I-MOCVD Substrate Heater, Izinto zokufudumeza ze-MOCVD

Isifudumezi se-MOCVD Substrate, Izinto zokufudumeza ze-MOCVD Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-Chemical Graphite

Inzuzo: Ukumelana nobushushu obuphezulu

Isicelo: MOCVD/Vacuum furnace/Hot Zone

Ubuninzi Ubuninzi: 1.68-1.91g/cm3

Amandla okugoba: 30-46Mpa

Ukumelana: 7-12μΩm

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-MOCVD Substrate Heater, Izinto zokufudumeza ze-MOCVD,
isifudumezi segrafayithi, I-Graphite Semiconductor, isifudumezi, I-MOCVD Substrate Heater,

I-MOCVD Substrate Heater, Izinto zokufudumeza ze-MOCVD

Igrafayithiisifudumezi:
Iisifudumezi segrafayithiIzixhobo zisetyenziswa kwi-oven enobushushu obuphezulu apho ubushushu bufikelela kwi-2200 degrees kwindawo yokucoca umoya kunye ne-3000 degrees kwindawo yegesi ecocekileyo nefakwe kuyo.
Iimpawu eziphambili zeisifudumezi segrafayithi:
1. ukufana kwesakhiwo sokufudumeza.
2. Ukuqhuba kakuhle kombane kunye nomthwalo ophezulu wombane.
3. ukumelana nokugqwala.
4. ukungakwazi ukufunxa ioksijini.
5. ubunyulu obuphezulu beekhemikhali.
6. amandla aphezulu oomatshini.
Inzuzo kukuba iyasebenza kakuhle, ixabiso layo liphezulu kwaye ayilungiswa kakhulu.
Singavelisa i-anti-oxidation kunye ne-graphite crucible ehlala ixesha elide, i-graphite mold kunye nazo zonke iindawo ze-graphiteisifudumezi.
Iiparameter eziphambili ze-graphite heater:

Iinkcukacha zoBugcisa	I-VET-M3
Ubuninzi bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina koLwandle	≥45
Ukuchasana Okuthile (μ.Ω.m)	≤12
Amandla okuGuquka (i-Mpa)	≥40
Amandla Oxinzelelo (i-Mpa)	≥70
Ubungakanani obukhulu bengqolowa (μm)	≤43
I-Coefficient yokwandisa ubushushu Mm/°C	≤4.4*10-6

Isifudumezi segrafiti kwisithando sombane sineempawu zokuxhathisa ubushushu, ukumelana neoksijini, ukuqhuba kakuhle kombane kunye nokuqina okungcono koomatshini. Singasebenzisa iintlobo ezahlukeneyo zesifudumezi segrafiti ngokweedizayini zabathengi.