CVD SiC Coated Components for Silicon Epitaxy (Si Epi)
Precision-engineered for single-wafer and batch Silicon Epitaxial deposition systems, our CVD SiC coated susceptors, satellite disks, and thermal field components deliver outstanding thermal uniformity and zero outgassing. The high-density cubic β-SiC coating layer fully encapsulates the high-purity graphite substrate, preventing reactive gas etching (SiH₄, SiH₂Cl₂, HCl) and guaranteeing ultra-low metallic impurity levels (< 5 ppm) during high-temperature Si Epi processing (1000°C - 1200°C).
Controlled emissivity ensures precise wafer edge-to-center film thickness consistency.
Provides robust protection against in-situ chamber cleaning chemicals and thermal shocks.
Precision CNC machined to fit mainstream 200mm/300mm single-wafer Epi tools (Applied Materials, ASM).
| Technical Parameter | Specification Value | Standard / Test Method |
|---|---|---|
| Coating Material | CVD β-SiC (Cubic Phase) | High-Density Crystalline Structure |
| Substrate Material | Ultra-Pure Isostatic Graphite | Density: 1.82 - 1.88 g/cm³ |
| Chemical Purity | Total Impurities < 5 ppm | GDMS Tested |
| Coating Thickness | 80 μm - 150 μm | Uniformity ≤ ±5% |
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SiC Coated Barrel Susceptor
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