Iyini i-TaC Coating?

Embonini ye-semiconductor ethuthuka ngokushesha, izinto ezithuthukisa ukusebenza, ukuqina, nokusebenza kahle zibalulekile. Enye yezinto ezintsha ezinjalo i-Tantalum Carbide (TaC), isendlalelo sokuvikela esinqamulelayo esisetshenziswa ezingxenyeni zegraphite. Le bhulogi ihlola incazelo ye-TaC enamathelayo, izinzuzo zobuchwepheshe, kanye nezinhlelo zayo eziguqulayo ekukhiqizeni ama-semiconductor.

Ⅰ. Iyini i-TaC Coating?

I-TaC enamathelayo isendlalelo se-ceramic esebenza kahle kakhulu esakhiwe nge-tantalum carbide (inhlanganisela ye-tantalum ne-carbon) efakwe endaweni yegraphite. I-coating ngokuvamile isetshenziswa kusetshenziswa amasu e-Chemical Vapor Deposition (CVD) noma ama-Physical Vapor Deposition (PVD), okwenza umgoqo ominyene, ohlanzekile kakhulu ovikela i-graphite ezimeni ezimbi kakhulu.

Izakhiwo Ezibalulekile Ze-TaC Coating

●High-Temperature Ukuzinza: Imelana nezinga lokushisa elingaphezu kuka-2200°C, idlula izinto ezivamile zendabuko njenge-silicon carbide (SiC), ewohlokayo ngaphezu kuka-1600°C.

●Ukumelana Kwamakhemikhali: Imelana nokugqwala okuvela ku-hydrogen (H₂), i-ammonia (NH₃), imihwamuko ye-silicon, nezinsimbi ezincibilikisiwe, okubalulekile ezindaweni zokucubungula i-semiconductor.

●Ukuhlanzeka Okuphezulu Okuphezulu: Amazinga okungcola angaphansi kuka-5 ppm, anciphisa izingozi zokungcola ezinqubweni zokukhula kwekristalu.

●Ukuqina Okushisayo Nemishini: Ukunamathela okuqinile ku-graphite, ukunwetshwa okushisayo okuphansi (6.3×10⁻⁶/K), nobulukhuni (~2000 HK) kuqinisekisa ukuphila isikhathi eside ngaphansi kokuhamba ngebhayisikili okushisayo.

Ⅱ. I-TaC Coating in Semiconductor Manufacturing: Izicelo Ezibalulekile

Izingxenye ze-graphite ezinamekwe nge-TaC zibalulekile ekwenziweni kwe-semiconductor ethuthukisiwe, ikakhulukazi kumadivayisi we-silicon carbide (SiC) kanye ne-gallium nitride (GaN). Ngezansi izimo zabo ezibucayi zokusetshenziswa:

1. I-SiC Single Crystal Ukukhula

Ama-wafers e-SiC abalulekile kuma-electronics kanye nezimoto zikagesi. Izihluthulelo ze-graphite ezinamekwe nge-TaC zisetshenziswa ezinhlelweni Zokuthutha Umhwamuko Womzimba (PVT) kanye ne-High-Temperature CVD (HT-CVD) ukuze:

● Cindezela Ukungcola: Okuqukethwe okuphansi kokungcola kwe-TaC (isb., i-boron <0.01 ppm vs. 1 ppm ku-graphite) yehlisa amaphutha kumakristalu e-SiC, ithuthukisa ukumelana ne-wafer (4.5 ohm-cm vs. 0.1 ohm-cm yegraphite engagcotshiwe).

● Thuthukisa Ukulawula Okushisayo: Ukukhipha ukungcola okufanayo (0.3 ku-1000°C) kuqinisekisa ukusatshalaliswa kokushisa okungaguquki, kuthuthukisa ikhwalithi yekristalu.

2. Ukukhula kwe-Epitaxial (GaN/SiC)

Kuma-reactors e-Metal-Organic CVD (MOCVD), izingxenye ezimbozwe yi-TaC njengezithwali ze-wafer nama-injection:

●Vimbela Ukusabela Kwegesi: Imelana nokujutshwa yi-ammonia ne-hydrogen ku-1400°C, igcina ubuqotho be-reactor.

●Thuthukisa Isivuno: Ngokunciphisa ukuchitheka kwezinhlayiyana ku-graphite, ukunamathela kwe-CVD TaC kunciphisa amaphutha ezendlalelo ze-epitaxial, okubalulekile kuma-LED asebenza kahle namadivayisi e-RF.

3. Ezinye izinhlelo zokusebenza ze-Semiconductor

●Ama-Reactor Amazinga Okushisa aphezulu: Izisetshenziswa nezifudumezi ekukhiqizweni kwe-GaN ziyazuza ekuzinzeni kwe-TaC ezindaweni ezicebile nge-hydrogen.

●Ukuphatha i-wafer: Izingxenye ezimboziwe njengezindandatho nezivalo zinciphisa ukungcoliswa kwensimbi ngesikhathi sokudluliswa kwe-wafer

Ⅲ. Kungani I-TaC Coating Iphumelela Ukudlula Ezinye Izindlela?

Ukuqhathanisa nezinto ezivamile kuveza ukuphakama kwe-TaC:

Idatha ithathwe ekuqhathanisweni komkhakha

IV. Kungani ukhetha i-VET?

Ngemuva kokutshalwa kwezimali okuqhubekayo ocwaningweni nasekuthuthukisweni kwezobuchwepheshe,I-VET's Tantalum carbide (TaC) camera izingxenye, ezifanaI-TaC embozwe indandatho ye-graphite yomhlahlandlela, I-CVD TaC Coated plate susceptor, I-TaC Coated Susceptor ye-Epitaxy Equipment,I-Tantalum carbide imbozwe nge-porous graphite materialfuthiI-wafer susceptor ene-TaC coating, zithandwa kakhulu ezimakethe zaseYurophu nezaseMelika. I-VET ibheke ngabomvu ukuba nguzakwethu wesikhathi eside.