Izingxenye Ezimbozwe Nge-CVD SiC ze-Silicon Epitaxy (Si Epi)
Yakhelwe ngokunembile izinhlelo zokufaka i-single-wafer kanye ne-batch Silicon Epitaxial, ama-susceptor ethu ambozwe nge-CVD SiC, ama-satellite disk, kanye nezingxenye zensimu yokushisa ziletha ukufana okuvelele kokushisa kanye nokukhipha igesi. Isendlalelo sokumboza se-cubic β-SiC esine-density ephezulu simboza ngokuphelele i-substrate ye-graphite ehlanzekile kakhulu, sivimbele ukugqwala kwegesi okusebenzayo (i-SiH₄, i-SiH₂Cl₂, i-HCl) futhi siqinisekisa amazinga okungcola kwensimbi aphansi kakhulu (< 5 ppm) ngesikhathi sokucubungula kwe-Si Epi eshisa kakhulu (1000°C - 1200°C).
Ukukhishwa kwe-emissivity okulawulwayo kuqinisekisa ukuqina okunembile kwefilimu enqenqemeni kuya maphakathi.
Ihlinzeka ngokuvikelwa okuqinile kumakhemikhali okuhlanza angaphakathi kwegumbi kanye nokushaqeka kokushisa.
I-CNC eqondile efakwe ngomshini ukuze ilingane namathuluzi e-Epi angu-200mm/300mm ajwayelekile ane-wafer eyodwa (Izinto Ezisetshenziswayo, i-ASM).
| Ipharamitha Yobuchwepheshe | Inani Lokucaciswa | Indlela Ejwayelekile / Yokuhlola |
|---|---|---|
| Izinto Zokumboza | I-CVD β-SiC (Isigaba se-Cubic) | Isakhiwo sekristalu esinobuningi obuphezulu |
| Izinto Ezingaphansi Kwesakhiwo | I-Graphite Engacwengekile Kakhulu | Ubuningi: 1.82 - 1.88 g/cm³ |
| Ukuhlanzeka Kwamakhemikhali | Ukungcola okuphelele < 5 ppm | I-GDMS Ihlolwe |
| Ubukhulu Bokumboza | 80 μm - 150 μm | Ukufana ≤ ±5% |
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