Njengoko ukwenziwa kwee-semiconductor kutshintsha ukuya kwi-geometries zezixhobo ezincinci, i-wafer throughput ephezulu, kunye nemigangatho yokulawula ukungcola engqongqo ngakumbi, izixhobo zokucubungula ubushushu zijongene nemingeni yobunjineli engakaze ibonwe ngaphambili. Iinkqubo ezifana ne-LPCVD, i-thermal oxidation, i-dopant diffusion, kunye ne-high-temperature annealing ngoku azifuni nje kuphela ukulingana kobushushu obuqinileyo, kodwa kunye nexesha elide lokusebenza kwezixhobo, ukuveliswa kwamasuntswana aphantsi, kunye nokuphuculwa kokuphindaphinda kwenkqubo.
Nangona idla ngokunganakwa xa ithelekiswa neegesi zenkqubo, iityhubhu ze-furnace, okanye iikhemistri zokubeka, i-cantilever paddle imisela ngokusisiseko indlela ii-wafers eziziphatha ngayo kwiindawo ezinobushushu obuphezulu. Kwii-fabs ezininzi eziphambili, ayisathathwa njengesixhobo esilula esinokusetyenziswa, kodwa ithathwa njengesixhobo esibalulekileyo esivumela ukucutshungulwa kwe-semiconductor okuzinzileyo nokuphindaphindwayo.
Yintoni iSiC Cantilever Paddle?
I-SiC Cantilever Paddle yinxalenye yesakhiwo se-silicon carbide ecocekileyo kakhulu esetyenziswa kakhulu kwii-ovens ze-semiconductor diffusion kunye neenkqubo ze-LPCVD. Ngokwesiqhelo yenzelwe njengesakhiwo eside se-cantilever beam esikwaziyo ukuxhasa ii-quartz okanye ii-SiC wafer boats ngexesha lokucubungula ubushushu obuphezulu.
Eli candelo lenziwa ngokubanzi kusetyenziswa:
● i-silicon carbide ephinde yasetyenziswa (RSiC)
● i-silicon carbide efakwe kwi-chemical vapor (CVD SiC)
● izixhobo zeSiC ezidityaniswe noxinzelelo oluphezulu
Ngokwedatha yezinto ezipapashwe yiCoorsTek kunye neSaint-Gobain Performance Ceramics, izinto zeSiC ezicocekileyo kakhulu zihlala zibonisa:
● Ukuqhuba kobushushu: malunga ne-120–200 W/m·K kubushushu begumbi
● Ubushushu obuphezulu bokusebenza kwi-atmosphere engasebenziyo: ngaphezulu kwe-1600°C.
● I-coefficient yokwandiswa kobushushu (CTE): malunga ne-4.0–4.5×10⁻⁶/K.
● Ukumelana kakuhle ne-HCl, i-NH₃, i-O₂, kunye ne-chlorine process chemistry.
Indima yeSiC Cantilever Paddle kwi-LPCVD Processing
Kuzo zonke izicelo, iinkqubo ze-LPCVD zimele enye yezona meko zibalulekileyo zokusetyenziswa kwi-SiC Cantilever Paddles.
Iinkqubo ezifana nezi:
● ukubekwa kwe-polysilicon.
● i-silicon nitride (Si₃N₄).
● Ukufakwa kwe-oxide ephantsi koxinzelelo.
Ngokwesiqhelo isebenza phakathi kwama-500°C nama-900°C, idla ngokuba phantsi kwemijikelo yenkqubo ende kunye neendawo zeekhemikhali ezisabela kakhulu.
Ngaphakathi kwezi nkqubo, i-cantilever paddle yenza imisebenzi emininzi ebalulekileyo ngaxeshanye.
Okokuqala, ibonelela ngothutho oluzinzileyo lwezixhobo zokuthutha iinqanawa ze-wafer ezingena neziphuma kwityhubhu yesithando somlilo. Ngenxa yokuba izithando zanamhlanje ezithe nkqo zinokuthwala amakhulu ezixhobo zokuthutha ii-wafer ngebhetshi nganye, nokuba kukutshintshatshintsha okuncinci kwe-paddle kunokukhokelela ekungalungelelaniseni kwezixhobo zokuthutha ii-wafer, isithuba esingazinzanga, okanye ukuqokelelana koxinzelelo lwezixhobo zokuthutha ii-wafer.
Okwesibini, i-paddle idlala indima ebalulekileyo ekulinganeni kobushushu. Ukuqhuba okuphezulu kobushushu beSiC kuvumela ubushushu ukuba busasazeke ngokulinganayo kwisakhiwo senkxaso, kunciphisa i-gradients yobushushu yendawo enokuchaphazela ukufana kokubekwa.
Okwesithathu, ukuveliswa kweesuntswana eziphantsi kubaluleke kakhulu. Iisuntswana ze-semiconductor zibulala ngokuthe ngqo isivuno, ingakumbi kwi-logic ephucukileyo kunye nemveliso ye-semiconductor yamandla. Ngenxa yesakhiwo sayo esixineneyo se-ceramic kunye nokumelana nokugqwala okunamandla, i-SiC ecocekileyo kakhulu inciphisa kakhulu umngcipheko wokuchitheka kweesuntswana xa kuthelekiswa nezixhobo zemveli.
Kwimigca yemveliso ye-LPCVD ephucukileyo, uzinzo lwexesha elide lwe-paddle luchaphazela ngokuthe ngqo:
● ukufana kobukhulu befilimu.
● ukuphindaphindwa kwe-wafer ukuya kwi-wafer.
● ixesha lokusebenza kwesithando somlilo.
I-Ningbo VET Energy igxile kwi-graphite ephucukileyo, ii-silicon carbide ceramics, kunye nezixhobo ze-semiconductor ezigqunywe yi-CVD ezenzelwe iimeko zokuvelisa ze-semiconductor ezifuna amandla.
Iimveliso zeCore semiconductor ziquka:
● Isikhephe seSiC Cantilever
● I-SiC Coated Graphite Susceptor
● Umthwali weWafer ogqunywe yiSiC
● Izixhobo zeSiC ezigqunywe yiHalfmoon
● Izinto ezidityanisiweyo zeCarbon-Carbon
● I-Soft Graphite Felt kunye ne-Rigid Graphite Felt
Ezi mveliso zisetyenziswa kakhulu kwezi:
● Iinkqubo ze-Epitaxy
● Iireactor ze-LPCVD
● Iifutha zokusasaza
● Iinkqubo zokukhula kwekristale yeSiC
● Izixhobo zokucubungula ubushushu obuphezulu.
Ngenxa yokukhula ngokukhawuleza kweSiC kunye nokuveliswa kwe-semiconductor yamandla aphambili, imfuno yezinto ze-furnace ezicocekileyo kakhulu nezizinzileyo iya kuqhubeka isanda. Kule meko, itekhnoloji yeSiC Cantilever Paddle iya kuhlala iyenye yezinto ezisisiseko ezixhasa ukucutshungulwa kwe-semiconductor yesizukulwana esilandelayo.
Ixesha leposi: Meyi-14-2026