) Mu buryo bwo kohereza umwuka mu cyiciro cy'umwuka, ikoranabuhanga ryo kwagura uburebure bw'umurambararo w'ikura rya kristale ya silikoni karuboni riragoye cyane;
4) Ubukomere bwa silicon carbide buri hafi y’ubwa diyama, kandi uburyo bwo gukata, gusya no gusiga irangi buragoye.
Udupira twa SiC epitaxial: ubusanzwe dukorwa hakoreshejwe uburyo bwa chemical vapor deposition (CVD). Dukurikije ubwoko butandukanye bwa doping, tugabanyijemo utupira twa n-type na p-type epitaxial. Hantian Tiancheng yo mu rugo na Dongguan Tianyu bashobora gutanga utupira twa SiC epitaxial twa santimetero 4/6. Kuri SiC epitaxy, biragoye kugenzura mu rwego rwo hejuru rw'amashanyarazi, kandi ubwiza bwa SiC epitaxy bugira ingaruka zikomeye ku bikoresho bya SiC. Byongeye kandi, ibikoresho bya epitaxial byigarurirwa n'ibigo bine bikomeye mu nganda: Axitron, LPE, TEL na Nuflare.
Epitaxial ya silicon carbideWafer yerekeza ku icupa rya silicon carbide aho agace kamwe ka kristu (urwego rwa epitaxial) gafite ibisabwa bimwe na bimwe kandi kimwe na kristu ya substrate gahingwa kuri substrate ya silicon carbide ya mbere. Iterambere rya Epitaxial rikoresha cyane cyane ibikoresho bya CVD (Chemical Vapor Deposition, ) cyangwa ibikoresho bya MBE (Molecular Beam Epitaxy). Kubera ko ibikoresho bya silicon carbide bikorerwa mu rwego rwa epitaxial, ubwiza bw'urwego rwa epitaxial bugira ingaruka zitaziguye ku mikorere n'umusaruro w'igikoresho. Uko voltage yihanganira imikorere y'igikoresho ikomeza kwiyongera, ubugari bw'urwego rwa epitaxial rujyanye nacyo burushaho kuba bwinshi kandi kugenzura bikagorana. Muri rusange, iyo voltage iri hafi 600V, ubugari bw'urwego rwa epitaxial bukenewe ni hafi mikoroni 6; iyo voltage iri hagati ya 1200-1700V, ubugari bw'urwego rwa epitaxial bukenewe bugera kuri mikoroni 10-15. Iyo voltage igeze kuri volti zirenga 10.000, ubugari bw'urwego rwa epitaxial burenze mikoroni 100 bushobora gukenerwa. Uko ubunini bw'urwego rwa epitaxial bukomeza kwiyongera, ni ko bigenda bigorana kugenzura ubunini n'ubudahangarwa bw'ingufu hamwe n'ubucucike bw'ibinure.
Ibikoresho bya SiC: Ku rwego mpuzamahanga, SiC SBD na MOSFET bifite imbaraga za 600 ~ 1700V byashyizwe mu nganda. Ibikoresho bikuru bikora ku rugero rw'amashanyarazi ruri munsi ya 1200V kandi ahanini bikoresha uburyo bwo gupakira bwa TO. Ku bijyanye n'ibiciro, ibicuruzwa bya SiC ku isoko mpuzamahanga bifite agaciro kari hejuru y'inshuro 5-6 ugereranije na Si. Ariko, ibiciro biri kugabanuka ku gipimo cya 10% buri mwaka hamwe no kwiyongera kw'ibikoresho byo mu nganda no gukora ibikoresho mu myaka 2-3 iri imbere, isoko riziyongera, bigatuma ibiciro bigabanuka cyane. Biteganijwe ko igihe igiciro kizagera ku nshuro 2-3 z'ibicuruzwa bya Si, inyungu zizanwa no kugabanuka kw'ibiciro bya sisitemu no kunoza imikorere bizatera SiC gufata umwanya w'isoko ry'ibikoresho bya Si.
Gupakira bisanzwe bishingiye ku bikoresho bya silikoni, mu gihe ibikoresho bya semiconductor byo mu gisekuru cya gatatu bisaba imiterere mishya rwose. Gukoresha imiterere gakondo yo gupakira bishingiye kuri silikoni ku bikoresho by'amashanyarazi bifite umupaka munini bishobora guteza ibibazo bishya n'imbogamizi zijyanye n'inshuro, imicungire y'ubushyuhe, no kwizerwa. Ibikoresho by'amashanyarazi bya SiC birushaho kwihuta mu gukoresha ubushobozi bwa parasitiki no mu miyoboro. Ugereranyije n'ibikoresho bya Si, utumashini twa SiC dufite umuvuduko wihuta wo guhinduranya, bishobora gutera gushyuha cyane, kuzunguruka, gutakaza ingufu, ndetse no kudakora neza kw'ibikoresho. Byongeye kandi, ibikoresho by'amashanyarazi bya SiC bikora ku bushyuhe bwinshi, bisaba ubuhanga buhanitse bwo gucunga ubushyuhe.
Hakozwe imiterere itandukanye itandukanye mu rwego rwo gupakira amashanyarazi ya semiconductor yagutse. Gupakira amashanyarazi ya Si-based power module gakondo ntibikibereye. Kugira ngo bikemure ibibazo by’ibipimo byinshi bya parasitiki no kudakoresha ubushyuhe neza mu gupakira amashanyarazi ya Si-based power module gakondo, gupakira amashanyarazi ya SiC power module bikoresha ikoranabuhanga ryo guhuza insinga n’ubukonje bw’uruhande rubiri mu miterere yabyo, kandi binakoresha ibikoresho bya substrate bifite amashanyarazi meza, kandi bigerageza guhuza capacitors zo gukuraho, sensors z’ubushyuhe/amashanyarazi, na drive circuits mu miterere ya module, kandi biteza imbere ikoranabuhanga ritandukanye ryo gupakira module. Byongeye kandi, hari imbogamizi nyinshi mu gukora ibikoresho bya SiC kandi ibiciro byo gukora ni byinshi.
Ibikoresho bya karubide ya silikoni bikorwa binyuze mu gushyira ibice bya epitaxial kuri substrate ya karubide ya silikoni binyuze muri CVD. Iyi gahunda ikubiyemo gusukura, oxidation, photolithography, gukata, gukuraho photoresist, gushyiramo iyoni, gushyiramo umwuka wa silicon nitride mu buryo bwa chemical, gusiga irangi, gusukamo amazi, no gutunganya nyuma kugira ngo habeho imiterere y'igikoresho kuri substrate ya SiC single crystal. Ubwoko bw'ingenzi bw'ibikoresho by'ingufu za SiC burimo diode za SiC, transistors za SiC, na modules z'ingufu za SiC. Bitewe n'ibintu nko gutinda gukora ibikoresho no gutanga umusaruro muke, ibikoresho bya karubide ya silikoni bifite ikiguzi kinini cyo gukora.
Byongeye kandi, gukora ibikoresho bya silicon carbide bifite ingorane zimwe na zimwe mu bya tekiniki:
1) Ni ngombwa guteza imbere inzira yihariye ijyanye n'imiterere y'ibikoresho bya silicon carbide. Urugero: SiC ifite aho ishongesha cyane, bigatuma ubushyuhe busanzwe bukwirakwira neza. Ni ngombwa gukoresha uburyo bwo gushyiramo iron mu nganda no kugenzura neza ibipimo nk'ubushyuhe, umuvuduko wo gushyushya, igihe, n'umuvuduko wa gaze; SiC ntishobora gukoresha imiti ihumanya. Uburyo nk'ubushyuhe bwumye bugomba gukoreshwa, kandi ibikoresho byo gupfuka, imvange ya gaze, kugenzura imiterere y'urukuta, umuvuduko wo gupfuka, ubukana bw'urukuta, nibindi bigomba kunozwa no gutezwa imbere;
2) Gukora electrode z'icyuma kuri wafer za silicon carbide bisaba ubushobozi bwo guhangana n'ibintu biri munsi ya 10-5Ω2. Ibikoresho bya electrode byujuje ibisabwa, Ni na Al, bifite ubushobozi bwo guhangana n'ibintu biri hejuru ya 100°C, ariko Al/Ni ifite ubushobozi bwo guhangana n'ibintu biri hejuru y'ubushyuhe. Ubushobozi bwo guhangana n'ibintu biri hagati ya /W/Au ni 10-3Ω2;
3) SiC irashaje cyane, kandi ubukana bwa SiC ni ubwa kabiri nyuma ya diyama, ibyo bikaba bitanga ibisabwa byinshi mu gukata, gusya, gusiga irangi n'izindi koranabuhanga.
Byongeye kandi, ibikoresho by'amashanyarazi bya trench silicon carbide biragoye gukora. Dukurikije imiterere itandukanye y'ibikoresho, ibikoresho by'amashanyarazi bya silicon carbide bishobora kugabanywamo ahanini ibikoresho bya planar n'ibikoresho bya trench. Ibikoresho by'amashanyarazi bya planar silicon carbide bifite imiterere myiza y'ibice n'uburyo bworoshye bwo gukora, ariko bishobora kugira ingaruka za JFET kandi bifite ubushobozi bwinshi bwo gukurura parasite no kudakora neza. Ugereranyije n'ibikoresho bya planar, ibikoresho by'amashanyarazi bya trench silicon carbide bifite imiterere mike kandi bifite uburyo bugoye bwo gukora. Ariko, imiterere y'ibice by'amashanyarazi ifasha kongera ubucucike bw'ibikoresho kandi ntabwo ishobora gutanga ingaruka za JFET, ibyo bikaba ingirakamaro mu gukemura ikibazo cyo kugenda kw'imiyoboro. Ifite imiterere myiza nko kudakora neza, ubushobozi buke bwo gukurura parasite, no gukoresha ingufu nke. Ifite inyungu zikomeye ku giciro n'imikorere kandi yabaye icyerekezo nyamukuru cy'iterambere ry'ibikoresho by'amashanyarazi bya silicon carbide. Nk’uko urubuga rwa Rohm rubivuga, imiterere ya ROHM Gen3 (imiterere ya Gen1 Trench) ni 75% gusa by’ubuso bwa chip ya Gen2 (Plannar2), kandi ubushobozi bwo kudakora neza bwa chip ya ROHM Gen3 bugabanukaho 50% munsi y’ingano imwe ya chip.
Amafaranga ya silicon carbide substrate, epitaxy, front-end, ubushakashatsi n'iterambere n'ibindi bigira 47%, 23%, 19%, 6% na 5% by'ikiguzi cyo gukora ibikoresho bya silicon carbide.
Amaherezo, tuzibanda ku gusenya inzitizi za tekiniki z'ibice biri mu ruhererekane rw'inganda za silicon carbide.
Uburyo bwo gukora substrates za silicon carbide busa n'ubw'substrates zishingiye kuri silicon, ariko burushaho kugorana.
Uburyo bwo gukora substrate ya silicon carbide muri rusange burimo gukora ibikoresho fatizo, gukura kwa kristu, gutunganya ingot, gukata ingot, gusya wafer, gusiga irangi, gusukura n'ibindi bifitanye isano.
Icyiciro cyo gukura kwa kristu ni cyo kintu nyamukuru cy’igikorwa cyose, kandi iyi ntambwe igena imiterere y’amashanyarazi ya silicon carbide substrate.
Ibikoresho bya silicon carbide biragoye gukura mu gihe cy’amazi mu bihe bisanzwe. Uburyo bwo gukura mu gihe cy’umwuka buzwi cyane ku isoko muri iki gihe bufite ubushyuhe buri hejuru ya 2300°C kandi busaba kugenzura neza ubushyuhe bw’ikura. Uburyo bwose bwo gukora bugoye kubona. Ikosa rito rizatuma ibicuruzwa bikurwaho. Ugereranije, ibikoresho bya silicone bisaba gusa 1600°C, ari na byo biri hasi cyane. Gutegura substrates za silicon carbide bihura n’ingorane nko gukura buhoro buhoro kwa kristu no gukenera kristu nyinshi. Gukura kwa silicon carbide wafer bifata iminsi 7 kugeza ku 10, mu gihe gukura kwa silicone bifata iminsi 2 n’igice gusa. Byongeye kandi, silicon carbide ni ibikoresho bifite ubukana bwa kabiri nyuma ya diyama. Bizatakaza byinshi mu gihe cyo gukata, gusya no gusya, kandi igipimo cy’umusaruro ni 60% gusa.
Tuzi ko intego ari ukongera ingano ya silicon carbide substrates, uko ingano ikomeza kwiyongera, ibisabwa kugira ngo ikoranabuhanga ryo kwagura umurambararo rirusheho kwiyongera. Bisaba guhuza ibintu bitandukanye byo kugenzura tekiniki kugira ngo kristu zigere ku mikurire isubiramo.
Igihe cyo kohereza: Gicurasi-22-2024