Guhitamo ibikoresho byo gusiga CVD: Kugereranya imikorere n'ikoreshwa rya TiN, Al2O3, SiC

Guhitamo ibikoresho byiza byo gusiga CVD ni ingenzi cyane mu kunoza imikorere y'ibice no kuramba kwabyo. Iyi nyandiko igereranya neza Titanium Nitride (TiN), Aluminium Oxide (Al2O3), na Silicon Carbide (SiC) CVD coatings kugira ngo iyobore guhitamo ibikoresho bikoreshwa mu nganda runaka. Gusobanukirwa imiterere itandukanye y'imikorere ya buri gikoresho ni ingenzi mu gufata ibyemezo bifatika. Isoko mpuzamahanga ry'imyambaro ya CVD ryagezweho.miliyari 20.38 z'amadolari y'Amerika mu 2023, hamwe n’ibiteganyijwe bigaragaza ko izamuka rizagera kuri miliyari 44.2 z’amadolari y’Amerika mu 2032, bigaragaza ko izamuka ry’ubukungu ku kigero cya 7.58% mu mwaka mu gihe cy’iteganyagihe.

Ibintu by'ingenzi byakunzwe

• Gusiga irangi rya CVDnka TiN, Al2O3, na SiC bituma ibice bikomera kandi bikamara igihe kirekire.
• Irangi rya TiN ni ryiza ku bikoresho no ku mitako; rirakomeye kandi ntirishobora kwangirika.
• Irangi rya Al2O3 rikora neza ahantu hashyushye cyane kandi rirwanya imiti; ririnda ibice byaryo ingese.
• Irangi rya SiC ni ryiza cyane ku bushyuhe bukabije n'imiti, nko mu gukora chips za mudasobwa; ni ryiza cyane kandi rikomeye.
• Guhitamo irangi rikwiye biterwa n'icyo igice kigomba gukora n'aho kizakoreshwa.

Gusobanukirwa ikoranabuhanga ryo gusiga CVD

Gukuraho umwuka w'ubushyuhe mu mubiri (CVD) ni iki?

Gukuraho umwuka w’ubumara mu buryo bwa Chemical Vapor (CVD) ni uburyo buhambaye bushyira uduce duto tw’ibikoresho bikomeye ku kintu gikozwe mu buryo bwa "substrate" uhereye ku gice cy’umwuka. Ubu buryo bukoresha urukurikirane rw’ibikorwa bya chemical biba ku buso bw’ikintu cyangwa hafi yacyo. Ibikorwa by’ingenzi bya chemical muri CVD birimogusenyuka k'ubushyuhe, kugabanya, ogisijeni, no kwirema kw'ibintu bivanze. Izi ngaruka akenshi ziba zirimo ingaruka zo mu gihe cy'umwuka, aho ubwoko bw'ibinyabuzima biri hagati buvuka binyuze mu ngaruka zo mu gihe cy'ibinyabutabire. Nyuma y'ibyo, ingaruka zo ku buso zijyanye no gukwirakwira no gukora kw'izi ngaruka ku buso bw'ubutaka, biganisha ku gukura kw'urushundura rwifuzwa. Izindi ngaruka zisanzwe zirimohydrolysis, pyrolysis, no kwimuka.

Impamvu irangi rya CVD ari ingenzi mu kunoza ibikoresho

Irangi rya CVD ni ingenzi cyane mu kongera imiterere y'ibikoresho mu nganda zitandukanye. Ritanga inyungu zikomeye ugereranyije n'izindi koranabuhanga zo gusiga. Urugero, irangi rya CVD ririndaogisijeni na kwangirika, kongera igihe cyo kubaho kw'ibice. Abakora bashobora guhindura izi mpapuro kugira ngo zigere ku ntego zihariye z'imikorere, nko kugera ku kudakora neza kw'ibinyabutabire. Iri koranabuhanga rirushaho kunoza imikorere n'imiterere y'impapuro zishyirwa mu buryo bw'ubuvuzi, rikongera ubushobozi bwo guhuza ibintu, kudasaza, gukomera no kuramba. CVD ni nziza mu buryo bujyanye n'imiterere, itanga imiterere imwe ya filime ndetse no mu bice by'imbere n'inyuma bigoye. Ibi bituma habaho urwego rumwe rw'ibikoresho ku buso bwose bw'impapuro zishyirwamo. Ibice by'umwimerere bifite imyuka myiza bituma impapuro zishyirwamo zifite ubuziranenge buhebuje. Bitandukanye n'uburyo bwinshi bwa PVD, inzira ya CVD nintibigarukira gusa ku gukoresha umurongo ugaragara, bigatuma ibice byose by'igice bigumaho, harimo n'imigozi n'imyobo idakingiye. Iyo myenda ifatana n'ubuso mu gihe cyo gukora, bigatuma habaho gufatana neza ugereranije n'imyambaro isanzwe ya PVD cyangwa ikoreshwa mu bushyuhe buke. Gutunganya imyuka ibanziriza iyi mbere bituma imashini zigumaho zidashira neza, zifite ubushobozi bwo gushonga cyane, zirwanya ingese, cyangwa zifite ubuziranenge bwinshi.

Irangi rya Titanium Nitride (TiN) CVD: Imikorere n'Imikoreshereze

Imikorere y'ingenzi y'ipfundikizo rya TiN CVD

Irangi rya Titanium Nitride (TiN) CVD rigaragaza imikorere myiza cyane. Rifite ubukana budasanzwe, ubusanzwe buri hagati ya 2000 na 2500 HV, ibyo bikaba byongera cyane ubukana bwo kwangirika. Ubu bukana bwinshi butuma ibice bikomera cyane mu guhangana n'imbaraga zo kwangirika no kwangirika. TiN kandi itanga ubukana bwiza bwa shimi, irwanya ingaruka z'ibintu byinshi byangiza. Irangi ryayo rike rifasha kugabanya ubushyuhe no kunoza imikorere. Byongeye kandi, irangi rya TiN rifite ibara ryiza rya zahabu, rituma rikwiriye gukoreshwa mu mirimo yo gushushanya. Irangi rigumana ubuziranenge n'imikorere yaryo ku bushyuhe bwinshi, nubwo ubukana bwa ogisijeni butari hejuru nk'ibindi bikoresho bimwe na bimwe.

Uburyo busanzwe bwo gusiga TiN CVD

Inganda zikoresha cyane irangi rya TiN CVD mu bikorwa bitandukanye by'ingenzi bitewe n'imiterere yaryo ikomeye. Abakora bakunze gukoresha TiN kuriibikoresho byo gukata, nk'imashini zitobora, inganda zitunganya ibyuma, n'ibyuma by'inkero, kugira ngo bongere igihe cyabo cyo kubaho no kunoza imikorere yo gukata. Ibikoresho byo kwa muganga nabyo bigira uruhare mu gusiga TiN, bikongera ubushobozi bwo guhuza umubiri no kudashira. Ibikoresho byo mu kirere bikoresha TiN kubera kuramba kwayo no kurinda imikorere yayo mibi. Byongeye kandi, irangi ryiza rya zahabu rituma TiN iba amahitamo akunzwe yo gusiga amarangi ku bintu nk'imitako n'amasaha.

Ibyiza n'imbogamizi bya TiN CVD Coating

Irangi rya TiN CVD ritanga inyungu zikomeye. Ryongera cyane igihe cyo gukoresha ibikoresho n'ibice byaryo, rigabanya ikiguzi cyo gusimbuza n'igihe cyo kudakora. Irangi ritanga ubushobozi bwo kwangirika no kudashira neza, ni ingenzi ku bice bihura n'ibibazo bihoraho. Gufata neza ibintu bitandukanye bituma habaho isano yizewe kandi irambye. Ariko, irangi rya TiN rifite imbogamizi. Rigaragaza ubushyuhe buringaniye ugereranije na bimwe mu bikoresho bya kera, aho ogisijeni iba ku bushyuhe buri hejuru ya 500°C mu kirere. Nubwo ikomeye, ishobora kwangirika, bishobora gutuma icikagurika bitewe n'imizigo ikomeye. Uburyo bwo kuyishyiramo akenshi busaba ubushyuhe bwinshi, bushobora kugabanya ikoreshwa ryayo ku bikoresho bimwe na bimwe bya substrate.

Igikoresho cya CVD cya Aluminium Oxide (Al2O3): Imikorere n'Imikoreshereze

Imikorere y'ingenzi y'imvange ya Al2O3 CVD

Irangi rya CVD rya aluminiyumu Oxide (Al2O3) rizwiho ubwiza bwaryo budasanzwe, bigatuma rigira agaciro gakomeye mu nganda zitandukanye. Rigaragaza ubukana budasanzwe kandi rituma ubushyuhe buhora buhagaze neza.

Izi mpako zitanga kandi ubukana budasanzwe bwa shimi, zirwanya ibitero by’ibintu byinshi bihumanya. Ubukana bwazo bukabije bw’amashanyarazi butuma ziba ibyuma bikingira amashanyarazi neza cyane. Byongeye kandi, mpako za Al2O3 zitanga ubukana butangaje bwa ogisijeni, cyane cyane iyo ubushyuhe buri hejuru, zirinda ibikoresho biri munsi yabyo kwangirika.

Uburyo busanzwe bwo gukoresha Al2O3 CVD Coating

Udupira twa Al2O3 dukoreshwa cyane mu bice bikomeye aho kwangirika no kwangirika ari ibintu bihangayikishije cyane.ibisubizo byashyizwehomu kurinda ibintu bitandukanye. Abakora ibikoresho bashyira Al2O3 coatings ku duce twa tungsten kugira ngo bongere ubushobozi bwo kurwanya oxidation ku bushyuhe buri hejuru ya 800 °C, cyane cyane burenga 1000 °C, aho tungsten ikunze gukora no gushyira WO3 mu mwanya wayo. Izi coatings kandi zigabanya neza igipimo cya oxidation cya alloys γ-TiAl kiri hagati ya 900–1000 °C.Al2O3 ni uburyo busanzwe bwo gusiga ibikoresho bya karubine bikozwe muri sima, zikora mu bihe bisaba gukomera neza, kudashira, gufatana neza, no kudahungabana k'ubushyuhe. Byongeye kandi, abashakashatsi batekereza ko Al2O3 ikoreshwa mu gusigakurinda lisansi mu byuma bikonjesha vuba (LFRs)bitewe nuko zirwanya ingese cyane mu bidukikije bya kirimbuzi.

Ibyiza n'imbogamizi bya Al2O3 CVD Coating

Irangi rya Al2O3 ritanga ibyiza bikomeye, birimo ubukana bwiza, kudahindagurika mu bushyuhe bwinshi, no kudakomera cyane mu binyabutabire no mu bimera. Iyi miterere yongerera igihe cyo kubaho kw'ibice mu bihe bikomeye. Ariko, irangi rya Al2O3 rinagaragaza imbogamizi zimwe na zimwe.

• Ubushyuhe bwa substrate kuri CVD, akenshi hafi ya700 °C, ifite uburebure buhagije bwo gushonga aloyi za aluminiyumu. Ibi bigabanya ubwoko bw'ibikoresho bishobora kwakira irangi.
• Ubu bushyuhe bwinshi bwo gukora ntabwo bwiza ku bice bya mekanike bitwikiriye, cyane cyane ibikozwe mu byuma byoroshye bifite aho bishongesha hato, nka aluminiyumu, bikoreshwa mu kugabanya uburemere bw'imashini.
• Ubushyuhe busanzwe bwo hejuru bwo gushyiramo ibintu hafi ya1050°CKu bijyanye n'imyambaro ya Al2O3 byabangamiye cyane iterambere ry'imyambaro myinshi ivanze, nka TiC/TiN/TiCN/Al2O3.
• Kugabanya ubushyuhe bwa Al2O3 byagabanya kandi stress zisigaye mu gitambaro gikunda gutera gucika.

Irangi rya Silicon Carbide (SiC) CVD: Imikorere n'Imikoreshereze

Imikorere y'ingenzi y'imvange ya SiC CVD

Irangi rya Silicon Carbide (SiC) CVD rifite imiterere itangaje, ituma riba ryiza cyane mu bidukikije bikomeye. Iri rangi rigaragaza ubukana budasanzwe, akenshi kuva kuri2000 to 2800 HV(Ubukomere bwa Vickers). Ubu bubabare bwinshi butanga ubushobozi bwo kwangirika no kudashwanyagurika neza. SiC ifite kandi ubushobozi bwiza bwo gutwara ubushyuhe, akenshi bugera hagati ya 116 W/mK na300 W/mK. Iyi miterere ituma ubushyuhe bugabanuka neza. Byongeye kandi, irangi rya SiC ritanga ubuziranenge budasanzwe bwa shimi n'ubuziranenge bukabije. Rirwanya imikorere ya aside, alkali, n'ibindi binyabutabire bikaze, bigatuma habaho ubusugire mu bidukikije byangiza. Uku kudakomera kwa shimi, hamwe no kudahinduka mu bushyuhe bwinshi, bituma SiC iba amahitamo akomeye y'ibikoresho.

Uburyo busanzwe bwo gukoresha SiC CVD Coating

Inganda zikoresha cyane irangi rya SiC mu bikorwa bisaba imikorere myiza n'ubwizerwe. Mu by'indege, abakora ibikoresho bakoresha SiC muibice bya moteri, imbogamizi z'ubushyuhe, ibyuma bya turbine, ubushyuhe, ibyuma bikingira, n'imizingo ya roketi. Ibi bice bikora mu bushyuhe bukabije n'ibihe bikomeye. Inganda za semiconductor nazo zishingikiriza cyane kuri SiC. Irinda ibikoresho byo gutunganya wafer, harimo n'ibikoresho byo gutwara wafer, ibyumba byo gushushanya, n'ibyumba byo kubikamo ibintu mu nganda za LED na semiconductor. SiC ikoreshwa kandi musemiconductors zifite imbaraga nyinshi n'amajwi menshi, amplifiers za RF, n'ibikoresho byo guhinduranya, aho imiterere y'amashanyarazi n'ubuziranenge bwayo ari ingenzi cyane.

Ibyiza n'imbogamizi bya SiC CVD Coating

Irangi rya SiC ritanga inyungu zikomeye.Isuku yo hejuru cyane ni ingenzi cyane mu kubungabunga ibidukikije bidafite umwandacyane cyane mu nganda zikora ibikoresho bya semiconductor. Bitanga uburambe mu bidukikije bikomeye, bikingira ibikoresho nk'ibihindura ubushyuhe n'ibitera ingufu mu nganda z'ingufu imiti yangiza n'ubushyuhe bukabije.Ubusembwa bwa SiC mu buryo bwa shimi butuma habaho ituze, kongera igihe cyo kumara ibikoresho no kugabanya ibikenewe mu kubungabunga. Isuku nyinshi zigabanya umwanda, bikongera imikorere mu bikorwa by’ingenzi. Ariko, irangi rya SiC rifite imbogamizi. Ubushyuhe bwinshi busabwa kuri CVD SiC bushobora kugabanya ikoreshwa ryayo ku bikoresho bimwe na bimwe bya substrate. Iyi nzira ishobora kandi kuba igoye kandi ihenze ugereranije n’ubundi buryo bwo gusiga.

Igereranya ry'imikorere ya CVD Coatings: TiN vs. Al2O3 vs. SiC

Isesengura rigereranya ubukomere n'ubudahangarwa bw'ibice

Buri gipfunyika cya CVD gitanga ibyiza bitandukanye mu gukomera no kudashira. Igipfunyika cya Titanium Nitride (TiN) gikunze kugaragaza gukomera kwa Vickers kuva kuri 2000 kugeza 2500 HV. Ibi bitanga uburinzi bwiza ku kwangirika. TiN kandi igaragazaibipimo byo gushwanyagurika biri hagati ya 0.4 na 0.9. Ariko, igereranya ry'ingano ritaziguyeku gipimo cyo kwangirika cyangwa coefficients yo gushwanyagurika hagati ya TiN, Al2O3, na SiC CVD coating ntabwo byagaragajwe cyane mu bushakashatsi bumwe kandi bwuzuye. Coating za Aluminium Oxide (Al2O3) muri rusange zifite ubukana bwa Vickers bugera kuri 1800 HV 0.5, butanga ubukana bwiza bwo kwangirika, cyane cyane mu bikorwa by'ubushyuhe bwinshi. Coating za Silicon Carbide (SiC) zigaragara cyane mu bukana budasanzwe, ubusanzwe kuva kuri 2000 kugeza 2800 HV. Ibi bituma SiC irwanya cyane kwangirika no kwangirika, akenshi irenga TiN na Al2O3 mu bihe bikomeye cyane.

Isesengura rigereranya ubushyuhe buhamye n'ubudahangarwa bw'umwuka

Gukomera ku bushyuhe no kudakomera ku bidukikije ni ibintu by'ingenzi mu gukoresha ubushyuhe bwinshi. Imyambaro ya TiN igaragaza ko ubushyuhe buhagaze neza. Itangira gushonga mu kirere ku bushyuhe buri hejuru ya 500°C. Mu bihe birimo ogisijeni, imyambaro ya TiNogisijeni yuzuye kandi ikaranze mu masaha amagana makeIyo bihuye n'ahantu hashyushye cyane mu mazi. Ibi bigaragaza ko nta bushyuhe bwinshi burimo. Irangi rya aluminiyumu Oxide (Al2O3) ritanga ubushyuhe buhamye kandi rirwanya ogisijeni. Ririnda neza ibikoresho biri munsi y'ubutaka ku bushyuhe burenga 1000°C, bigatuma biba byiza mu bidukikije bishyushye cyane. Irangi rya Silicon Carbide (SiC) naryo rigaragaza ubushyuhe burambye kandi rirwanya ogisijeni. Abashakashatsi bagaragaje ko rituma ibintu bidashobora gushyuha cyane.yagereranije imyitwarire ya SiC yo kwangirika kw'amazi n'ubushyuhe bwa Al2O3, bigaragaza imikorere myiza ya SiC mu bidukikije bishyuha cyane n’ibinyabutabire. SiC igumana ubuziranenge bwayo n’ubushobozi bwayo bwo kurinda ubushyuhe buri hejuru cyane, akenshi ikarenza aho TiN yangirika.

Isesengura rigereranya ubukana bw'ibinyabutabire n'imiterere y'amashanyarazi

Ubudakora neza kw'ibinyabutabire n'imiterere y'amashanyarazi y'ibi binyabutabire biratandukanye cyane, bigira ingaruka ku buryo bikoreshwa mu buryo bwihariye. Ibinyabutabire bya TiN bitanga ubudakora neza bw'ibinyabutabire, birwanya ibintu byinshi byangiza. Mu by'amashanyarazi, TiN nini ifite ubudakora neza bw'amashanyarazi hagati ya 1.0 × 10⁻⁷ na 4.0 × 10⁻⁷ Ω·m. PVD TiN igaragaza ubudakora neza kuva kuri 3.0 × 10⁻⁷ kugeza kuri 1.0 × 10⁻⁶ Ω·m. CVD TiN ifite ubudakora bwiza kuva kuri 2.0 × 10⁻⁶ kugeza kuri 1.0 × 10⁻⁴ Ω·m. Ibi bishyira TiN mu cyiciro cya semiconductor cyangwa semi-metallic.

Udupira twa aluminiyumu Oxide (Al2O3) ntabwo dukoreshwa cyane mu binyabutabire, twirinda ibitero biva kuri aside nyinshi, alkali, n'ibindi binyabutabire bikomeye. Al2O3 ni icyuma gikomeye gikingira amashanyarazi. Filimi nto za Al2O3 zihingwa binyuze mu gukwirakwiza Atomic Layer Deposition (ALD) zigaragaza imiterere ya dielectric ya 6.7 kuri filime 120 Å z'ubugari. Ubucucike bw'amashanyarazi asohoka muri filime za Al2O3 bugabanuka uko ubunini bwa filime bwiyongera, aho agaciro ka 1 nA/cm² kuri filime nini. Voltage ya Fowler-Nordheim (FN) muri filime za Al2O3 yiyongera uko ubunini bungana, kuva kuri 3 V kuri filime 60 Å kugeza kuri 5.5 V kuri filime 184 Å. Udupira twa Silicon Carbide (SiC) natwo dufite ubushobozi budasanzwe bwo kudakoresha chemical kandi dufite ubuziranenge buhanitse cyane. Zirwanya imikorere y'ibintu byinshi bishobora kwangiza. SiC ishobora gukora nk'icyuma gikingira cyangwa gikingira bitewe n'imiterere yayo ya doping n'icyunyungugu. Ubushobozi bwayo bwo kwirinda amashanyarazi ni ingenzi mu ikoreshwa rya semiconductors zifite imbaraga nyinshi kandi zifite frequency nyinshi.

Ibipimo by'inyungu ku giciro kuri buri gikoresho cyo gusiga CVD

Gusuzuma igipimo cy'ikiguzi n'inyungu kuri buri gikoresho cyo gusiga CVD ni ingenzi kugira ngo hafatwe ibyemezo birambuye. Igipimo cya Titanium Nitride (TiN) muri rusange ni amahitamo ahendutse. Gitanga uburinganire bukomeye mu gukomera, kudashira, no kurabagirana neza nk'umuhondo. Ibi bituma TiN iba amahitamo meza ku giciro gikenewe kugira ngo ikoreshwe mu buryo bwiza kandi irinde ubushyuhe bwinshi cyangwa imiti. Ikoreshwa cyane mu gukata ibikoresho no mu mitako bigaragaza igipimo cyiza cy'imikorere n'ikiguzi ku bikenewe mu nganda nyinshi.

Ubusanzwe irangi rya aluminiyumu Oxide (Al2O3) risaba ishoramari ryinshi ugereranije na TiN. Ariko, ubushyuhe bwaryo buhamye, ubushobozi bwa oxidation, ndetse n'ubudakoresha imiti akenshi bitanga impamvu y'iri kiguzi cyiyongereye. Ku ikoreshwa mu bidukikije bishyuha cyane, nk'ibikoresho by'itanura cyangwa ibikoresho byo guca ibintu bigezweho, Al2O3 yongera igihe cyo kubaho kw'ibice. Ibi bigabanya ikiguzi cyo gusimbuza n'ikiguzi cyo kubungabunga uko igihe kigenda gihita. Kuramba no kurinda Al2O3 bitanga uburyo bwo kuzigama igihe kirekire, bigatuma iba amahitamo meza nubwo ikiguzi cyayo kiri hejuru.

Irangi rya Silicon Carbide (SiC) rikunze kugira ikiguzi kinini cyo gukoresha mu bikoresho bitatu. Uburyo bugoye bwo gushyiramo ibintu hamwe no gukenera ubuziranenge buhanitse cyane bigira uruhare muri iki giciro. Nubwo ihenze cyane, SiC itanga imikorere idasanzwe mu bidukikije bigoye cyane. Ubukana bwayo budasanzwe, kudakora neza kwa shimi, no gutwara ubushyuhe bituma iba ingenzi mu bikorwa by'ingenzi mu gutunganya ibikoresho bya semiconductor, mu by'indege, no mu nganda za kirimbuzi. Muri izi nzego, ikiguzi cyo kwangirika kw'ibice cyangwa kwanduzwa n'ibintu bikoreshwa mu gutwikira ibintu kiruta cyane ikiguzi cya mbere cyo gutwikira. Kuramba no kurinda kwa SiC bitanga icyizere cy'imikorere n'umutekano, bitanga inyungu nini ku ishoramari ku bisabwa byihariye kandi bifite imikorere myiza.

Ibintu Bigira Ingaruka Ku Guhitamo Ibikoresho Byiza Bikoreshwa mu Gusiga Irangi rya CVD

Guhitamo ibikoresho byiza byo gusiga CVD bisaba gusobanukirwa neza ibyo porogaramu isaba. Ibipimo byinshi by'ingenzi ni byo bigena uko ihitamo rigenda. Kuramba no kudashira ni ingenzi ku bice bihora bihura n'ibibazo byo gushwanyagurika cyangwa gushwanyagurika. SiC irakora neza muri ibi bice, itanga ubudashya bwo kwangirika, isuri, no gushwanyagurika bitewe n'imiterere yayo ikomeye, idafite imyenge kandi ifatana neza. Al2O3 inatanga ubudashya bwo kwangirika bwiza, cyane cyane iyo ubushyuhe buri hejuru, mu gihe TiN itanga uburinzi bwiza ku bintu bidakabije.

Ubuso butwikiriye kandi bugoye nabyo bigira uruhare runini. Ubusanzwe, irangi rya CVD rirakora neza cyanegusiga ibishushanyo mbonera by'imiterere y'ubutaka n'imbere bifite ubugari bumwe. Bitanga uburyo buhoraho bwo gukingira ahantu hatagaragara neza. Iki kintu ni ingenzi ku bice bigoye aho uburinzi bumwe bukenewe. Ubudahangarwa bw'ibidukikije n'imiti bw'igitambaro ni ikindi kintu cy'ingenzi. Ku bintu bikaze nka H₂S na aside zikomeye, SiC na Al2O3 bitanga ubudahangarwa bwiza bitewe n'imiterere yabyo idafite imyenge, bigatuma biba uruzitiro rukomeye.

Ubunini bw'igitambaro, ubusanzwe buri hagati ya mikoroni 25-75, burangana cyane mu mikoreshereze ya CVD. Ubu bunini buhamye butuma ubuso burushaho kuba bwiza kandi bushobora gusugurwa. Ubushyuhe bw'imikorere y'igitambaro bugira ingaruka zikomeye ku guhitamo ibikoresho. Al2O3 na SiC birakwiriye ubushyuhe bwinshi, bikingira ibikoresho bikomeye neza. Amaherezo, ikiguzi cyo gukoresha, nubwo kiri hejuru kuri bimwe mu bikoresho byo gusiga CVD, akenshi kigaragaza igihe kirekire no kurinda. Ibi bituma ishoramari rya mbere rigira akamaro mu kongera igihe cy'ibice no kwemeza ko imikorere yizewe mu nganda zikomeye.

Uburyo bwo Gukoresha CVD mu buryo Busanzwe: Guhitamo Uburyo Bwiza bwo Gusiga CVD

Gusiga CVD ku bikoresho byo gukata no gukora imashini byihuta cyane

Ibikoresho byo gukata no gukora ku buryo bwihuse bisaba kuramba cyane no kudashira. Ibi bikoresho bikora mu gihe hari ubushyuhe bwinshi n'ingufu, bigatuma ubuso budakingiye burushaho kwangirika. Guhitamo irangi rikwiye byongerera igihe ibikoresho bimara kandi bikongera imikorere myiza. Irangi rya Titanium Nitride (TiN) ryamaze igihe kinini rikoreshwa nk'ihame ku bikoresho byo gukata bisanzwe. Ritanga ubukana bwiza kandi rigabanya gushyuha, bifasha mu kwirinda kwangirika kw'ibikoresho imburagihe. Ariko, ikoreshwa ryihariye, cyane cyane ibyuma bikomeye, bisaba irangi rifite ubushyuhe bwinshi n'ubukonje.

Ku bijyanye no gukata ibyuma ku buryo bwihuse, irangi rya Aluminium Oxide (Al₂O₃) ritangaubushyuhe n'imiti bidasanzwe bihamyeku bushyuhe buri hejuru. Uku guhagarara neza bituma biba byiza mu kubungabunga ubuziranenge bw'ibikoresho mu gihe cy'ibikorwa bikomeye byo gukora imashini. Indi mpamvu ikomeye muri uru rwego ni Titanium Carbonitride (TiCN). Iyo ikoreshejwe muri CVD, TiCN itanga ubushobozi bwo kudashira neza. Iyi miterere igaragaza ko ari ingirakamaro cyane mu gukora imashini z'icyuma, aho ibintu bikomeye biri mu mashini bishobora kwangiza ubuso bw'igikoresho vuba. Izi myenda igezweho yemerera ibikoresho gukora ku muvuduko mwinshi no kugaburira, bigatuma umusaruro wiyongera kandi urangira neza ku bice byakozwe.

Gusiga CVD ku bidukikije byangiza ibidukikije

Ibice bikora mu bidukikije bya shimi bihura n’ibibazo bihoraho byo kwibasirwa n’ibiyobyabwenge, bishobora gutuma ibintu byangirika ndetse bikangirika vuba. Imyambaro yo kurinda ikoreshwa neza ni ingenzi kugira ngo irambe kandi ikomeze kuba ingirakamaro muri ibi bihe bikomeye. Imyambaro ya aluminium Oxide (Al₂O₃) na Silicon Carbide (SiC) CVD iratandukanye cyane kubera ko idakora neza mu bidukikije.

Irangi rya Al₂O₃ rigira akamaro kanini mu mazi akomeye cyane (SCW). Ibi bihe birimo ubushyuhe bwinshi, akenshi hafi ya500 °C, umuvuduko mwinshi wa 25 MPa, hamwe n'ibintu bikomeye bigabanya ubushyuhe. Ibipimo bya okiside bishingiye kuri alumina bizwi cyane mu kugabanya ubwoko butandukanye bwa ruswa mu bihe bya SCW. Ibi birimo gucikamo uduce duto, gucikamo uduce duto, na ruswa rusange, ibyo bikaba byagura igihe kirekire cy'ubuzima bw'ibice.

Irangi rya SiC ririnda cyane cyane ibintu bivanze na karuboni/karuboni (C/C) kugira ngo bitangirika ku bushyuhe bwinshi, cyane cyanehejuru ya 723 K, mu bidukikije birimo umwuka wa ogisijeni. Ubu burinzi ni ingenzi ku bidukikije bya C/C, kuko ikoreshwa ryabyo nk'ibikoresho by'ubwubatsi bishyuha cyane rishobora kugabanywa n'umwuka wa ogisijeni. Irangi rya SiC ceramic rinarinda ibidukikije bya C/C mu bidukikije birimo umwuka w'amazi.kuri 1773 KNubwo umwuka w'amazi ushobora kwihutisha ogisijeni ya SiC ceramics, binafasha mu ikorwa ry'urwego rw'ikirahure. Uru rwego rw'ikirahure rufasha gufunga no kurinda matrix ya C/C vuba, bigatuma habaho imikorere myiza ndetse no mu bihe bigoye byo guhumeka no mu bushyuhe bwinshi.

Irangi rya CVD rirwanya ubushyuhe bwinshi

Ibikoresho bihura n'ubushyuhe bukabije n'ikirere gitera ogisijeni bisaba irangi rishobora kwihanganira imimerere mibi ritangiritse. Kurwanya ogisijeni igihe kirekire ku bushyuhe burenze 1000°C ni ikintu cy'ingenzi mu bikorwa byinshi byo mu kirere, ingufu, n'inganda.

Irangi rya NiAl ryateguwe na CVD rigaragaza ko rifitanye isano rikomeye n'ubutaka ndetse n'ubucucike bwinshi. Iyi miterere igira uruhare mu gutuma habaho ubudahangarwa bwiza bwo kurwanya ubushyuhe bwinshi.hejuru ya 1100°C, irangi rya nikeli aluminide rikora vuba igipimo cya α-Al₂O₃ kidahindagurika cyane mu buryo bwa thermodynamic. Iki gipimo ni ingenzi cyane mu gutanga uburinzi bw'igihe kirekire ku bintu biri munsi yacyo.

Irangi rya Silicon Carbide (SiC) naryo rigaragaza ubudahangarwa bwiza bwo kurwanya ogisijeni. Ibi ribigeraho rikora urwego rw'ikirahure rwa SiO₂ rurinda. Uru rwego rumeze nk'ikirahure rushobora gusana neza inenge nk'imiturire n'imyenge, rugakomeza ubuziranenge bw'irangi. Urugero, irangi rya SiC ryagaragaje ko ryagabanutse ibiro gusa.0.48% by'uburemerenyuma y'ingendo icyenda z'ubushyuhe hagati ya 1873 K (1600°C) n'ubushyuhe bw'icyumba. Ibi bisubizo bigaragaza ko ogisijeni idashobora kuzura neza ndetse no mu gihe cy'ihindagurika rikomeye ry'ubushyuhe. Byongeye kandi, irangi rya SiC/B/SiC ry'urwego rwinshi ritangauburinzi buhanitse bwa ogisijeniku binyabutabire bya C/SiC ugereranije n'ibinyabutabire bya SiC by'urwego rutatu. Izi sisitemu z'urwego rwinshi zikora neza mu bushyuhe bwinshi, kuva kuri 700°C kugeza 1500°C. ZrB₂-SiC nayo izwi nk'ishingiroibumba rishyushye cyane (UHTC)Itanga ubushobozi bwo kurwanya ogisijeni n'ubudahangarwa mu kirere gishyuha cyane, bigatuma ikoreshwa mu buryo busaba imbaraga nyinshi.

Irangi rya CVD rikoreshwa mu gukingira amashanyarazi no kurinda kwambara

Ibice bikunze gukenera ubushyuhe bw'amashanyarazi no kurinda kwangirika gukomeye, cyane cyane mu bidukikije bigoye. Ubushyuhe bwa Silicon Carbide (SiC) ni bwiza muri ubu buryo bubiri. Butanga imicungire myiza y'ubushyuhe n'ubushyuhe bw'amashanyarazi, ingenzi cyane ku buryo sisitemu zizewe kandi ziramba mu modoka zikoresha amashanyarazi n'izikoresha ikoranabuhanga. Urugero, ubushyuhe bwa SiC ni ingenzi musisitemu zo gucunga bateri n'ibikoresho by'ikoranabuhanga bikoresha ingufu za voltage nyinshimu rwego rw'imodoka. Izi porogaramu zisaba ko ubushyuhe bukwirakwira neza mu gihe hagumaho amashanyarazi akwirakwira.

SiC coatings ikoreshwa cyane mu bikoresho by'ikoranabuhanga bikoresha ubushyuhe bwinshi. Itanga imicungire myiza y'ubushyuhe mu gihe igenzura ko amashanyarazi ashyirwa mu buryo butandukanye mu bikoresho by'ikoranabuhanga bikoresha ingufu, mu gupakira ibikoresho by'ikoranabuhanga, no mu bikoresho by'amashanyarazi. SiC ikora nk'ibikoresho byiza ku bikoresho by'amashanyarazi bikoresha ingufu mu bintu bisaba ubushyuhe bwinshi aho ibikoresho bisanzwe by'amashanyarazi byangirika. Itanga imbaraga nyinshi za dielectric, akenshi kuva kuri15-25 kV/mmUretse imiterere y'amashanyarazi, irangi rya SiC ritanga uburinzi budasanzwe mu nganda. Ibice birinzwe na irangi rya SiC bigaragaza ko ubuzima bwabyo bwarushijeho kuba bwiza, akenshi inshuro 3-5 ugereranyije n'ibikoresho bisanzwe, mu mikorere yo gupompa ibintu bito. Iri terambere rituruka ku miterere yabyo ikomeye, idatera imyenge kandi ikagabanuka. Mu buryo nk'ubwo, irangi rya SiC ryongera ubushobozi bwo kudashira mu bintu bikurura cyane nko mu mikorere yo guturitsa umucanga. Ibice bya value, pompe seal, nozzles, n'ubuso bw'imyenda nabyo bigira uruhare mu mikorere idasanzwe ya irangi rya SiC, bigatuma irangi rya mekanike rirushaho kuba ryiza nk'uburyo bw'ibanze bwo gucika intege.

Gusiga CVD mu gutunganya semiconductors no gukenera ibikoresho byo mu rwego rwo hejuru

Inganda za semiconductor zisaba ibikoresho bifite ubuziranenge buhanitse cyane kandi bidafite ubuziranenge budasanzwe bwa shimi kugira ngo birinde kwanduza no kwemeza ko inzira zikora neza. Solid Silicon Carbide (CVD SiC) ni yo mahitamo y'ibanze ku bice bigize ibikoresho bya semiconductor. Ibi birimo ibice nka RTP / EPI rings and bases, hamwe n'ibice by'ubuso bwa plasma etch. Abakora ibikoresho bakunda CVD SiC bitewe n'ubuziranenge bwayo buhanitse cyane,birenga 99.9995%.Inatanga kandi ubushobozi bwo kurwanya imiti ihumanya ikirere mu buryo budasanzwe. Byongeye kandi, CVD SiC igabanya umusaruro w’uduce duto kuko tutagira ibice bya kabiri ku nkengero z’uduce duto. Iki gikoresho gishobora gusukurwa neza hakoreshejwe HF/HCl ishyushye nta kwangirika gukabije. Iki kimenyetso gituma ubuzima buramba kandi uduce duto duke, ibyo bikaba ari ingenzi cyane mu kubungabunga imiterere myiza ikenewe mu nganda zikora ibikoresho bya semiconductor.

Gusiga CVD kuri sisitemu nyinshi no kunoza imikorere

Sisitemu zo gusiga irangi ry’ibice byinshi zihuza ibikoresho bitandukanye kugira ngo zigere ku musaruro mwiza urenze uwo urwego rumwe rushobora gutanga. Izi sisitemu zikoresha imiterere yihariye ya buri rwego kugira ngo zikore ingaruka nziza. Urugero, urwego rumwe rushobora gutanga ubukana bwiza, mu gihe urundi rutanga ubukana bwiza bwo kurwanya ingese cyangwa ubushyuhe. Ubu buryo bwemerera injeniyeri guhuza neza irangi ry’ibice bihuye neza n’ibisabwa byihariye. Sisitemu zo gusiga irangi ry’ibice byinshi zishobora gutsinda imbogamizi z’ibikoresho ku giti cyabyo. Urugero, urwego rukomeye ariko rworoshye rushobora guhuzwa n’urwego rukomeye kandi rworoshye kugira ngo rwongere ubukana bwo kwangirika muri rusange. Mu buryo nk’ubwo, urwego rufite ubukana bwinshi bwo gusiga irangi rw’ibice byinshi rushobora kurinda urwego ruri munsi rutanga ubukana bwiza bwo kwangirika ariko rushobora kwangirika mu bushyuhe bwinshi. Uku guhuza ibikoresho mu buryo bw’ingenzi bituma irangi riramba cyane, rimara igihe kirekire, kandi rikagira ubushobozi bwo gukora neza mu nganda zigoye.

Guhitamo neza ibikoresho byo gusiga CVD biterwa gusa n'ibyo umuntu akeneye mu buryo bwihariye. Imyambaro ya TiN, Al2O3, na SiC CVD buri imwe itanga inyungu zidasanzwe ku bibazo bitandukanye by'inganda. Gufata ibyemezo neza hashingiwe ku mikorere yayo itandukanye byongera igihe kirekire cy'ibice no gukora neza. Injeniyeri zigomba gusuzuma neza ibintu byose kugira ngo zihitemo ibikoresho byiza bihuye n'ibyo zikeneye. Ibi bituma zirinda cyane kandi zigakomeza igihe kirekire ku bice by'ingenzi.

Ibibazo Bikunze Kubazwa

Ni iyihe nyungu y'ibanze yo gusiga TiN CVD?

Irangi rya TiN ritanga ubukana bwiza kandi rirwanya kwangirika. Rinatanga ubukana bwiza bw'ibinyabutabire. Inganda nyinshi zikoresha TiN mu gukata ibikoresho no mu mitako. Rinoza imikorere no kugabanya ikiguzi.

Ni iyihe CVD coating itanga ubushobozi bwo kurwanya oxidation mu bushyuhe bwinshi cyane?

Al2O3 na SiC CVD coatings byombi bitanga ubudahangarwa bwiza bwo kurwanya oxidation. Al2O3 irinda ibikoresho biri hejuru ya 1000°C. SiC ikora urwego rw'ikirahure cya SiO2 rukingira, rukora neza ndetse no kuri 1600°C. Irakora neza cyane mu bushyuhe bukabije.

Kuki irangi rya SiC CVD rikundwa mu gutunganya semiconductor?

Irangi rya SiC ritanga ubuziranenge buhanitse cyane, burenga 99.9995%. Ritanga ubudahangarwa budasanzwe bwa shimi kandi rigabanya gukora uduce duto. Iyi miterere ni ingenzi mu gukumira ubwandu mu nganda zikora ibikoresho bya semiconductor.

Ese irangi rya CVD rifite imbogamizi ku bijyanye n'ibikoresho bya substrate?

Yego, imikorere ya CVD ikunze gusaba ubushyuhe bwinshi bwo kubika ibintu. Ibi bigabanya ikoreshwa ryayo ku bikoresho bimwe na bimwe bya substrate. Urugero, ubushyuhe bwinshi bushobora gushonga ibyuma bishongesha ibintu bike nka aluminiyumu.