Umxholo wekhabhoni wesampulu nganye eqhekekileyo wahlukile, kunye nomxholo wekhabhoni we-A-2.5 awt.% kolu luhlu, okwenza izinto ezixineneyo ezingenazo iimbobo, ezenziwe ngamasuntswana e-silicon carbide asasazwa ngokulinganayo kunye ne-silicon ekhululekileyo. Ngokwanda kokongeza ikhabhoni, umxholo we-silicon carbide e-reaction-sintered uyanda kancinci kancinci, ubungakanani bamasuntswana e-silicon carbide buyanda, kwaye i-silicon carbide iqhagamshelwe omnye komnye ngendlela ye-skeleton. Nangona kunjalo, umxholo wekhabhoni ogqithisileyo unokukhokelela ngokulula kwi-carbon eseleyo emzimbeni oqhekekileyo. Xa i-carbon black inyuswa ngakumbi ukuya kwi-3a, ukugqwala kwesampuli akuphelelanga, kwaye "ii-interlayers" ezimnyama zibonakala ngaphakathi.
Xa ikhabhoni isabela kwi-silicon enyibilikisiweyo, izinga layo lokwanda komthamo liyi-234%, nto leyo eyenza ukuba isakhiwo se-silicon carbide esinomxube we-reaction-sintered sihambelane kakhulu nomxholo wekhabhoni kwi-billet. Xa umxholo wekhabhoni kwi-billet umncinci, i-silicon carbide eveliswa yi-silicon-carbon reaction ayanelanga ukuzalisa ii-pores ezijikeleze umgubo wekhabhoni, nto leyo ebangela ukuba kubekho inani elikhulu le-silicon ekhululekileyo kwisampuli. Njengoko umxholo wekhabhoni usanda kwi-billet, i-silicon carbide enesi-reaction-sintered inokuzalisa ngokupheleleyo ii-pores ezijikeleze umgubo wekhabhoni kwaye idibanise i-silicon carbide yokuqala kunye. Ngeli xesha, umxholo we-silicon ekhululekileyo kwisampuli uyancipha kwaye uxinano lomzimba osikiweyo luyanda. Nangona kunjalo, xa kukho ikhabhoni engaphezulu kwi-billet, i-silicon carbide yesibini eveliswa yi-reaction phakathi kwekhabhoni kunye ne-silicon ijikeleza ngokukhawuleza i-toner, okwenza kube nzima kwi-silicon enyibilikisiweyo ukuba iqhagamshelane ne-toner, nto leyo ebangela ukuba kubekho ikhabhoni eseleyo emzimbeni osikiweyo.
Ngokweziphumo ze-XRD, ukwakheka kwesigaba se-reaction-sintered sic yi-α-SiC, i-β-SiC kunye ne-free silicon.
Kwinkqubo yokutshisa i-reaction yobushushu obuphezulu, ii-athomu zekhabhoni ziyafuduka ziye kwimeko yokuqala kumphezulu we-SiC β-SiC ngokwenziwa kwe-silicon enyibilikisiweyo α-secondary. Ekubeni i-reaction ye-silicon-carbon yindlela eqhelekileyo yokusabela exothermic enobushushu obukhulu be-reaction, ukupholisa ngokukhawuleza emva kwexesha elifutshane le-reaction yobushushu obuphezulu obuzenzekelayo kwandisa i-susaturation yekhabhoni enyibilikisiweyo kwi-silicon engamanzi, ukuze amasuntswana e-β-SiC akhawuleze ngohlobo lwekhabhoni, ngaloo ndlela kuphuculwe iipropati zoomatshini zezinto. Ke ngoko, ukuphuculwa kweenkozo ze-β-SiC yesibini kuluncedo ekuphuculeni amandla okugoba. Kwinkqubo ye-Si-SiC composite, umxholo we-silicon ekhululekileyo kwizinto uyancipha ngokonyuka komxholo wekhabhoni kwizinto eziluhlaza.
Isiphelo:
(1) Ubuninzi be-slurry ephekiweyo ephendulayo iyanda ngokunyuka kobuninzi be-carbon black; Ixabiso le-pH li-alkaline kwaye liyanda kancinci kancinci.
(2) Njengoko umxholo wekhabhoni unyuka emzimbeni, uxinano kunye namandla okugoba kweeseramikhi ezixutywe ne-reaction-sintered ezilungiselelwe ngendlela yokucinezela kuqala zanda zaza zancipha. Xa ubungakanani bekhabhoni emnyama buphindwe kayi-2.5 kunexabiso lokuqala, amandla okugoba amathathu kunye noxinano olukhulu lwe-billet eluhlaza emva kokusila kwe-reaction ziphezulu kakhulu, eziyi-227.5mpa kunye ne-3.093g/cm3, ngokulandelanayo.
(3) Xa umzimba onekhabhoni eninzi kakhulu ungcoliswa, kuya kuvela imifantu kunye neendawo ezimnyama "zesandwich" emzimbeni womzimba. Isizathu sokuqhekeka kukuba igesi ye-silicon oxide eveliswa kwinkqubo yokungcoliswa kwe-reaction akulula ukuyikhupha, iqokelelana kancinci kancinci, uxinzelelo luyaphakama, kwaye isiphumo sayo sokugquma sikhokelela ekuqhekekeni kwe-billet. Kwindawo emnyama "yesandwich" ngaphakathi kwe-sinter, kukho inani elikhulu lekhabhoni elingabandakanyekanga kwi-reaction.
Ixesha lokuthumela: Julayi-10-2023