Nā mea kūʻai aku kūʻai nui maikaʻi Kina Abrasive Polishing a me Sandblasting Silicon Carbide Nano Sic me ka Conductivity Thermal maikaʻi

Wehewehe Pōkole:


  • Kahi i hoʻomaka ai:Kina
  • ʻAno kristal:Pae FCCβ
  • Ka nui o ka paʻa:3.21 g/cm;
  • Paʻakikī:2500 Vickers;
  • Ka nui o ka palaoa:2~10μm;
  • Maʻemaʻe Kemika:99.99995%;
  • Ka Mana Wela:640J·kg-1·K-1;
  • Mahana Hoʻoheheʻe:2700℃;
  • Ikaika Felexural:415 Mpa (RT 4-Point);
  • Modulus o Young:430 Gpa (4pt kūlou, 1300 ℃);
  • Hoʻonui Wela (CTE):4.5 10-6K-1;
  • Ka Hoʻokele Wela:300(W/MK);
  • Nā kikoʻī huahana

    Nā Lepili Huahana

    Me kā mākou hoʻokele maikaʻi, ka hiki ke hana loea ikaika a me ke kaʻina hana lawelawe maikaʻi loa, ke hoʻomau nei mākou e hāʻawi i kā mākou mea kūʻai aku me ke kūlana kiʻekiʻe kaulana, nā kumukūʻai kūʻai kūpono a me nā mea lawelawe maikaʻi loa. Ke manaʻo nei mākou e lilo i waena o kāu mau hoa hilinaʻi loa a loaʻa iā ʻoe ka ʻoluʻolu no nā mea kūʻai aku kūʻai nui maikaʻi Kina Abrasive Polishing a me Sandblasting Silicon Carbide NanoʻO Sicme ka Conductivity Thermal Maikaʻi, ʻO kā mākou pahuhopu hope loa ka noho mau ʻana ma ke ʻano he brand kiʻekiʻe a me ke alakaʻi ʻana ma ke ʻano he paionia i kā mākou kahua. Ke maopopo nei mākou e loaʻa i kā mākou ʻike hana i ka hana ʻana i nā mea hana ka hilinaʻi o ka mea kūʻai aku, Makemake mākou e hana pū a hana pū i kahi wā lōʻihi ʻoi aku ka maikaʻi me ʻoe!
    Me kā mākou hoʻokele maikaʻi, ka hiki ke hana loea ikaika a me ke kaʻina hana lawelawe maikaʻi loa, ke hoʻomau nei mākou i ka hāʻawi ʻana i kā mākou mea kūʻai aku me ke kūlana kiʻekiʻe, nā kumukūʻai kūʻai kūpono a me nā mea lawelawe maikaʻi loa. Ke manaʻo nei mākou e lilo i waena o kāu mau hoa hilinaʻi loa a loaʻa iā ʻoe ka ʻoluʻolu noKina Silicon Carbide, ʻO Sic, ʻO kā mākou pahuhopu "e hoʻolako i nā huahana a me nā hoʻonā mua a me ka lawelawe maikaʻi loa no kā mākou mea kūʻai aku, no laila ke maopopo nei mākou e loaʻa iā ʻoe kahi pōmaikaʻi margin ma o ka hana pū ʻana me mākou". Inā makemake ʻoe i kekahi o kā mākou waiwai kūʻai a makemake paha e kūkākūkā i kahi kauoha maʻamau, e ʻoluʻolu e hoʻokaʻaʻike mai iā mākou. Ke kakali nei mākou i ka hoʻokumu ʻana i nā pilina ʻoihana holomua me nā mea kūʻai aku hou a puni ka honua i ka wā e hiki mai ana.
    Wehewehe Huahana

    Hāʻawi kā mākou hui i nā lawelawe hana uhi SiC ma o ke ʻano CVD ma luna o ka graphite, keramika a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā e loaʻa ana ke kalapona a me ka silicon ke hana i ka mahana kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe, nā molekala i waiho ʻia ma luna o ka ʻili o nā mea i uhi ʻia, e hana ana i ka papa pale SIC.

    Nā hiʻohiʻona nui:

    1. Ke kūpaʻa ʻana i ka oxidation wela kiʻekiʻe:

    He maikaʻi loa nō ke kūpaʻa ʻana i ka oxidation ke kiʻekiʻe ka mahana i 1600 C.

    2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka waiho ʻana o ka mahu kemika ma lalo o ke kūlana chlorination wela kiʻekiʻe.

    3. Ke kūpaʻa ʻana i ka ʻino: paʻakikī kiʻekiʻe, ʻili paʻa, nā ʻāpana maikaʻi.

    4. Ke kūpaʻa ʻana i ka palaho: waikawa, alkali, paʻakai a me nā reagents organik.

    Nā Kikoʻī Nui o ka Uhi ʻana o CVD-SIC

    Nā Waiwai SiC-CVD

    ʻAno Crystal Pae FCC β
    Ka nui o ka paʻa g/cm³ 3.21
    Paʻakikī Paʻakikī Vickers 2500
    Ka nui o ka palaoa μm 2~10
    Maʻemaʻe Kemika % 99.99995
    Ka Mana Wela J·kg-1 ·K-1 640
    Mahana Sublimation 2700
    Ikaika Felexural MPa (RT 4-kiko) 415
    Modulus o Young Gpa (4pt kūlou, 1300 ℃) 430
    Hoʻonui Wela (CTE) 10-6K-1 4.5
    Ka hoʻokele wela (W/mK) 300

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