Maadaama wax soo saarka semiconductor-ka uu u gudbayo juqraafi yar oo qalab ah, wax soo saar wafer sare leh, iyo heerarka xakamaynta wasakhowga oo sii kordhaya, qalabka farsamaynta kulaylka ayaa wajahaya caqabado injineernimo oo aan hore loo arag. Hawsha sida LPCVD, oksaydhka kulaylka, faafinta dopant-ka, iyo annealing heerkulka sare hadda waxay u baahan yihiin oo keliya isku mid ahaanshaha heerkulka oo adag, laakiin sidoo kale waqtiga shaqada ee qalabka oo dheer, soo saarista walxaha hoose, iyo soo celinta habka oo la wanaajiyay.
In kasta oo inta badan la iska indho tiro marka la barbar dhigo gaasaska habka, tuubooyinka foornada, ama kiimikada dhigista, boodhadhka cantilever-ku wuxuu si aasaasi ah u go'aamiyaa sida waferku u dhaqmo gudaha jawi heerkul sare leh. Maaddooyin badan oo horumarsan, mar dambe looma tixgeliyo qayb fudud oo la isticmaali karo, laakiin waa agab muhiim ah oo awood u siinaya habaynta semiconductor-ka deggan oo la soo celin karo.
Waa maxay SiC Cantilever Paddle?
SiC Cantilever Paddle waa qayb qaab-dhismeed silicon carbide ah oo saafi ah oo inta badan loo isticmaalo foornooyinka faafinta semiconductor-ka iyo nidaamyada LPCVD. Caadi ahaan waxaa loogu talagalay qaab-dhismeed alwaax cantilever dheer oo awood u leh inuu taageero doomaha quartz ama SiC wafer inta lagu jiro habaynta heerkulka sare.
Qaybta waxaa guud ahaan lagu sameeyaa iyadoo la isticmaalayo:
● carbide silicon ah oo dib loo warshadeeyay (RSiC)
● uumiga kiimikada ee lagu shubay silikoon carbide (CVD SiC)
● walxaha SiC ee ku xiran falcelinta cufnaanta sare leh
Sida laga soo xigtay xogta agabka ee ay daabaceen CoorsTek iyo Saint-Gobain Performance Ceramics, agabka SiC ee saafiga sare leh ayaa badanaa muujiya:
● Qaboojinta kulaylka: qiyaastii 120–200 W/m·K heerkulka qolka
● Heerkulka ugu badan ee hawlgalka jawiga aan firfircoonayn: ka sarreeya 1600°C.
● Isku-darka ballaarinta kulaylka (CTE): qiyaastii 4.0–4.5×10⁻⁶/K.
● Iska caabin aad u fiican oo ku wajahan kiimikada HCl, NH₃, O₂, iyo kiimikada habka koloriinaysan.
Doorka SiC Cantilever Paddle ee habka LPCVD
Dhammaan codsiyada, nidaamyada LPCVD waxay matalaan mid ka mid ah kiisaska ugu muhiimsan ee isticmaalka SiC Cantilever Paddles.
Geedi socodka sida:
● dhigista polysilicon.
● Silicon nitride (Si₃N₄).
● kaydinta oksaydhka cadaadiska hooseeya.
Caadi ahaan waxay ku shaqeeyaan inta u dhaxaysa 500°C iyo 900°C, badanaa waxay ku shaqeeyaan wareegyo geedi socod dheer iyo jawi kiimiko oo aad u falceliyay.
Gudaha nidaamyadan, ul-xidhka cantilever-ku wuxuu qabtaa hawlo muhiim ah oo dhowr ah isku mar.
Marka hore, waxay bixisaa gaadiid farsamo oo deggan oo loogu talagalay doomaha wafer-ka ee galaya iyo ka baxaya tuubada foornada. Sababtoo ah foornooyinka casriga ah ee toosan waxay qaadi karaan boqolaal wafer ah dufcaddiiba, xitaa isbeddel yar oo ku yimaada baaldiga ayaa horseedi kara is-waafajin la'aan wafer, kala-goyn aan degganayn, ama ururin cadaadis farsamo.
Marka labaad, baaldigu wuxuu door muhiim ah ka ciyaaraa isku-midnimada kulaylka. Gudbinta kulaylka sare ee SiC waxay u oggolaanaysaa kuleylku inuu si siman ugu qaybsamo qaab-dhismeedka taageerada, taasoo yaraynaysa kala-duwanaanshaha kulaylka ee maxalliga ah ee saameyn kara isku-midnimada dhigista.
Saddexaad, soo saarista walxaha yaryar waa muhiim. Walxaha semiconductor-ka waa dilaayaasha wax soo saarka tooska ah, gaar ahaan wax soo saarka macquulka ah iyo semiconductor-ka awoodda leh. Sababtoo ah qaab-dhismeedkeeda dhoobada cufan iyo iska caabbinta daxalka xooggan, SiC-ga saafiga ah wuxuu si weyn u yareeyaa khatarta daadinta walxaha marka loo eego walxaha dhaqameed.
Khadadka wax soo saarka LPCVD ee horumarsan, xasilloonida cabbirka muddada-dheer ee baaldiga ayaa si toos ah u saameysa:
● isku dheelitirnaanta dhumucda filimka.
● ku celcelinta wafer-ilaa-wafer.
● waqtiga shaqada foornada.
Ningbo VET Energy waxay ku takhasustay garaafit casri ah, dhoobada silikoon carbide, iyo qaybaha semiconductor-ka ee CVD-dahaarka leh ee loogu talagalay jawiyada wax soo saarka semiconductor-ka ee adag.
Badeecadaha semiconductor-ka ee Core waxaa ka mid ah:
● Baaskiilada SiC Cantilever
● Susceptor Graphite Dahaarka SiC
● Qaadaha Wafer-ka ee SiC-ga lagu dahaadhay
● Qaybaha Nuska Dayaxa ee SiC ee Dahaaran
● Qalabka Isku-dhafka ah ee Kaarboon-Kaarboon
● Dareemka Garaafiga Jilicsan & Dareemka Garaafiga Adag
Badeecadahan waxaa si weyn loogu isticmaalaa:
● Nidaamyada Epitaxy
● Fal-celiyeyaasha LPCVD
● Foornooyinka faafinta
● Nidaamyada koritaanka kiristaalka SiC
● Qalabka farsamaynta kulaylka heerkulka sare leh.
Iyadoo ay jirto kobaca degdegga ah ee SiC iyo wax soo saarka semiconductor-ka awoodda sare leh, baahida loo qabo qaybaha foornada ee saafiga sare leh, xasilloonida sare leh ayaa sii wadi doonta inay sii kordho. Xaaladdan oo kale, tiknoolajiyada SiC Cantilever Paddle waxay ahaan doontaa mid ka mid ah qaybaha aasaasiga ah ee taageeraya habaynta semiconductor-ka jiilka soo socda.
Waqtiga boostada: Maajo-14-2026