Injongo yethu ephambili kukubonelela abathengi bethu ngobudlelwane beshishini obuqinileyo nobunoxanduva, sibanike ingqalelo eyenzelwe bona bonke ukuze bahlolwe umgangatho weTshayina. Ithengiswa ngokushushu, i-Metal Melting Graphite Ingot Mould ekumgangatho ophezulu eyenziwe ngokwezifiso, Samkela ngokufudumeleyo abahlobo abasondeleyo abavela kuzo zonke iinkalo zobomi bemihla ngemihla ukuze bafune intsebenziswano kunye nokwakha ikamva elihle neliqaqambileyo.
Injongo yethu ephambili kukubonelela abathengi bethu ngobudlelwane beshishini obuqinileyo nobunoxanduva, sibanike ingqalelo ekhethekileyo kubo bonke.I-China Continuous Casting Graphite Jig, I-Round Coating Graphite MoldSiyalivuyela ithuba lokwenza ushishino nawe kwaye sinethemba lokuba siya kukuvuyela ukunamathisela iinkcukacha ezithe vetshe ngeemveliso zethu kunye nezisombululo. Umgangatho ogqwesileyo, ixabiso elikhuphisanayo, ukuhanjiswa ngexesha kunye nenkonzo ethembekileyo kunokuqinisekiswa. Ukuba unemibuzo engaphezulu nceda ungathandabuzi ukunxibelelana nathi.
Ii-carbon / ii-carbon composite(emva koku kuthiwa “C / C okanye CFC”) luhlobo lwezinto ezidityanisiweyo ezisekelwe kwikhabhoni kwaye ziqiniswe yi-carbon fiber kunye neemveliso zayo (i-carbon fiber preform). Inamandla ekhabhoni kunye namandla aphezulu e-carbon fiber. Ineempawu ezilungileyo zoomatshini, ukumelana nobushushu, ukumelana nokugqwala, ukuxinana kunye neempawu zokuqhuba ubushushu kunye nombane.
I-CVD-SiCUkwaleka kuneempawu zesakhiwo esifanayo, izinto ezincinci, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ubunyulu obuphezulu, ukumelana ne-asidi kunye ne-alkali kunye ne-reagent yendalo, eneempawu zomzimba nezizinzileyo.
Xa kuthelekiswa nezinto zegrafiti ezicocekileyo kakhulu, igrafiti iqala ukunyibilika kwi-400C, nto leyo eya kubangela ukulahleka komgubo ngenxa yokunyibilika, nto leyo eya kubangela ungcoliseko lokusingqongileyo kwizixhobo ezingaphandle kunye namagumbi okufunxa, kwaye yonyusa ukungcola kwendawo ecocekileyo kakhulu.
Nangona kunjalo, i-SiC coating inokugcina uzinzo lomzimba kunye neekhemikhali kwi-1600 degrees, Isetyenziswa kakhulu kushishino lwanamhlanje, ngakumbi kushishino lwe-semiconductor.
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko okhuselayo we-SIC. I-SIC eyenziweyo ibotshelelwe ngokuqinileyo kwisiseko segrafiti, inika isiseko segrafiti iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu wegrafiti ube mncinci, ungabi naPorosity, uxhathiso oluphezulu lobushushu, uxhathiso lokugqwala kunye noxhathiso lwe-oxidation.
Iimpawu eziphambili:
1. Ukumelana ne-oxidation yobushushu obuphezulu:
Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.
2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.
3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.
4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.
Iinkcukacha eziphambili zeengubo zeCVD-SIC:
| I-SiC-CVD | ||
| Uxinano | (g/cc)
| 3.21 |
| Amandla okugobeka | (iMpa)
| 470 |
| Ukwandiswa kobushushu | (10-6/K) | 4
|
| Ukuqhuba kobushushu | (W/mK) | 300
|
