Advanced CVD Coatings for SiC Epitaxial Growth
Tailored for high-power semiconductor device processes operating under extreme thermal stress (1500°C - 1700°C), our CVD SiC and TaC coated planetary susceptors, satellite disks, and gas deflectors are built to excel. Designed to prevent particle generation, surface degradation, and reactive gas etching (H₂, SiH₄, C₃H∯), our advanced coatings ensure long operational lifetimes, superior dopant control, and high film thickness uniformity across 6-inch and 8-inch SiC epitaxial wafers.
Thermally stable up to 1700°C in severe H₂/silane reducing environments.
Eliminates coating delamination, micro-cracking, and spalling during rapid thermal cycles.
Precision CNC machining tailored for next-gen high-throughput SiC Epi reactors (LPE, Aixtron, Nuflare).
| Technical Parameter | Specification Value | Standard / Test Method |
|---|---|---|
| Coating Material Options | CVD SiC / Tantalum Carbide (TaC) | High-Purity Hermetic Layer |
| Base Substrate | Purified Isostatic Graphite | Bulk Impurity < 5 ppm |
| Thermal Shock Resistance | Delta T > 500°C Ramp Rate | No Cracking / Peeling |
| Surface Roughness (Ra) | ≤ 0.4 μm (Mirror Polished) | Prevents Wafer Sticking & Particles |
