N'ọrụ mmepụta ngwaọrụ semiconductor nke oge a na mmepụta semiconductor nke ọgbọ nke atọ (dịka Silicon Carbide [SiC] na Gallium Nitride [GaN]), mkparịta ụka ụlọ ọrụ na-elekwasịkarị anya na igwe lithography EUV dị elu, ihe e ji plasma mee, ma ọ bụ ịdị ọcha gas dị elu. Agbanyeghị, n'ime gburugburu ebe obibi dị ọcha nke ukwuu, nke na-emebi emebi nke ukwuu, na nke dị elu nke ụlọ mmeghachi omume, dike a na-akpọghị aha dị oke mkpa: ihe na-egbochi Graphite.
1. Kedu ihe bụ Susceptor Graphite?
A Ihe na-egbochi graphitebụ ihe eji ebu ibu ọrụ nke e ji nhazi ziri ezi mepụta nke e ji graphite dị ọcha ma ọ bụ nke e si n'elu mepụta nke e ji ike dị iche iche mepụta, nke na-egosipụtakarị ụdị diski, akpa, ma ọ bụ omenala.Jiometrị nwere akụkụ atọ nke ahaziri iji dabara na ụlọ mmeghachi omume kpọmkwem.
N'ime akụrụngwa dịka Chemical Vapor Deposition (CVD), Metal-Organic Chemical Vapor Deposition (MOCVD), na Rapid Thermal Processing (RTP), ọrụ bụ isi nke ikpo okwu ebu ibu bụ ijide wafers semiconductor n'enweghị nsogbu mgbe ha na-eje ozi dị ka ihe mgbanwe okpomọkụ bụ isi. Site na iji usoro kpo oku nke Graphite susceptor induction, ihe mejupụtara ya na-amịkọrọ ngwa ngwa Radio Frequency (RF) ma ọ bụ ike electromagnetic microwave ma gbanwee ya ka ọ bụrụ ike okpomọkụ otu, na-eme ka njikwa okpomọkụ nke ọkwa millisecond dị mfe n'ofe wafer ahụ.
2. Ihe mejupụtara ihe na nhazi obere: Gịnị kpatara mkpuchi Isostatic Graphite + CVD SiC ji dị mkpa?
Graphite a na-ekpuchighị ekpuchi enweghị ike ịlanarị ikuku kemịkalụ siri ike na ihe achọrọ maka ịdị ọcha siri ike nke imepụta semiconductor. Ihe ndị na-egbochi Graphite nke oge a na-eji sistemụ pụrụ iche nke nwere akwa abụọ:
(1) Ihe mejupụtara Isostatic Graphite dị ọcha nke ukwuu
A na-eji graphite nke a na-agbanye n'ime ya emepụta isi ihe dị n'ime ya. Site n'ịhazi nhazi nke graphite micro crystalline, ọ na-enweta ihe ndị dị na ya dị ka isotropic, obere porosity, na ike flexural dị elu, na-enye ntọala zuru oke maka obere igwe na-arụ ọrụ na obere obere wafer pocket geometries dị mgbagwoju anya.
(2) Mkpuchi Nchedo CVD Silicon Carbide (SiC)
Site na iji Nkwụsị Mmiri Kemịkal, a na-akụ akwa dị oke njupụta nke B-SiC poly-crystalline (nke na-adịkarị site na 10 ruo 100 um na ịdị ọcha 99.999%) n'elu ihe mkpuchi graphite. Mkpuchi a na-emechi obere oghere graphite elu kpamkpam, na-egbochi mwụfu ihe dị n'ime ya, ma na-enye ihe mgbochi a na-apụghị ịgbapu agbapu megide gas ndị na-emebi emebi dịka HCI, NH,, na ihe ndị a na-akpọ fluorinated compounds.
3. Njirimara Anụ Ahụ na Nkọwapụta Ihe Ndị Dị Mkpa
Dabere na nnwale ụlọ nyocha siri ike na ihe nrịbama ụlọ ọrụ akwadoro, ihe ndị na-egbochi graphite dị ọcha nke nwere ihe mkpuchi dị elu na-egosipụta paramita anụ ahụ dị oke mkpa ndị a:
| Anụ ahụ / Kemịkal Paramita | Uru Ntụaka Ọkọlọtọ | Uru na Mmetụta Arụmọrụ Usoro |
| Ngụkọta ntụ dị na ya (Ịdị ọcha) | <5 ppm (Ntụziaka: XR Graphite Spec Data) | Na-ewepụ mmetọ ígwè, na-eme ka akwa epitaxial ghara inwe ntụpọ. |
| Njupụta Dị Anya | Ihe e ji mee ala: 1.85 g/cm³ | SiC: 3.21 g/cm³ | Obere okpomọkụ na-adịghị ike maka ọnụego ịrị elu ngwa ngwa yana shei a na-apụghị ịgbapụ. |
| Ike nke Flexural | ≥ 49 MPa (Ihe ndị dị n'okpuru ala) | ~450 MPa (SiC) | Ọ na-anagide nrụgide okpomọkụ dị oke njọ na ibu wafer dị arọ na-enweghị mgbagharị. |
| Oke Okpomọkụ Ọrụ Kachasị | > 1500°C – 1800°C | Na-ejigide iguzosi ike n'ezi ihe n'oge uto kristal SiC dị elu. |
| Ọgbakọ okpomọkụ | ~116 W/m·K (100 kcal/cm·h·°C) | Na-agbasa ebe ọkụ dị n'ógbè ahụ ngwa ngwa, na-enweta obere okpomọkụ gradient (ΔT). |
| Nguzogide Ọdụdọ Eletriki | ~11 μΩ·m | Emebere ya nke ọma maka ikpo ọkụ nke na-egbochi graphite nke ọma. |
Uru Injinia Isi:
1. Nguzogide Mkpọchi Okpomọkụ Kachasị Elu: Nwere ike idi usoro ikpo ọkụ na oyi ngwa ngwa na-aga n'ihu (karịa 1500°C) na-enweghị mgbawa ma ọ bụ delamination.
2. Enweghị ike kemịkalụ: Ọ dịghị emerụ ahụ kpamkpam site na H2, NH3, gas silane, na ihe nhicha kemịkalụ siri ike.
3. Ndakọrịta nke Mgbasawanye Okpomọkụ (CTE): Usoro ntinye SiC nke VET Energy nke nwere ikike na-ejikọta omume mgbasawanye okpomọkụ nke mkpuchi SiC na isi graphite, na-egbochi mgbawa mkpuchi na oke okpomọkụ.
4. Ọrụ na Ngwa na Nhazi Semiconductor
A pụrụ ịtụkwasị obi nke ukwuu Ihe ndị na-egbochi graphite na-arụ ọrụ dị ka ihe ndị na-enyere aka n'ọtụtụ usoro mmepụta semiconductor dị mkpa:
(1) CVD na MOCVD Epitaxial Uto (Epi)
N'ime mmepụta ọkụ eletrik nke GaN LED, SiC power device epitaxy, na silicon wafer epi-growth, ọkpụrụkpụ ihe nkiri na otu doping na-adabere nke ukwuu na nhazi okpomọkụ. Ihe ndị na-egbochi graphite na-ekesa okpomọkụ n'otu aka ahụ n'ofe nhazi otu ma ọ bụ ọtụtụ wafer n'oge ntụgharị, na-egbochi wafer na-ada ma ọ bụ ahịrị slip nke nrụgide okpomọkụ kpatara.
(2) Otu Crystal Uto (Usoro PVT)
N'oge uto kristal Silicon Carbide (SiC) na Sapphire site na Physical Vapor Transport (PVT), ihe na-egbochi ya na-akọwapụta gradient mpaghara okpomọkụ, na-eduzi kpọmkwem nhazi ingot otu kristal ma na-ebelata njupụta dislocation.
(3) Nhazi Okpomọkụ Ngwa Ngwa (RTP) na Mkpochapụ
Site na iji ọkụ ọkụ nke Graphite susceptor induction dị irè, ikpo okwu ahụ na-enye ohere maka oge nzaghachi okpomọkụ dị oke ọsọ dị mkpa maka njikọta lattice mgbe etinyere ya na nhazi njikọ.
5. Gịnị mere ị ga-eji họrọ ike VET?
Site n'ihe achọrọ maka iguzogide ike nke usoro ọkọnọ, ịdị ọcha dị oke elu, na ndụ ọrụ ogologo oge,Ike VETpụtara ìhè dị ka onye mmekọ injinia zuru ụwa ọnụ a pụrụ ịtụkwasị obi:
1. Nrụpụta Micro-Machining nke ọma: Ebe nhazi CNC dị iche iche na-enye ohere ka akpa wafer dị mgbagwoju anya, obere oghere, na ọwa gas aerodynamic ahaziri ahazi nwee ike ịnagide ya ruo na ọkwa micrometer.
2. Ntinye CVD SiC dị elu: Usoro CVD anyị nwere n'aka anyị na-enweta mkpuchi SiC siri ike nke enyo nke na-eme ka ọ dị mma nke ukwuu, nke na-agbatị ndụ ọrụ okpomọkụ karịa 30%.
3. Gburugburu Nhazi Dị Ọcha nke Uhie: Nhicha zuru oke na njikwa ụlọ nhicha na-ekwe nkwa na ọdịnaya ntụ zuru oke na-adị n'okpuru 5 ppm, nke na-eme ka semiconductor OEM siri ike.Ụkpụrụ Fab.
4. Ọnụ ego kacha mma nke nwe (CoO)VET Energy na-enye oge ndu ngwa ngwa yana oke ọnụahịa na arụmọrụ asọmpi, na-enyere ndị na-emepụta chips aka ibelata mmefu oriri.
Oge ozi: Ọgọst-14-2026