Tlhahisong ea sejoale-joale ea lisebelisoa tsa semiconductor le tlhahiso ea semiconductor ea motsoako oa moloko oa boraro (joalo ka Silicon Carbide [SiC] le Gallium Nitride [GaN]), lipuisano tsa indasteri hangata li shebana le mechini ea lithography ea EUV e tsoetseng pele haholo, li-etcher tsa plasma, kapa bohloeki ba khase ea pele. Leha ho le joalo, ka hare ho tikoloho e hloekileng haholo, e senyang haholo, le e nang le mocheso o phahameng oa kamore ea karabelo ho lutse mohale oa bohlokoa ea sa tsejoeng: mothusi oa Graphite.
1. Graphite Susceptor ke eng?
A Sesebelisi sa grafitike karolo ea sesebelisoa se sebetsang se entsoeng ka mokhoa o nepahetseng se entsoeng ka graphite e bōpiloeng ka iso kapa e ntšitsoeng ka ntle, hangata e nang le sebopeho sa disk, e kentsoeng ka pokothong, kapa e etselitsoeng motho ka mong.li-geometri tse mahlakore a mararo tse etselitsoeng ho lekana likamore tse itseng tsa karabelo.
Disebedisweng tse kang Chemical Vapor Deposition (CVD), Metal-Organic Chemical Vapor Deposition (MOCVD), le Rapid Thermal Processing (RTP), mosebetsi wa mantlha wa sethala sa carrier ke ho tshwara di-wafer tsa semiconductor ka mokhoa o sireletsehileng ha di ntse di sebetsa e le motjheso wa mantlha. Ha e sebedisa mekgwa ya ho futhumatsa ya induction ya Graphite susceptor, karolo ena e monya ka potlako matla a Radio Frequency (RF) kapa microwave electromagnetic mme e a fetola matla a mocheso a tshwanang, e leng se thusang taolo ya mocheso e nepahetseng ya boemo ba millisecond hodima bokahodimo ba wafer.
2. Sebopeho sa thepa le sebopeho sa Micro: Hobaneng ho na le Isostatic Graphite + CVD SiC Coating?
Graphite e tala e sa koaheloang e ke ke ea pholoha sepakapaka se matla sa lik'hemik'hale le litlhoko tse thata tsa bohloeki ba tlhahiso ea semiconductor. Li-susceptor tsa Graphite tsa sejoale-joale tse sebetsang hantle li sebelisa sistimi e ikhethileng ea motsoako oa mekhahlelo e 'meli:
(1) Karolo e ka tlaase ea Graphite e Hloekileng Haholo
Karolo e ka sehloohong e etsoa ka ho sebelisa graphite e hatelletsoeng ka isostatically. Ka ho ntlafatsa ho lumellana ha graphite le kristale e nyane ea graphite, e fihlella thepa ea 'mele ea isotropic, masoba a tlase, le matla a phahameng a ho flexural a mechini, e fana ka motheo o motle bakeng sa li-geometries tse rarahaneng tsa pokothong ea wafer tse nyane.
(2) Sekoahelo se Sireletsang sa CVD Silicon Carbide (SiC)
Ka ho sebedisa Chemical Vapor Deposition, lera le teteaneng haholo la poly-crystalline B-SiC (hangata e teteaneng ka 10 ho isa ho 100 um ka bohloeki ba 99.999%) le hodiswa hodima substrate ya graphite. Seaparo sena se kwahela ka botlalo di-micro-pores tsa bokahodimo ba graphite, se thibela ho tsholoha ha di-particle, mme se fana ka thibelo e ke keng ya kenngwa kgahlanong le dikhase tse senyang tse kang HCI, NH,, le metswako ya fluorinated.
3. Litšobotsi tsa Bohlokoa tsa 'Mele le Litlhaloso tsa Thepa
Ho latela liteko tse matla tsa laboratori le litekanyetso tsa indasteri tse netefalitsoeng, li-susceptor tsa Graphite tse koahetsoeng ka bohloeki bo phahameng li bontša liparamente tse latelang tsa bohlokoa tsa 'mele:
| Paramethara ea 'Mele / ea Lik'hemik'hale | Boleng bo Tloaelehileng ba Referense | Melemo ea Ts'ebetso le Tšusumetso ea Ts'ebetso |
| Kakaretso ea Molora (Bohloeki) | < 5 ppm (Ref: XR Graphite Spec Data) | E felisa tšilafalo ea tšepe, e netefatsa hore likarolo tsa epitaxial ha li na sekoli. |
| Botebo bo Bonahalang | Substrate: 1.85 g/cm³ | SiC: 3.21 g/cm³ | Ho se tsitse ha mocheso ho tlase bakeng sa lebelo le potlakileng la ho kheloha hammoho le khetla e sa keneng metsi. |
| Matla a ho Tenyetseha | ≥ 49 MPa (Sebaka se ka tlase) | ~450 MPa (SiC) | E mamella khatello e matla ea mocheso le ho jara li-wafer tse boima ntle le ho sotha. |
| Mocheso o Moholo oa ho Sebetsa | > 1500°C – 1800°C | E boloka botsitso ba sebopeho nakong ea kholo ea kristale ea SiC mochesong o phahameng. |
| Ho khanna ha mocheso | ~116 W/m·K (100 kcal/cm·h·°C) | E hasanya ka potlako libaka tse chesang tse fumanehang sebakeng seo, e fihlella gradient e nyane ea mocheso (ΔT). |
| Ho hanyetsa motlakase | ~11 μΩ·m | E ntlafalitsoe bakeng sa ho futhumatsa ha Graphite susceptor e sebetsang hantle haholo. |
Melemo ea Boenjiniere ba Motheo:
1. Khanyetso e Phahameng ea ho Tšoha ha Thermal: E khona ho mamella potoloho e potlakileng ea ho futhumatsa le ho pholisa e tsoelang pele (kaholimo ho 1500°C) ntle le ho petsoha kapa ho arohana.
2. Ho se sebetse hantle ha lik'hemik'hale: E sireletsehile ka ho feletseng ho senyeheng ke H2, NH3, likhase tsa silane, le lintho tse hloekisang lik'hemik'hale tse matla.
3. Ho bapisa Coefficient of Thermal Expansion (CTE): Ts'ebetso ea ho beha SiC ea VET Energy e tsamaisana le boitšoaro ba katoloso ea mocheso oa sekoahelo sa SiC le karolo ea graphite, e thibelang ho robeha ha sekoahelo maemong a mocheso o feteletseng.
4. Karolo le Litšebeliso Ts'ebetsong ea Semiconductor
Li-susceptor tsa Graphite tse tšepahalang haholo li sebetsa e le likarolo tsa motheo tse nolofalletsang mehatong e 'maloa ea bohlokoa ea tlhahiso ea li-semiconductor:
(1) CVD le MOCVD Epitaxial Growth (Epi)
Tlhahisong ea GaN LED, epitaxy ea sesebelisoa sa motlakase sa SiC, le kholo ea epi-ea silicon wafer, botenya ba filimi le ho tšoana ha doping li itšetlehile haholo ka ho tšoana ha tšimo ea mocheso. Li-susceptor tsa graphite li aba mocheso ka ho lekana holim'a litlhophiso tsa wafer e le 'ngoe kapa tse ngata nakong ea ho potoloha, li hatella ho inama kapa mela ea wafer e bakoang ke khatello ea mocheso.
(2) Kgolo ya Kristale e le Nngwe (Mokgwa wa PVT)
Nakong ea kholo ea kristale ea Silicon Carbide (SiC) le Sapphire ka Physical Vapor Transport (PVT), susceptor e hlalosa gradient ea sebaka sa mocheso, e tataisa ka kotloloho ho thehoa ha ingot ea kristale e le 'ngoe le ho fokotsa bongata ba ho falla.
(3) Ts'ebetso e Potlakileng ea Thermal (RTP) le Annealing
Ka ho sebelisa mocheso o sebetsang hantle oa Graphite susceptor induction, sethala sena se nolofalletsa linako tsa karabelo ea mocheso tse potlakileng haholo tse hlokahalang bakeng sa ho kenngoa ha lattice le ho thehoa ha junction kamora ho kenngoa.
5. Hobaneng o lokela ho kgetha VET Energy?
Ka litlhoko tse hlokang tlhokomelo bakeng sa ho mamella ketane ea phepelo, bohloeki bo feteletseng, le bophelo bo bolelele ba tšebeletso,Matla a VETe hlahella e le molekane ea tšepahalang oa boenjiniere ba lefats'e:
1. Ho sebetsa ka mokhoa o nepahetseng oa Micro-Machining: Litsi tsa ho sebetsa tsa CNC tse nang le li-axis tse ngata li nolofalletsa lipokotho tse rarahaneng tsa wafer, li-groove tse nyane, le liteishene tsa khase tse ikhethileng tsa aerodynamic tse nang le mamello ho fihlela boemong ba micrometer.
2. Advanced Dense CVD SiC Deposition: Ts'ebetso ea rona ea CVD e ikhethang e fihlella lipente tsa SiC tse teteaneng haholo, tse benyang joaloka seipone tse atolosang nako ea ts'ebetso ea potoloho ea mocheso ka ho feta 30%.
3. Tikoloho ea Ts'ebetso e Hloekileng Haholo: Tiisetso ea ho hloekisa ka botlalo le ho sebetsana le kamore e hloekileng ke hore molora oohle o bolokoa ka tlase ho 5 ppm, o khotsofatsa semiconductor e thata ea OEMMaemo a Fab.
4. Litšenyehelo tse Ntlafalitsoeng tsa Beng (CoO): VET Energy e fana ka linako tse potlakileng tsa ho etella pele hammoho le karolelano ea tlholisano ea theko le ts'ebetso, e thusang baetsi ba li-chip ho fokotsa litšenyehelo tse ka sebelisoang.
Nako ea poso: Phato-14-2026
