Izisombululo zeHeater zeGraphite eziPhucukileyo zeSemiconductor Epitaxy

Kwiinkqubo ze-semiconductor zobushushu obuphezulu ezifana ne-MOCVD (i-Metal-Organic Chemical Vapor Deposition) kunye nokukhula kwe-SiC epitaxial, ulawulo lwentsimi yobushushu lumisela ngokuthe ngqo ukufana kobukhulu befilimu, uxinzelelo lwe-doping, kunye ne-ultimate wafer yield. Njengenxalenye yentsimi yobushushu eyintloko, i-Isifudumezi seGraphite esicocekileyo kakhulukufuneka isebenze ngokuzinzileyo nangokuqhubekayo phantsi kobushushu obugqithisileyo obungaphezulu kwe-1600°C ngaphakathi kweemeko zegesi ezirhabaxa kakhulu. Ngokudibanisa izifundo zokusetyenziswa komthengi zokwenyani nolwazi olubalulekileyo lwemveliso, eli nqaku libonelela ngohlalutyo olunzulu lweenzuzo zobugcisa, uyilo lwesakhiwo, kunye nendima ebalulekileyo ye-high-purity graphite heaters ekwenzeni i-semiconductor wafer.

Kutheni Ukhetha iHeater yeGraphite ecocekileyo kakhulu kwiiNkqubo zeMOCVD?

Kwiinkqubo ezibalulekileyo ezifana ne-MOCVD kunye ne-GaN/SiC epitaxy, nokuba ukuguquguquka kobushushu obuncinci (>2°C) kunokukhokelela ekutshintsheni kwe-wavelength okanye iziphene zekristale kumaleko we-epitaxial. Ukusebenzisa i-thermal conductivity ephezulu (100–150 W/m·K) kunye ne-coefficient ephantsi kakhulu yokwandiswa kobushushu (CTE), izixhobo ze-graphite ezicocekileyo kakhulu ziqhuba ubushushu ngokutyibilikayo nangokukhawuleza kulo lonke i-susceptor kunye nomphezulu we-wafer.

Ukufana kweNdawo yoBushushu kunye noLawulo lweMimandla emininzi

Ukuze kuliwe nokulahlekelwa yimitha yobushushu emaphethelweni egumbi le-epitaxy, izifudumezi zegrafiti ezicocekileyo kakhulu zihlala zifaka uyilo lolawulo lobushushu oluzimeleyo oluneendawo ezininzi. Ngokusebenzisa uhlengahlengiso oluchanekileyo lokwahlulahlula ubushushu, iinjineli zihlengahlengisa iindawo ezinqamlezileyo zesekethe kunye nokumelana nombane ngokweempawu zokulahleka kobushushu kwintsimi yokuhamba kwegumbi. Oku kugcina umahluko wentsimi yobushushu kuyo yonke indawo yokukhula kwe-wafer ngaphakathi kwe-±1°C, okuqinisekisa ukuhambelana kombane kuzo zonke ii-wafers kwidiski.

Ulawulo loMxholo woMlotha kunye noQinisekiso lweNdalo oluNgcwele kakhulu

Iinkqubo ze-epitaxy ze-semiconductor zinobuthathaka kakhulu kukungcola kwesinyithi. I-graphite yemizi-mveliso eqhelekileyo iqulethe izinto zesinyithi ezincinci ezifana ne-iron (Fe), i-nickel (Ni), kunye ne-copper (Cu), ezitshintsha ngokulula kwaye zisasazeke kumaleko we-epitaxial kumaqondo obushushu aphezulu, nto leyo ebeka emngciphekweni i-voltage yokuqhekeka kwesixhobo kunye nokuhamba kokuthwala. Izifudumezi ze-graphite ezicocekileyo kakhulu ziphantsi kweenkqubo zokucoca i-chlorination kumaqondo obushushu aphezulu, zinciphisa umxholo womlotha uwonke ube ngaphantsi kwe-5 ppm (nangaphantsi kwe-2 ppm kwi-high-end semiconductor grade), zithintela ukungcoliswa kwee-wafers ze-epitaxial ezivela kukungcola kwentsimi yobushushu emthonjeni.

Izinto eziPhambili zokuFudumeza iGraphite kwiSemiconductor Wafer Processing

Izinto zokufudumeza ze-semiconductor zihlala zifudumeza kwaye zipholile ngokukhawuleza ukusuka kubushushu begumbi ukuya kutsho kumawaka eedigri zeCelsius. Ngokungafaniyo neengcingo zokufudumeza zesinyithi (ezifana ne-tungsten okanye i-molybdenum), ezidla ngokuphinda zijike, zibe buthathaka, okanye ziwohloke xa kushushu kakhulu, i-graphite ineempawu zayo ezikhethekileyo: amandla ayanda xa kushushu.

Amandla Oomatshini Kumaqondo Obushushu Aphezulu kunye Nokumelana Nokudinwa Kwesakhiwo

Amandla okuxinana kunye nokugoba kwezinto zegrafiti ayanda njengoko ubushushu bunyuka, bufikelela kwiqondo eliphezulu phakathi kwe-2000°C kunye ne-2500°C. Olu phawu luqinisekisa ukuba izifudumezi zegrafiti azinawo amaqhekeza oomatshini okanye izakhiwo phantsi kwemitha yobushushu obukhulu kunye nokusebenza kobushushu obuphezulu. Ngenxa yoko, uzinzo lokumelana nombane lugcinwa kwimijikelo emide yokusebenza, nto leyo enciphisa kakhulu ixesha lokungasebenzi kolondolozo olungacwangciswanga.

Uyilo lweMishini ye-3D echanekileyo kunye neZakhiwo zeSekethe eziNcinci

Ii-reactors ze-semiconductor zanamhlanje zifuna ulwakhiwo oluncinci kakhulu lwesithuba. I-graphite ecocekileyo kakhulu inomatshini obalaseleyo kwaye ingacutshungulwa ngokusebenzisa i-high-precision 5-axis CNC machining ibe ziipateni zesekethe ezintsonkothileyo—ezifana nezakhiwo ezinemisonto yesigaba esithathu, iindlela ezigobileyo ze-serpentine, kunye neesekethe ezixineneyo ze-dual-helix. Ezi zicwangciso zejometri ezichanekileyo kakhulu ziphucula indawo yokufudumeza ngaphakathi kwendawo elinganiselweyo, zifezekisa isiphumo soxinano lwamandla aphezulu kunye neziphumo eziphantsi ze-inductance.

Iingenelo eziphambili zokusebenza kwee-SiC Coated Graphite Heaters

Ukuze kumelwane neemeko ezinzima zenkqubo—ezifana ne-atmospheres ezinciphisa i-hydrogen kubushushu obuphezulu okanye iigesi zokugrumba ezine-chlorine/fluorine—ukufaka umaleko weSilicon Carbide oxineneyo (i-CVD SiC Coating) kumphezulu we-grafiti substrate ecocekileyo kakhulu kuye kwaba sisisombululo esisemgangathweni kwishishini.

Ukumelana nokuGxobhozwa kweHydrogen kunye nokuPhela kweeNgcambu eziNgenazo

Ngexesha le-SiC kunye ne-Silicon epitaxy, ubuninzi be-H2 buphezulu₂Igesi ikrazula kakhulu i-graphite engagqunywanga kubushushu obuphezulu (i-hydrogen etching yenza i-methane gas), okwenza umphezulu we-graphite ukhululeke, uqhekeke lula, kwaye uvelise ungcoliseko lwamasuntswana. I-CVD SiC coating exineneyo eyi-100% ivala ii-micro-pores kumphezulu we-graphite, ihlukanise ngokupheleleyo ukukhukuliseka kwegesi kwaye idale imeko-bume yenkqubo ecocekileyo kakhulu engenazo iisuntswana ezichithekayo.

Ukuqina kwi-Aggressive Media kunye nokuncitshiswa kweendleko zobunini (i-TCO)

Kwiindawo zokusabela ezibandakanya iigesi ezisebenzayo kakhulu ezifana ne-HCl kunye ne-NH₃, Iingubo zeCVD SiC zibonisa ukungangeni kakuhle kweekhemikhali. Ayikhuseli nje kuphela i-graphite substrate ekungcoleni kodwa ikwandisa umjikelo wokutshintshwa kwezinto zokufudumeza (ngokuvamile zinyusa ubomi benkonzo ngaphezulu kwama-200%). Oku kunciphisa kakhulu ixabiso elipheleleyo le-semiconductor fab kunye nexabiso elihlawulweyo nge-wafer nganye.

Isifundo seTyala: Ukusombulula ukufana kobushushu kunye nongcoliseko lwamaqhekeza kwi-SiC Epitaxy

Amanqaku eNtlungu yaBathengi:Umvelisi odumileyo wesizukulwana sesithathu se-semiconductor epitaxy eJamani ujongene nemiqobo emibini ebalulekileyo ngexesha lokukhula kwe-epitaxial ye-SiC eyi-intshi ezi-6 (ubushushu benkqubo yi-1650°C, H2O3).₂+ I-TCS atmosphere): Okokuqala, ukuphambuka kobukhulu beleyara ye-epitaxial kwimiphetho ye-wafer kufikelele kwi-±3.8%, nto leyo ebangele ukusilela kwesixhobo somphetho. Okwesibini, i-OEM graphite heater yokuqala ibonakalise ukugrumba okukhulu kwe-hydrogen kumphezulu emva kweeyure ezili-120 kuphela zokusetyenziswa, nto leyo ekhokelele ekunyukeni kwee-particle drop-offs kwigumbi lokusabela—ukudlula imida yoxinano lwe-defect yomgangatho nge-3× ngokomyinge.

Ukuxilongwa kwamandla e-VET kunye nesisombululo esenziwe ngokwezifiso

Emva kokubandakanyeka, iqela lobunjineli be-VET Energy lenze ukulinganisa okudibeneyo kwe-electro-thermal kunye ne-fluid-flow kwi-heater yokuqala ye-OEM. Ukuxilongwa kwatyhila ukuba akukho mali yaneleyo yokubuyisela amandla okufudumeza emaphethelweni kunye nee-micro-pores/ii-thermal stress cracks kumphezulu we-SiC coating (ubukhulu be-coating babuyi-60μm kuphela kunye nokunamathela okubuthathaka). Ukuphendula, i-VET Energy ibonelele ngesisombululo sobunjineli esijoliswe kuyo:

• Ukulungiswa kweSakhiwo seNkundla yoBushushu:Ndisebenzise uyilo lolawulo lokumelana oluzimeleyo oluneendawo ezi-3, ndanciphisa icandelo lokufudumeza nge-8% kufutshane neendawo zokusasaza umbane ukuze ndinyuse uxinano lwamandla asekuhlaleni.
• Ukuphuculwa kweSubstrate ecocekileyo kakhulu:I-graphite ye-isostatic ye-isotropic ephezulu ekhethiweyo enomxholo womlotha <2 ppm, ehambelana ngokuchanekileyo ne-coefficient of thermal expansion (CTE) kunye ne-SiC coating (CTE matching >98%).
• Uphuculo lweNkqubo ye-CVD SiC:Ndisebenzise inkqubo yokubeka i-CVD ephuculweyo, ndanyusa ubukhulu be-SiC yokugquma ukuya kwi-150 ± 10 μm ngesakhiwo sengqolowa esixineneyo, esingenazimbobo esikwaziyo ukumelana ne-1700°CH₂ukuhlanjwa.

Iziphumo zokuphunyezwa kunye nexabiso labathengi elinikezelweyo

Emva kweentsuku ezingama-30 ezilandelelanayo zokuqinisekiswa komgca wemveliso, umthengi uxele ukuba ukusebenza kwakhe kuphuculwe kakhulu: ukufana kobukhulu be-epitaxial obugcweleyo (kuquka nokususwa komphetho we-3mm) kuphucuke kakhulu ukusuka kwi-1.5mm ukuya kwi-1.5mm.±3.8% ukuya ku-±0.8%i-heater isebenza ngokuqhubekayongaphezulu kweeyure ezingama-400ngaphandle kokuqhekeka kwengubo okanye ukuqhekeka komphezulu; iziphene zegumbi elihamba kunye (>0.5μm) bezikhoyehliswe nge-85%Oku kuvelise ngokuthe ngqo ukunyuka kwe-12% kwi-prime chip yield nge-wafer nganye kwaye kunciphisa iindleko zokugcinwa kwezixhobo zonyaka malunga€85,000.

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