Izingxenye ze-SiC Epitaxial

Izembozo ze-CVD Ezithuthukisiwe Zokukhula Kwe-SiC Epitaxial

Yenzelwe izinqubo zedivayisi ye-semiconductor enamandla aphezulu esebenza ngaphansi kokucindezeleka okukhulu kokushisa (1500°C - 1700°C), ama-susceptor ethu eplanethi ahlanganiswe yi-CVD SiC kanye ne-TaC, amadiski e-satellite, kanye nama-gas deflector akhelwe ukwenza kahle kakhulu. Aklanyelwe ukuvimbela ukukhiqizwa kwezinhlayiya, ukuwohloka kobuso, kanye nokuqoshwa kwegesi okusebenzayo (H₂, SiH₄, C₃H∯), izembozo zethu ezithuthukisiwe ziqinisekisa isikhathi eside sokusebenza, ukulawulwa okuphezulu kwe-dopant, kanye nokufana kobukhulu befilimu kulo lonke.Ama-wafer e-SiC epitaxial angamasentimitha angu-6 kanye nangu-8.

Ukuqina Kokushisa Okuphezulu Kakhulu

Ukuqina kokushisa kufika ku-1700°C ezindaweni ezibucayi zokunciphisa i-H₂/silane.

Ukufaniswa kwe-Gradient CTE

Iqeda ukwahlukana kwe-coating, i-micro-cracking, kanye ne-spalling ngesikhathi sokujikeleza okusheshayo kokushisa.

Ukulungela Isikali Se-Wafer Esiyi-intshi Eziyi-8

Umshini wokugaya we-CNC oqondile owenzelwe ama-reactor e-SiC Epi aphezulu esizukulwaneni esilandelayo (i-LPE, i-Aixtron, i-Nuflare).

Ipharamitha Yobuchwepheshe	Inani Lokucaciswa	Indlela Ejwayelekile / Yokuhlola
Izinketho Zezinto Zokumboza	I-CVD SiC / Tantalum Carbide (TaC)	Isendlalelo Esihlanzekile Kakhulu
Isisekelo Esiyisisekelo	I-Graphite Ehlanziwe Ehlanzekile	Ukungcola Okukhulu < 5 ppm
Ukumelana Nokushaqeka Okushisayo	I-Delta T > 500°C Izinga Lokukhuphuka	Akukho ukuqhekeka/ukuqhekeka
Ubulukhuni Bomphezulu (Ra)	≤ 0.4 μm (Isibuko Esicwebezelisiwe)	Ivimbela Ukunamathela Kwe-Wafer kanye Nezinhlayiya