Matambudziko ehunyanzvi mukugadzira mawafer emhando yepamusoro esilicon carbide ane simba rakagadzikana anosanganisira:
1) Sezvo makristaro achifanira kukura munzvimbo ine tembiricha yepamusoro inodarika 2000°C, zvinodiwa zvekudzora tembiricha zvakanyanya;
2) Sezvo silicon carbide iine magadzirirwo ekristaro anopfuura mazana maviri, asi magadzirirwo mashoma esilicon carbide imwe chete ndiyo inodiwa semiconductor, chiyero chesilicon-to-carbon, gradient yekupisa kwekukura, uye kukura kwekristaro zvinofanirwa kudzorwa nemazvo panguva yekukura kwekristaro. Maparamita akadai sekumhanya nekumanikidzwa kwemhepo;
3) Pasi penzira yekutumira vapor phase, tekinoroji yekuwedzera dhayamita yekukura kwesilicon carbide crystal yakaoma zvikuru;
4) Kuomarara kwesilicon carbide kwakafanana nekwedhaimani, uye matekiniki ekucheka, kukuya, uye kupukuta akaoma.
Mawafer epitaxial eSiC: anowanzogadzirwa nenzira yemakemikari evapor deposition (CVD). Zvichienderana nemhando dzakasiyana dzedoping, akakamurwa kuita mawafer epitaxial epitaxial emhando yen-type nep-type. Domestic Hantian Tiancheng neDongguan Tianyu vanogona kutopa mawafer eSiC epitaxial epitaxial e4-inch/6-inch. Kune SiC epitaxy, zvakaoma kudzora mumunda une voltage yakawanda, uye mhando yeSiC epitaxy ine simba guru pamidziyo yeSiC. Uyezve, michina ye epitaxial inotongwa nemakambani mana anotungamira muindasitiri iyi: Axitron, LPE, TEL neNuflare.
Silicon carbide epitaxialWafer inoreva wafer yesilicon carbide umo firimu rimwe chete rekristaro (epitaxial layer) rine zvinodiwa uye zvakafanana nekristaro yesubstrate rinokura pasubstrate yepakutanga yesilicon carbide. Kukura kweEpitaxial kunonyanya kushandisa michina yeCVD (Chemical Vapor Deposition, ) kana michina yeMBE (Molecular Beam Epitaxy). Sezvo michina yesilicon carbide inogadzirwa zvakananga mu epitaxial layer, mhando ye epitaxial layer inokanganisa zvakananga mashandiro uye goho remuchina. Sezvo voltage ichiramba ichishanda zvakanaka nemuchina, ukobvu hwe epitaxial layer inoenderana hunova hwakakora uye kutonga kunowedzera kuoma. Kazhinji, kana voltage iri padyo ne600V, ukobvu hwe epitaxial layer hunodiwa hunenge 6 microns; kana voltage iri pakati pe1200-1700V, ukobvu hwe epitaxial layer hunodiwa hunosvika 10-15 microns. Kana voltage ikasvika kupfuura 10,000 volts, ukobvu hwe epitaxial layer hunopfuura 100 microns hunogona kudiwa. Sezvo ukobvu hwe epitaxial layer huchiramba huchiwedzera, zvinova zvakaoma kudzora kufanana kweukobvu ne resistivity uye defect density.
Midziyo yeSiC: Pasi rese, 600~1700V SiC SBD neMOSFET zvave maindasitiri. Zvigadzirwa zvikuru zvinoshanda pamazinga emagetsi ari pasi pe1200V uye zvinonyanya kushandisa kurongedza kweTO. Panyaya yemitengo, zvigadzirwa zveSiC pamusika wepasi rose zvinodhura kanenge ka5-6 kupfuura zveSi. Zvisinei, mitengo iri kudzikira ne10% pagore nekuwedzera kwezvinhu zvepamusoro uye kugadzirwa kwemidziyo mumakore maviri-matatu anotevera, kuwanikwa kwemusika kuchawedzera, zvichikonzera kudzikira kwemitengo. Zvinotarisirwa kuti kana mutengo wasvika ka2-3 kupfuura wezvigadzirwa zveSi, mabhenefiti anouya nekudzikiswa kwemitengo yesystem uye kushanda kuri nani zvichasundidzira SiC kutora nzvimbo yemusika yemidziyo yeSi.
Kurongedza kwechinyakare kunobva pamidziyo yakagadzirwa nesilicon, nepo zvinhu zve semiconductor zvechizvarwa chechitatu zvichida dhizaini itsva zvachose. Kushandisa zvimiro zvekurongedza zvechinyakare zvesilicon zvemidziyo yemagetsi ine bandgap yakakura kunogona kuunza matambudziko matsva nematambudziko ane chekuita nefrequency, thermal management, uye kuvimbika. Zvishandiso zveSiC zvinonzwa zvakanyanya paparasitic capacitance uye inductance. Zvichienzaniswa nezvishandiso zveSi, machipisi eSiC ane kumhanya kwekuchinja nekukurumidza, izvo zvinogona kutungamira mukupfura zvakanyanya, kuzunguzika, kurasikirwa kwakanyanya kwekuchinja, uye kunyange kutadza kushanda zvakanaka kwezvishandiso. Pamusoro pezvo, zvishandiso zveSiC zvinoshanda pakupisa kwakanyanya, zvichida matekiniki epamusoro ekugadzirisa kupisa.
Magadzirirwo akasiyana-siyana akagadzirwa mumunda wekurongedza simba re semiconductor rakafara. Kurongedza simba reSi-based power module hakuchakodzeri. Kuti kugadzirisa matambudziko eparasitic parameters akakwira uye kusashanda zvakanaka kwekupisa kweSi-based power module packaging, SiC power module packaging inoshandisa wireless interconnection uye double-side cooling technology muchimiro chayo, uye inoshandisawo substrate materials ane thermal conductivity iri nani, uye yakaedza kubatanidza connector capacitors, temperature/current sensors, uye drive circuits muchimiro che module, uye yakagadzira matekinoroji akasiyana-siyana ekurongedza ma module. Uyezve, kune zvipingamupinyi zvikuru zvehunyanzvi pakugadzira michina yeSiC uye mitengo yekugadzira yakakwira.
Zvishandiso zvesilicon carbide zvinogadzirwa nekuisa epitaxial layers pa silicon carbide substrate kuburikidza neCVD. Maitiro aya anosanganisira kuchenesa, oxidation, photolithography, etching, stripping of photoresist, ion implantation, chemical vapor deposition ye silicon nitride, polishing, sputtering, uye processing steps dzinotevera kuti pave nedevice structure paSiC single crystal substrate. Mhando huru dzezvishandiso zveSiC power zvinosanganisira SiC diodes, SiC transistors, uye SiC power modules. Nekuda kwezvinhu zvakaita sekunonoka kwekugadzirwa kwezvinhu uye mwero wegoho wakaderera, zvishandiso zvesilicon carbide zvine mitengo yakakwira yekugadzira.
Pamusoro pezvo, kugadzirwa kwemidziyo yesilicon carbide kune mamwe matambudziko ehunyanzvi:
1) Zvinodiwa kugadzira maitiro chaiwo anoenderana nehunhu hwezvinhu zvesilicon carbide. Semuenzaniso: SiC ine poindi yekunyunguduka yakanyanya, izvo zvinoita kuti kupararira kwekupisa kwechinyakare kusashande. Zvinodiwa kushandisa nzira yekuisa maion uye kudzora nemazvo maparamita akadai sekupisa, mwero wekupisa, nguva, uye kuyerera kwegasi; SiC haina kusimba kune zvinonyungudutsa zvemakemikari. Nzira dzakadai sekucheka kwakaoma dzinofanira kushandiswa, uye zvinhu zvemasiki, musanganiswa wegasi, kudzora mativi ekutsvedza, mwero wekucheka, kuomarara kwemativi ekutsvedza, nezvimwewo zvinofanirwa kugadziriswa uye kugadzirwa;
2) Kugadzirwa kwemaelectrode esimbi pa silicon carbide wafers kunoda kuti electrode isashande zvakanaka pasi pe 10-5Ω2. Zvinhu zve electrode zvinosangana nezvinodiwa, Ni neAl, hazvina kugadzikana zvakanaka pakupisa pamusoro pe 100°C, asi Al/Ni ine kugadzikana kuri nani pakupisa. Kugona kwe /W/Au composite electrode material kwakakwira ne 10-3Ω2;
3) SiC ine kuchekwa kwakanyanya, uye kuomarara kweSiC kuri pechipiri kune dhaimani, izvo zvinoisa pamberi zvinodiwa zvakanyanya pakucheka, kukuya, kupolisha nedzimwe tekinoroji.
Uyezve, michina yemagetsi ye trench silicon carbide yakaoma kugadzira. Zvichienderana nemaumbirwo akasiyana emidziyo, michina yemagetsi ye silicon carbide inogona kupatsanurwa kuita michina ye planar uye michina ye trench. Midziyo yemagetsi ye planar silicon carbide ine unit consistency yakanaka uye nzira iri nyore yekugadzira, asi inowanzoita JFET effect uye ine high parasitic capacitance uye on-state resistance. Zvichienzaniswa nemidziyo ye planar, michina yemagetsi ye trench silicon carbide ine unit consistency yakaderera uye ine maitiro akaomarara ekugadzira. Zvisinei, chimiro che trench chinobatsira kuwedzera density yeyuniti yemidziyo uye hachina mukana wekugadzira JFET effect, iyo inobatsira kugadzirisa dambudziko rekufamba kwechiteshi. Ine hunhu hwakanaka senge small on-resistance, small parasitic capacitance, uye low switching energy use. Ine mabhenefiti akakosha emutengo uye mashandiro uye yave nzira huru yekugadzirwa kwemidziyo yemagetsi ye silicon carbide. Sekureva kwewebsite yepamutemo yeRohm, chimiro cheROHM Gen3 (Gen1 Trench structure) chinongori 75% chete yenzvimbo yechipu yeGen2 (Plannar2), uye kusakwanisa kwechimiro cheROHM Gen3 kunoderedzwa ne50% pasi pehukuru hwechipu imwe chete.
Mari yeSilicon carbide substrate, epitaxy, front-end, R&D nezvimwe zvinosvika 47%, 23%, 19%, 6% uye 5% yemari yekugadzira michina yesilicon carbide zvichiteerana.
Chekupedzisira, tichatarisa pakuputsa zvipingamupinyi zvehunyanzvi zve substrates mucheni yeindasitiri ye silicon carbide.
Maitiro ekugadzira silicon carbide substrates akafanana neaya e silicon-based substrates, asi akaoma zvikuru.
Maitiro ekugadzira silicon carbide substrate anowanzo sanganisira kugadzira zvinhu zvisina kugadzirwa, kukura kwekristaro, kugadzirisa ingot, kucheka ingot, kukuya wafer, kupukuta, kuchenesa nezvimwe zvinongedzo.
Danho rekukura kwekristaro ndiro musimboti webasa rese, uye danho iri rinoona hunhu hwemagetsi hwesilicon carbide substrate.
Zvinhu zvesilicon carbide zvakaoma kukura muchikamu chemvura mumamiriro ezvinhu akajairwa. Nzira yekukura kwechikamu chemhepo inofarirwa pamusika nhasi ine tembiricha yekukura iri pamusoro pe2300°C uye inoda kudzora tembiricha yekukura. Maitiro ese ekushanda akaoma kuona. Kukanganisa kudiki kunotungamira mukubviswa kwechigadzirwa. Kana tichienzanisa, zvinhu zvesilicon zvinongoda 1600℃ chete, izvo zvakaderera zvikuru. Kugadzirira silicon carbide substrates kunosanganawo nematambudziko akadai sekukura kwekristaro kunononoka uye zvinodiwa zvekristaro zvakanyanya. Kukura kwesilicon carbide wafer kunotora mazuva angangoita manomwe kusvika gumi, nepo kudhonza silicon rod kunotora mazuva maviri nehafu chete. Uyezve, silicon carbide chinhu chine kuoma kwacho kuri kwechipiri kune dhaimani. Chicharasikirwa zvakanyanya panguva yekucheka, kukuya, uye kupukuta, uye chiyero chekubuda chiri 60% chete.
Tinoziva kuti mafambiro ari kuitwa ndeekuwedzera saizi ye silicon carbide substrates, sezvo saizi yacho ichiramba ichiwedzera, zvinodiwa kuti tekinoroji yekuwedzera dhayamita iwedzere. Zvinoda musanganiswa wezvinhu zvakasiyana-siyana zvekudzora tekinoroji kuti makristaro akure zvakare.
Nguva yekutumira: Chivabvu-22-2024