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Currently, silicon carbide (SiC) is a thermally conductive ceramic material that is actively studied at home and abroad. The theoretical thermal conductivity of SiC is very high, and some crystal f...
Triangular defect
Triangular defects are the most fatal morphological defects in SiC epitaxial layers. A large number of literature reports have shown that the formation of triangular defects is...
HOW TO MAKE A SILICON WAFER
A wafer is a slice of silicon roughly 1 millimeter thick that has an extremely flat surface thanks to procedures that are technically very demanding. The subsequent use ...
Because of its good physical properties, reaction-sintered silicon carbide has been widely used as a major chemical raw material. Its scope of application has three aspects: for the production of a...
Recrystallized silicon carbide is an innovative material with superior properties. It has superior mechanical properties and high corrosion resistance, and has a wide range of applications in aeros...
2. Epitaxial thin film growth
The substrate provides a physical support layer or conductive layer for Ga2O3 power devices. The next important layer is the channel layer or epitaxial layer used f...