2. Kukura kwefirimu rakatetepa reEpitaxial
Substrate iyi inopa rutsigiro rwemuviri kana kuti conductive layer yeGa2O3 power devices. Danho rinotevera rinokosha i channel layer kana epitaxial layer inoshandiswa kudzivirira voltage uye carrier transport. Kuti kuwedzera breakdown voltage uye kuderedza conduction resistance, controllable thickness uye doping concentration, pamwe nepamusoro-soro material quality, zvimwe zvinodiwa. Ga2O3 epitaxial layers dzemhando yepamusoro dzinowanzoiswa uchishandisa molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), halide vapor deposition (HVPE), pulsed laser deposition (PLD), uye fog CVD based deposition techniques.
Tafura 2 Mamwe matekinoroji epitaxial anomiririra
2.1 Nzira yeMBE
Tekinoroji yeMBE inozivikanwa nekukwanisa kwayo kukura mafirimu eβ-Ga2O3 emhando yepamusoro, asina zvirema ane doping inodzorwa yemhando yen-type nekuda kwenzvimbo yayo ye vacuum yakakwira zvakanyanya uye kuchena kwezvinhu zvakawanda. Nekuda kweizvozvo, yave imwe yetekinoroji dzinonyanya kudzidzwa uye dzinogona kutengeswa dzeβ-Ga2O3 thin film deposition. Pamusoro pezvo, nzira yeMBE yakagadzirawo zvakabudirira heterostructure yepamusoro, ine doped low-doped heterostructure β-(AlXGa1-X)2O3/Ga2O3 thin film layer. MBE inogona kutarisa chimiro chepamusoro uye morphology munguva chaiyo neatomic layer precision nekushandisa reflection high energy electron diffraction (RHEED). Zvisinei, mafirimu eβ-Ga2O3 akakurira achishandisa tekinoroji yeMBE achiri kusangana nematambudziko mazhinji, akadai sekukura kwakaderera uye saizi diki yefirimu. Chidzidzo ichi chakawana kuti kukura kwacho kwaive muhurongwa hwe (010)>(001)>(−201)>(100). Mumamiriro ezvinhu ane Ga-rich zvishoma e650 kusvika 750°C, β-Ga2O3 (010) inoratidza kukura kwakanaka nepamusoro pakanaka uye mwero wekukura wakakwira. Uchishandisa nzira iyi, β-Ga2O3 epitaxy yakabudirira kubudirira neRMS roughness ye0.1 nm. β-Ga2O3 Munzvimbo ine Ga-rich, mafirimu eMBE akarimwa patembiricha dzakasiyana anoratidzwa mumufananidzo. Novel Crystal Technology Inc. yakabudirira kugadzira mawafer e10 × 15mm2 β-Ga2O3MBE. Anopa ma β-Ga2O3 single crystal substrates emhando yepamusoro (010) ane ukobvu hwe500 μm uye XRD FWHM pasi pe150 arc seconds. Substrate yacho yakatorwa neSn doped kana Fe doped. Substrate inotungamirwa neSn-doped ine doping concentration ye1E18 kusvika 9E18cm−3, nepo substrate inotungamirwa nesimbi ine semi-insulating substrate ine resistivity yakakwira kupfuura 10E10 Ω cm.
2.2 Nzira yeMOCVD
MOCVD inoshandisa simbi organic compounds sezvinhu zvinotangira kukura mafirimi matete, nokudaro zvichiita kuti pave nekugadzirwa kukuru kwekutengeserana. Pakurima Ga2O3 uchishandisa nzira yeMOCVD, trimethylgallium (TMGa), triethylgallium (TEGa) uye Ga (dipentyl glycol formate) zvinowanzo shandiswa senzvimbo yeGa, nepo H2O, O2 kana N2O zvichishandiswa senzvimbo yeoxygen. Kukura uchishandisa nzira iyi kunowanzo da tembiricha yepamusoro (>800°C). Iyi tekinoroji ine mukana wekuwana huwandu hwakaderera hwekutakura uye kufamba kwemaerekitironi patembiricha yepamusoro uye yakaderera, saka inokosha zvikuru pakuzadzikiswa kwemidziyo yemagetsi yeβ-Ga2O3 inoshanda zvakanyanya. Kana ichienzaniswa nenzira yekukura yeMBE, MOCVD ine mukana wekuwana mwero wekukura kwakanyanya kwemafirimu eβ-Ga2O3 nekuda kwehunhu hwekukura kwetembiricha yepamusoro uye maitiro emakemikari.
Mufananidzo 7 β-Ga2O3 (010) AFM mufananidzo
Mufananidzo 8 β-Ga2O3 Hukama huripo pakati peμ uye kuramba kwepepa kunoyerwa neHall netembiricha
2.3 Nzira yeHVPE
HVPE itekinoroji ye epitaxial yakakura uye yakashandiswa zvakanyanya mukukura kwe epitaxial kwe III-V compound semiconductors. HVPE inozivikanwa nemutengo wayo wakaderera wekugadzira, kukurumidza kukura, uye ukobvu hwefirimu. Zvinofanira kucherechedzwa kuti HVPEβ-Ga2O3 inowanzo ratidza chimiro chepamusoro chakakombama uye kuwanda kwakanyanya kwezvikanganiso zvepanzvimbo nemakomba. Nokudaro, maitiro ekugadzira makemikari nemechanical anodiwa usati wagadzira mudziyo. Tekinoroji yeHVPE ye β-Ga2O3 epitaxy inowanzo shandisa gasi GaCl neO2 senzira dzekusimudzira kupisa kwakanyanya kwe (001) β-Ga2O3 matrix. Mufananidzo 9 unoratidza mamiriro epamusoro uye mwero wekukura kwefirimu ye epitaxial sekushandiswa kwekupisa. Mumakore achangopfuura, Novel Crystal Technology Inc. yeJapan yakawana kubudirira kukuru muHVPE homoepitaxial β-Ga2O3, ine ukobvu hwe epitaxial layer hwe 5 kusvika 10 μm uye saizi dzewafer dze 2 ne 4 inches. Pamusoro pezvo, mawafer eHVPE β-Ga2O3 ane ukobvu hwe20 μm akagadzirwa neChina Electronics Technology Group Corporation apindawo padanho rekutengeserana.
Mufananidzo 9 Nzira yeHVPE β-Ga2O3
2.4 Nzira yePLD
Tekinoroji yePLD inonyanya kushandiswa kuisa mafirimu akaomarara eoxide uye heterostructures. Munguva yekukura kwePLD, simba rephoton rinosanganiswa nezvinhu zvinonangwa kuburikidza nemaitiro ekubudisa maerekitironi. Kusiyana neMBE, zvidimbu zvePLD zvinoumbwa nemwaranzi yelaser ine simba rakawanda kwazvo (>100 eV) uye zvinobva zvaiswa pane substrate inopisa. Zvisinei, panguva yekubvisa, zvimwe zvidimbu zvine simba rakawanda zvinokanganisa zvakananga pamusoro pechinhu, zvichigadzira zvikanganiso zvepoindi uye nokudaro zvichideredza kunaka kwefirimu. Kufanana nenzira yeMBE, RHEED inogona kushandiswa kutarisa chimiro chepamusoro uye morphology yezvinhu munguva chaiyo panguva yekuisa PLD β-Ga2O3, zvichibvumira vaongorori kuwana ruzivo rwekukura nemazvo. Nzira yePLD inotarisirwa kukura mafirimu eβ-Ga2O3 anofambisa zvakanyanya, zvichiita kuti ive mhinduro yakagadziriswa ye ohmic contact mumidziyo yemagetsi yeGa2O3.
Mufananidzo 10 weAFM mufananidzo weSi doped Ga2O3
2.5 Nzira yeMIST-CVD
MIST-CVD inyanzvi iri nyore uye inodhura zvishoma yekukura kwefirimu diki. Iyi nzira yeCVD inosanganisira kupfapfaidza chinhu chinotanga kupfapfaidza pachigadziko kuti chiwane firimu diki. Zvisinei, kusvika pari zvino, Ga2O3 inorimwa uchishandisa mist CVD ichiri kushaya simba rakanaka remagetsi, izvo zvinosiya nzvimbo yakawanda yekuvandudza nekugadzirisa mune ramangwana.
Nguva yekutumira: Chivabvu-30-2024