Iyini i-CVD SiC Coating?

I-CVDUkufakwa kwe-SiCilungisa kabusha imikhawulo yezinqubo zokukhiqiza i-semiconductor ngenani elimangalisayo. Lobu buchwepheshe bokumboza obubonakala bulula buye baba yisixazululo esibalulekile ezinseleleni ezintathu eziyinhloko zokungcoliswa kwezinhlayiyana, ukugqwala okunezinga lokushisa eliphezulu kanye nokuguguleka kwe-plasma ekukhiqizeni ama-chip. Abakhiqizi bempahla esezingeni eliphezulu emhlabeni jikelele bayifake kuhlu njengobuchwepheshe obujwayelekile bemishini yesizukulwane esilandelayo. Ngakho-ke, yini eyenza lokhu kugqokwa kube “izikhali ezingabonakali” zokwenziwa kwama-chip? Lesi sihloko sizohlaziya ngokujulile izimiso zayo zobuchwepheshe, izinhlelo zokusebenza eziwumongo kanye nempumelelo esezingeni eliphezulu.

Ⅰ. Incazelo ye-CVD SiC coating

I-CVD SiC coating isho ungqimba oluyisivikelo lwe-silicon carbide (SiC) olufakwe ku-substrate ngenqubo ye-chemical vapor deposition (CVD). I-Silicon carbide iyinhlanganisela ye-silicon ne-carbon, eyaziwa ngobulukhuni bayo obuhle kakhulu, ukuqhutshwa kokushisa okuphezulu, ukungabi namakhemikhali kwamakhemikhali kanye nokumelana nokushisa okuphezulu. Ubuchwepheshe be-CVD bungakha ungqimba lwe-SiC oluphakeme kakhulu, oluminyene futhi oluwugqinsi, futhi lungahambisana kakhulu namajiyometri ayinkimbinkimbi. Lokhu kwenza i-CVD SiC coatings ifaneleke kakhulu kwizicelo ezifunayo ezingenakuhlangatshezwana nezinto zendabuko eziyinqwaba noma ezinye izindlela zokumboza.

Ⅱ. Isimiso senqubo ye-CVD

I-Chemical vapor deposition (CVD) iyindlela yokukhiqiza eguquguqukayo esetshenziselwa ukukhiqiza izinto eziqinile ezisezingeni eliphezulu, ezisebenza kahle kakhulu. Umgomo oyinhloko we-CVD uhilela ukusabela kwezandulela zegesi ebusweni be-substrate eshisayo ukuze kwakhe ukunamathela okuqinile.

Nakhu ukuhlukaniswa okwenziwe lula kwenqubo ye-SiC CVD:

Umdwebo wesimiso senqubo ye-CVD

1. Isingeniso esandulelayo: Izandulela zegesi, ngokuvamile amagesi aqukethe i-silicon (isb, i-methyltrichlorosilane - MTS, noma i-silane - SiH₄) namagesi aqukethe i-carbon (isb, i-propane - C₃H₈), angeniswa ekamelweni lokuphendula.

2. Ukulethwa kwegesi: Lawa magesi angaphambili ageleza phezu kwe-substrate eshisayo.

3. I-Adsorption: Ama-molecule andulelayo akhangisa ngaphezulu kwe-substrate eshisayo.

4. Ukusabela kobuso: Emazingeni okushisa aphezulu, ama-molecule e-adsorbed abhekana nokusabela kwamakhemikhali, okuholela ekuboleni kwesandulela kanye nokwakhiwa kwefilimu ye-SiC eqinile. Ama-Byproducts akhululwa ngendlela yamagesi.

5. I-Desorption kanye nokuphelelwa amandla: I-Gaseous byproducts desorb kusuka phezulu bese iyaphuma egumbini. Ukulawulwa okunembile kwezinga lokushisa, ingcindezi, izinga lokugeleza kwegesi kanye nokugxila kwe-precursor kubalulekile ekuzuzeni izakhiwo zefilimu ezifunwayo, okuhlanganisa ukushuba, ukuhlanzeka, ukucwebezela nokunamathela.

Ⅲ. Ukusetshenziswa kwe-CVD SiC Coatings ku-Semiconductor Processes

Izingubo ze-CVD SiC zibalulekile ekwenziweni kwe-semiconductor ngoba inhlanganisela yazo eyingqayizivele yezakhiwo ihlangabezana ngokuqondile nezimo ezibucayi kanye nezidingo zokuhlanzeka eziqinile zendawo yokukhiqiza. Bathuthukisa ukumelana nokugqwala kwe-plasma, ukuhlaselwa kwamakhemikhali, kanye nokukhiqizwa kwezinhlayiyana, konke okubalulekile ekwandiseni isivuno se-wafer kanye nesikhathi sokusebenza kwemishini.

Okulandelayo ezinye izingxenye ezijwayelekile ze-CVD SiC eziboshwe kanye nezimo zohlelo lwazo:

1. I-Plasma Etching Chamber ne-Focus Ring

Imikhiqizo: I-CVD SiC coated liners, ama-showerheads, ama-susceptors, namasongo okugxila.

Isicelo: Ku-plasma etching, i-plasma esebenza kakhulu isetshenziselwa ukususa izinto kuma-wafers. Izinto ezinganandiwe noma ezihlala isikhathi eside ziwohloka ngokushesha, okuholela ekungcoleni kwezinhlayiyana kanye nesikhathi sokuphumula esivamile. I-CVD SiC coatings inokumelana okuhle kakhulu namakhemikhali e-plasma anolaka (isb, i-fluorine, i-chlorine, i-bromine plasmas), yandise impilo yezingxenye ezibalulekile zegumbi, futhi inciphise ukukhiqizwa kwezinhlayiyana, okwandisa ngokuqondile isivuno se-wafer.

2.PECVD kanye HDPCVD amakamelo

Imikhiqizo: CVD SiC camera amagumbi okusabela kanye electrode.

Izinhlelo zokusebenza: I-Plasma enhanced chemical vapor deposition (PECVD) kanye ne-high density plasma CVD (HDPCVD) isetshenziselwa ukufaka amafilimu amancane (isb., izendlalelo ze-dielectric, izendlalelo ze-passivation). Lezi zinqubo zihlanganisa izindawo ezinokhahlo ze-plasma. Izembatho ze-CVD SiC zivikela izindonga zamakamelo nama-electrode ekugugulekeni, ziqinisekisa ikhwalithi yefilimu engaguquki kanye nokunciphisa amaphutha.

3. Imishini yokufaka i-ion

Imikhiqizo: I-CVD SiC enezingxenye zomugqa wohlaka (isb., izindawo zokungena, izinkomishi ze-Faraday).

Izinhlelo zokusebenza: Ukufakwa kwe-ion kwethula ama-ion e-dopant kuma-semiconductor substrates. Imishayo ye-ion enamandla amakhulu ingabangela ukuphalaza nokuguguleka kwezingxenye eziveziwe. Ubulukhuni nokuhlanzeka okuphezulu kwe-CVD SiC kunciphisa ukukhiqizwa kwezinhlayiyana kusuka ezingxenyeni ze-beamline, ukuvimbela ukungcoliswa kwama-wafers ngalesi sinyathelo esibucayi se-doping.

4. Izingxenye ze-Epitaxial reactor

Imikhiqizo: I-CVD SiC coated susceptors kanye nabasabalalisi begesi.

Izinhlelo zokusebenza: Ukukhula kwe-Epitaxial (EPI) kufaka phakathi ukukhulisa izendlalelo zekristalu ezi-odwe kakhulu endaweni engaphansi emazingeni okushisa aphezulu. I-CVD SiC coated susceptors inikeza ukuzinza okuhle kakhulu kokushisa kanye nokungangeni kwamakhemikhali emazingeni okushisa aphezulu, iqinisekisa ukushisa okufanayo nokuvimbela ukungcoliswa kwe-susceptor ngokwayo, okubalulekile ekufezeni izendlalelo ze-epitaxial eziphezulu.

Njengoba ama-chip geometries ancipha kanye nezimfuno zenqubo ziya ngokuya ziba namandla, isidingo sabahlinzeki bekhwalithi ephezulu be-CVD SiC coating kanye nabakhiqizi bezingubo ze-CVD siyaqhubeka nokukhula.

IV. Yiziphi izinselelo zenqubo yokuhlanganisa i-CVD SiC?

Naphezu kwezinzuzo ezinkulu zokumbozwa kwe-CVD SiC, ukukhiqizwa kwayo nokusetshenziswa kwayo kusabhekene nezinselelo ezithile zenqubo. Ukuxazulula lezi zinselele kuyisihluthulelo sokuzuza ukusebenza okuzinzile kanye nokuphumelela kwezindleko.

Izinselelo:

1. Ukunamathela ku-substrate

I-SiC ingaba inselele ukuzuza ukunamathela okuqinile nokufanayo ezintweni ezihlukahlukene ze-substrate (isb., i-graphite, i-silicon, i-ceramic) ngenxa yomehluko kuma-coefficients wokunweba okushisayo namandla angaphezulu. Ukunamathela okungalungile kungaholela ekudaleni ngesikhathi sokuhamba ngebhayisikili elishisayo noma ukucindezeleka komshini.

Izixazululo:

Ukulungiswa kwendawo: Ukuhlanzwa okucophelelayo kanye nokwelashwa kwendawo (isb., ukufakwa, ukwelashwa kwe-plasma) kwe-substrate ukuze kukhishwe ukungcola nokudala indawo efanelekile yokubopha.

I-interlayer: Idiphozithi i-interlayer encane futhi eyenziwe ngokwezifiso noma isendlalelo sebhafa (isb, i-pyrolytic carbon, i-TaC - efana ne-CVD TaC enamathela ezinhlelweni ezithile) ukuze unciphise ukungezwani kokwanda okushisayo nokukhuthaza ukunamathela.

Lungiselela amapharamitha wokubeka: Lawula ngokucophelela izinga lokushisa elibekiwe, ingcindezi, negesi isilinganiso ukuze uthuthukise i-nucleation nokukhula kwamafilimu e-SiC futhi ukhuthaze ukuhlangana okuqinile kobuso.

2. Ukucindezeleka Kwefilimu Nokuqhekeka

Ngesikhathi sokufakwa noma ukupholisa okulandelayo, izingcindezi eziyinsalela zingakhula ngaphakathi kwamafilimu e-SiC, kubangele ukuqhekeka noma ukungqubuzana, ikakhulukazi kumajiyometri amakhulu noma ayinkimbinkimbi.

Izixazululo:

Ukulawula izinga lokushisa: Lawula ngokunembile amazinga okushisa nawokupholisa ukuze unciphise ukushaqeka okushisayo nengcindezi.

I-Gradient Coating: Sebenzisa izindlela zokumboza zezendlalelo eziningi noma zegradient ukuze uguqule kancane kancane ukwakheka kwezinto noma ukwakheka ukuze kuhlangatshezwane nengcindezi.

I-Post-Deposition Annealing: Hlanganisa izingxenye ezimboziwe ukuze uqede ukucindezeleka okusalayo futhi uthuthukise ubuqotho befilimu.

3. Ukuvumelana kanye Nokufaniswa Kwejiyometri Eyinkimbinkimbi

Ukufaka okunamathelayo okuwugqinsi nokuvumelanayo ezingxenyeni ezinomumo oyinkimbinkimbi, izilinganiso eziphakeme, noma amashaneli angaphakathi kungaba nzima ngenxa yemikhawulo yokusabalaliswa kwesandulela kanye ne-kinetics yokusabela.

Izixazululo:

Ukuthuthukiswa Kwedizayini Ye-Reactor: Dizayina ama-CVD ama-reactors anamandla okugeleza kwegesi athuthukisiwe kanye nokufana kwezinga lokushisa ukuze kuqinisekiswe ukusatshalaliswa okufanayo kwezandulela.

Ukulungiswa Kwepharamitha Yenqubo: Hlela kahle ingcindezi yokubeka, izinga lokugeleza, nokugxiliswa kwesandulela ukuze kuthuthukiswe ukusakazeka kwesigaba segesi zibe izici eziyinkimbinkimbi.

Ukubekwa kwezigaba eziningi: Sebenzisa izinyathelo eziqhubekayo zokubeka noma izinto ezizungezayo ukuze uqinisekise ukuthi zonke izindawo ziboshwe ngokwanele.

V. FAQ

Q1: Uyini umehluko oyinhloko phakathi kwe-CVD SiC ne-PVD SiC ezinhlelweni ze-semiconductor?

A: Izembatho ze-CVD ziyizakhiwo zekristalu zekholomu ezinobumsulwa be> 99.99%, ezifanele izindawo ze-plasma; Izingubo ze-PVD ngokuvamile ziyi-amorphous/nanocrystalline enobumsulwa obungu-<99.9%, ikakhulukazi esetshenziselwa ukuhlobisa.

I-Q2: Yiliphi izinga lokushisa eliphezulu elingamelana ne-coating?

A: Ukubekezelela isikhathi esifushane kwe-1650 ° C (njengenqubo yokuthungatha), umkhawulo wokusebenzisa isikhathi eside we-1450 ° C, ukudlula lokhu kushisa kuzodala ukuguqulwa kwesigaba kusuka ku-β-SiC kuya ku-α-SiC.

Q3: Ibanga lokujiya elijwayelekile?

A: Izingxenye ze-Semiconductor ngokuvamile ziyi-80-150μm, futhi injini yendiza ye-EBC enamathela ingafinyelela ku-300-500μm.

Q4: Yiziphi izici ezibalulekile ezithinta izindleko?

A: Ukuhlanzeka kwesandulela (40%), ukusetshenziswa kwamandla kwemishini (30%), ukulahlekelwa kwesivuno (20%). Intengo yeyunithi yezingubo ezisezingeni eliphezulu ingafinyelela ku-$5,000/kg.

Q5: Yibaphi abahlinzeki abakhulu bomhlaba wonke?

A: IYurophu ne-United States: CoorsTek, Mersen, Ionbond; E-Asia: Semixlab, Veteksemicon, Kallex (Taiwan), Scientech (Taiwan)