I-MOCVD Substrate Heater, Izinto Zokushisa ze-MOCVD

Isifudumezi se-MOCVD Substrate, Izinto Zokushisa ze-MOCVD Isithombe Esivelele

Incazelo emfushane:

I-Chemical Graphite

Inzuzo: Ukumelana nokushisa okuphezulu

Isicelo: MOCVD/Vacuum furnace/Hot Zone

Ubuningi Bobuningi: 1.68-1.91g/cm3

Amandla okugobeka: 30-46Mpa

Ukumelana: 7-12μΩm

Sithumelele i-imeyili Landa njenge-PDF

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

I-MOCVD Substrate Heater, Izinto Zokushisa ze-MOCVD,
isifudumezi se-graphite, I-Graphite Semiconductor, i-heater, I-MOCVD Substrate Heater,

I-MOCVD Substrate Heater, Izinto Zokushisa ze-MOCVD

I-Graphitei-heater:
Iisifudumezi se-graphiteIzingxenye zisetshenziswa esithandweni sokushisa okuphezulu lapho izinga lokushisa lifinyelela kuma-degree angu-2200 endaweni yokuhlanza kanye nama-degree angu-3000 endaweni yegesi ekhishwe i-oxidized nefakiwe.
Izici eziyinhloko zeisifudumezi se-graphite:
1. ukufana kwesakhiwo sokushisa.
2. ugesi omuhle kanye nomthwalo omkhulu kagesi.
3. ukumelana nokugqwala.
4. ukungashisi.
5. ubumsulwa obuphezulu bamakhemikhali.
6. amandla aphezulu omshini.
Inzuzo ukuthi igcina ugesi ngendlela efanele, inenani eliphezulu kanye nokugcinwa kwayo kuphansi.
Singakhiqiza i-anti-oxidation kanye nokuphila isikhathi eside i-graphite crucible, isikhunta se-graphite nazo zonke izingxenye ze-graphitei-heater.
Amapharamitha ayinhloko we-graphite heater:

Ukucaciswa Kobuchwepheshe	I-VET-M3
Ubuningi (g/cm3)	≥1.85
Okuqukethwe Komlotha (PPM)	≤500
Ukuqina Kogu	≥45
Ukumelana Okuqondile (μ.Ω.m)	≤12
Amandla Okugobeka (i-Mpa)	≥40
Amandla Okucindezela (i-Mpa)	≥70
Usayizi Ophezulu Wokusanhlamvu (μm)	≤43
I-Coefficient Yokwanda Kokushisa Mm/°C	≤4.4*10-6

Isifudumezi se-graphite sesithando sikagesi sinezimpawu zokumelana nokushisa, ukumelana nokushiswa kwe-oxidation, ukuhanjiswa kukagesi okuhle kanye namandla angcono omshini. Singakwazi ukushisisa izinhlobo ezahlukene zesifudumezi se-graphite ngokwemiklamo yamakhasimende.