Ihe mkpuchi graphite SiC nke e ji ihe mkpuchi kpuchie, mkpuchi sic, mkpuchi SiC nke e ji ihe mkpuchi graphite kpuchie maka semiconductor

A na-ekpuchi silicon carbidediski graphite bụ iji kwadebe oyi akwa nchebe silicon carbide n'elu graphite site na itinye anwụrụ ọkụ anụ ahụ ma ọ bụ kemịkalụ na ịgbasa. Enwere ike ijikọ oyi akwa nchebe silicon carbide nke a kwadebere na matrix graphite nke ọma, na-eme ka elu nke isi graphite dị nkọ ma ghara inwe oghere, na-enye matrix graphite ihe pụrụ iche, gụnyere iguzogide oxidation, iguzogide acid na alkali, iguzogide mbuze, iguzogide nchara, wdg. Ugbu a, mkpuchi Gan bụ otu n'ime ihe kachasị mma maka uto epitaxial nke silicon carbide.

Semikọndọktọ silicon carbide bụ isi ihe dị na semikọndọktọ oghere band ọhụrụ emepụtara. Ngwaọrụ ya nwere njirimara nke iguzogide okpomọkụ dị elu, iguzogide voltaji dị elu, ugboro ole dị elu, ike dị elu na iguzogide radieshon. O nwere uru nke ọsọ mgbanwe ngwa ngwa na arụmọrụ dị elu. Ọ nwere ike ibelata oriri ike ngwaahịa nke ukwuu, melite arụmọrụ ntụgharị ike ma belata olu ngwaahịa. A na-ejikarị ya eme ihe na nkwukọrịta 5g, nchekwa mba na ụlọ ọrụ agha. Ubi RF nke a na-anọchite anya ya bụ ikuku na ubi eletrọniki ike nke ụgbọ ala ike ọhụrụ na "akụrụngwa ọhụrụ" na-anọchite anya nwere atụmanya ahịa doro anya na nke dị ukwuu ma n'ọhịa obodo na nke agha.

Ihe e ji emepụta silicon carbide bụ isi ihe e ji emepụta semiconductor gap band ọhụrụ. A na-ejikarị silicon carbide eme ihe na ngwa eletrọniki microwave, ngwa eletrọniki ike na mpaghara ndị ọzọ.Ọ dị n'ihu nke usoro ụlọ ọrụ semiconductor gap band, ọ bụkwa ihe dị mkpa na isi ihe dị mkpa. Enwere ike kewaa silicon carbide substrate n'ụdị abụọ: semi insulating na conductive. N'ime ha, semi insulating silicon carbide substrate nwere nnukwu resisivity (resistive ≥ 105 Ω· cm). Enwere ike iji semi insulating substrate jikọtara ya na heterogeneous gallium nitride epitaxial sheet dị ka ihe eji arụ ọrụ RF, nke a na-ejikarị eme ihe na nkwukọrịta 5g, nchekwa mba na ụlọ ọrụ agha n'ihe ndị dị n'elu; nke ọzọ bụ silicon carbide substrate conductive nwere obere resistive (oke resistive bụ 15 ~ 30m Ω· cm). Enwere ike iji otu epitaxy nke silicon carbide substrate conductive na silicon carbide dị ka ihe maka ngwaọrụ ike. Isi ihe eji eme ihe bụ ụgbọ ala eletrik, sistemụ ike na ubi ndị ọzọ.