Abathengisi Abalungileyo Abathengisa Izinto Ezithengiswayo eTshayina Ezirhabaxa Nezinyibilikisi zeSandblasting Silicon Carbide Nano Sic Ezinomoya Ofanelekileyo Wokushisa

Inkcazo emfutshane:


  • Indawo Yokuqala:iTshayina
  • Ulwakhiwo lwekristale:Isigaba se-FCCβ
  • Uxinano:3.21 g/cm;
  • Ubunzima:IiVickers ezingama-2500;
  • Ubungakanani bengqolowa:2 ~ 10μm;
  • Ucoceko lweeKhemikhali:99.99995%;
  • Umthamo wobushushu:640J·kg-1·K-1;
  • Ubushushu bokunyibilikisa:2700℃;
  • Amandla e-Felexural:415 Mpa (RT 4-Point);
  • IModulus kaYoung:430 Gpa (ukugoba kwe-4pt, 1300℃);
  • Ukwandiswa kobushushu (i-CTE):4.5 10-6K-1;
  • Ukuqhuba kwe-Thermal:300(W/MK);
  • Iinkcukacha zeMveliso

    Iithegi zeMveliso

    Ngenxa yolawulo lwethu oluhle, ubuchule bethu obunamandla kunye nenkqubo engqongqo yokuphatha ebalaseleyo, siyaqhubeka nokubonelela abathengi bethu ngomgangatho ophezulu ohloniphekileyo, amaxabiso afanelekileyo okuthengisa kunye nababoneleli ababalaseleyo. Sijonge ukuba phakathi kwamaqabane akho athembekileyo kwaye sifumane ulwaneliseko lwakho kwi-Good Wholesale Vendors China Abrasive Polishing kunye ne-Sandblasting Silicon Carbide Nano.I-SicngeGood Thermal Conductivity, Injongo yethu ephambili kukuhlala sibekwe njengophawu oluphezulu kwaye sikhokela njengovulindlela kwicandelo lethu. Siqinisekile ukuba amava ethu avelisayo ekudaleni izixhobo aya kubenza abathengi bathembeke, Sinqwenela ukusebenzisana kwaye senza ixesha elide elingcono nawe!
    Ngenxa yolawulo lwethu oluhle, ubuchule bethu obunamandla kunye nenkqubo engqongqo yokuphatha ebalaseleyo, siyaqhubeka nokubonelela abathengi bethu ngomgangatho ophezulu ohloniphekileyo, amaxabiso afanelekileyo okuthengisa kunye nababoneleli ababalaseleyo. Sijonge ukuba phakathi kwamaqabane akho athembekileyo kwaye sizuze ulwaneliseko lwakho ngeI-China Silicon Carbide, I-Sic, Injongo yethu “kukubonelela ngeemveliso zenyathelo lokuqala kunye nezisombululo kunye nenkonzo engcono kubathengi bethu, ngaloo ndlela siqinisekile ukuba kuya kufuneka ufumane inzuzo enkulu ngokusebenzisana nathi”. Ukuba unomdla kuyo nayiphi na impahla yethu okanye ungathanda ukuxoxa nge-odolo eyenziwe ngokwezifiso, nceda uzive ukhululekile ukunxibelelana nathi. Silangazelela ukwakha ubudlelwane beshishini obuphumelelayo nabathengi abatsha kwihlabathi liphela kungekudala.
    Ingcaciso yeMveliso

    Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma iSiC ngendlela yeCVD kumphezulu wegrafiti, iiseramikhi kunye nezinye izinto, ukuze iigesi ezikhethekileyo eziqulethe ikhabhoni kunye nesilicon zisabele kubushushu obuphezulu ukuze zithole iimolekyuli zeSiC ezicocekileyo kakhulu, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, zenze umaleko wokukhusela we-SIC.

    Iimpawu eziphambili:

    1. Ukumelana ne-oxidation yobushushu obuphezulu:

    Ukumelana ne-oxidation kusengcono kakhulu xa amaqondo obushushu ephezulu ukuya kwi-1600 C.

    2. Ubunyulu obuphezulu: benziwa yi-chemical vapor deposition phantsi kwemeko ye-chlorination yobushushu obuphezulu.

    3. Ukumelana nokukhukuliseka: ubulukhuni obuphezulu, umphezulu oxineneyo, amasuntswana amancinci.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, ityuwa kunye nee-reagents ze-organic.

    Iinkcukacha eziphambili zeCVD-SIC Coating

    Iipropati zeSiC-CVD

    Ulwakhiwo lwekristale Isigaba se-β se-FCC
    Uxinano g/cm³ 3.21
    Ukuqina Ubulukhuni bukaVickers 2500
    Ubungakanani bengqolowa μm 2~10
    Ucoceko lweeKhemikhali % 99.99995
    Umthamo wobushushu J·kg-1 ·K-1 640
    Ubushushu bokunyibilikisa 2700
    Amandla eFeleksiyuramu I-MPa (RT-point 4) 415
    IModulus yoLutsha I-Gpa (i-4pt bend, 1300℃) 430
    Ukwandiswa kobushushu (i-CTE) 10-6K-1 4.5
    Ukuqhuba kobushushu (W/mK) 300

    1 2 3 4 5


  • Ngaphambili:
  • Okulandelayo:

  • Incoko ye-WhatsApp kwi-Intanethi!