Abathengisi Abahle Abathengisa Ngobuningi BaseShayina Abasebenzisa I-Abrasive Polishing kanye ne-Sandblasting Silicon Carbide Nano Sic Ene-Thermal Conductivity Enhle

Incazelo emfushane:


  • Indawo Yokuqala:IShayina
  • Isakhiwo sekristalu:Isigaba se-FCCβ
  • Ubuningi:3.21 g/cm;
  • Ubulukhuni:AmaVickers angu-2500;
  • Usayizi Wezinhlamvu:2 ~ 10μm;
  • Ukuhlanzeka Kwamakhemikhali:99.99995%;
  • Amandla Okushisa:640J·kg-1·K-1;
  • Izinga Lokushisa Lokuncibilikisa:2700℃;
  • Amandla e-Felexural:415 Mpa (RT 4-Point);
  • I-Modulus kaYoung:430 Gpa (ukugoba okungu-4pt, 1300℃);
  • Ukwanda Kokushisa (i-CTE):4.5 10-6K-1;
  • Ukuqhuba Ukushisa:300(W/MK);
  • Imininingwane Yomkhiqizo

    Amathegi Omkhiqizo

    Ngokuphathwa kwethu okuhle, ikhono lethu lobuchwepheshe elinamandla kanye nenqubo eqinile yokuphatha enhle kakhulu, siyaqhubeka nokunikeza amakhasimende ethu ikhwalithi ephezulu ehloniphekile, amanani okuthengisa anengqondo kanye nabahlinzeki abahle. Sihlose ukuba phakathi kwabalingani bakho abathembekile kakhulu futhi sithole ukwaneliseka kwakho nge-Good Wholesale Vendors China Abrasive Polishing kanye ne-Sandblasting Silicon Carbide Nano.I-SicNgokusebenzisa i-Good Thermal Conductivity, umgomo wethu oyinhloko uhlale usezingeni eliphezulu njengomkhiqizo ohamba phambili kanye nokuhola njengephayona emkhakheni wethu. Siyaqiniseka ukuthi ulwazi lwethu olukhiqizayo ekudaleni amathuluzi luzokwenza amakhasimende akwethembe, Sifisa ukubambisana futhi sidale isikhathi eside esingcono nawe!
    Ngokuphathwa kwethu okuhle, ikhono lethu lobuchwepheshe elinamandla kanye nenqubo eqinile yokuphatha esezingeni eliphezulu, siyaqhubeka nokunikeza amakhasimende ethu ikhwalithi ephezulu ehloniphekile, amanani okuthengisa anengqondo kanye nabahlinzeki abahle kakhulu. Sihlose ukuba phakathi kwabalingani bakho abathembekile kakhulu futhi sithole ukwaneliseka kwakho ngeI-China Silicon Carbide, I-Sic, Umgomo wethu “ukuhlinzeka ngemikhiqizo nezixazululo zesinyathelo sokuqala kanye nensizakalo engcono kakhulu kumakhasimende ethu, ngakho-ke siyaqiniseka ukuthi kuzodingeka uthole inzuzo enkulu ngokubambisana nathi”. Uma unentshisekelo kunoma iyiphi yezimpahla zethu noma ungathanda ukuxoxa nge-oda elenziwe ngokwezifiso, sicela ukhululeke ukuxhumana nathi. Silangazelela ukwakha ubudlelwano bebhizinisi obuphumelelayo namakhasimende amasha emhlabeni jikelele maduze nje.
    Incazelo Yomkhiqizo

    Inkampani yethu inikeza izinsizakalo zenqubo yokumboza i-SiC ngendlela ye-CVD ebusweni be-graphite, izinto zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabela ekushiseni okuphezulu ukuze athole ama-molecule e-SiC ahlanzekile kakhulu, ama-molecule abekwe ebusweni bezinto ezimboziwe, akha ungqimba oluvikelayo lwe-SIC.

    Izici eziyinhloko:

    1. Ukumelana nokushisa okuphezulu kwe-oxidation:

    ukumelana nokushiswa kwe-oxidation kusese kuhle kakhulu lapho izinga lokushisa liphezulu lifinyelela ku-1600 C.

    2. Ubumsulwa obuphezulu: okwenziwe ngokufaka umusi wamakhemikhali ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

    3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, ubuso obuncane, izinhlayiya ezincane.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-reagent e-organic.

    Imininingwane Eyinhloko Yokumboza kwe-CVD-SIC

    Izakhiwo ze-SiC-CVD

    Isakhiwo sekristalu Isigaba se-β se-FCC
    Ubuningi g/cm³ 3.21
    Ubulukhuni Ubulukhuni bukaVickers 2500
    Usayizi Wezinhlamvu μm 2~10
    Ukuhlanzeka Kwamakhemikhali % 99.99995
    Amandla Okushisa J·kg-1 ·K-1 640
    Izinga Lokushisa Lokuthuthwa Kwezinto Ezincane 2700
    Amandla e-Felexural I-MPa (RT-amaphuzu angu-4) 415
    I-Young's Modulus I-Gpa (ukugoba okungu-4pt, 1300℃) 430
    Ukwanda Kokushisa (i-CTE) 10-6K-1 4.5
    Ukuqhuba kwe-thermal (W/mK) 300

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