Okuqukethwe kwekhabhoni kokuqhekeka kwesampula ngayinye ehlanganisiwe kuhlukile, ngokuqukethwe kwekhabhoni okungu-A-2.5 awt.% kulolu hlu, kwakha into exinene cishe engenazo izimbobo, eyakhiwa izinhlayiya ze-silicon carbide ezisatshalaliswa ngokulinganayo kanye ne-silicon yamahhala. Ngokwanda kokungezwa kwekhabhoni, okuqukethwe kwe-silicon carbide ehlanganisiwe yokusabela kuyanda kancane kancane, usayizi wezinhlayiya ze-silicon carbide uyanda, futhi i-silicon carbide ixhunyaniswe nomunye nomunye ngesimo samathambo. Kodwa-ke, okuqukethwe kwekhabhoni okweqile kungaholela kalula ku-carbon esele emzimbeni ohlanganisiwe. Lapho i-carbon black ikhuliswa kakhulu ibe ngu-3a, ukushiswa kwesampula akuphelele, futhi kuvela "izingqimba" ezimnyama ngaphakathi.
Uma ikhabhoni isabela ne-silicon encibilikisiwe, izinga layo lokukhula komthamo lingama-234%, okwenza isakhiwo esincane se-carbide ye-silicon encibilikisiwe ehambisana kakhulu nokuqukethwe kwekhabhoni ku-billet. Uma okuqukethwe kwekhabhoni ku-billet kuncane, i-carbide ye-silicon ekhiqizwa yi-reaction ye-silicon-carbon ayanele ukugcwalisa ama-pores azungeze i-carbon powder, okuholela enanini elikhulu le-silicon yamahhala kusampula. Ngokwanda kokuqukethwe kwekhabhoni ku-billet, i-carbide ye-silicon encibilikisiwe esabelayo ingagcwalisa ngokugcwele ama-pores azungeze i-carbon powder futhi ixhumanise i-silicon carbide yokuqala ndawonye. Ngalesi sikhathi, okuqukethwe kwe-silicon yamahhala kusampula kuyancipha futhi ubuningi bomzimba oncibilikisiwe buyanda. Kodwa-ke, uma kunekhabhoni eningi ku-billet, i-carbide ye-silicon yesibili ekhiqizwa yi-reaction phakathi kwekhabhoni ne-silicon izungeza ngokushesha i-toner, okwenza kube nzima nge-silicon encibilikisiwe ukuthinta i-toner, okuholela ku-carbon esele emzimbeni oncibilikisiwe.
Ngokusho kwemiphumela ye-XRD, ukwakheka kwesigaba se-reaction-sintered sic yi-α-SiC, i-β-SiC kanye ne-silicon yamahhala.
Enkambisweni yokusabela kokushisa okuphezulu, ama-athomu ekhabhoni aya esimweni sokuqala ebusweni be-SiC β-SiC ngokwakhiwa kwe-silicon α-secondary encibilikisiwe. Njengoba ukusabela kwe-silicon-carbon kuyindlela evamile yokusabela kwe-exothermic enokushisa okukhulu kokusabela, ukupholisa okusheshayo ngemva kwesikhathi esifushane sokusabela kokushisa okuphezulu okuzenzakalelayo kwandisa ukuthungwa kwekhabhoni encibilikisiwe ku-silicon ewuketshezi, ukuze izinhlayiya ze-β-SiC zivele ngesimo sekhabhoni, ngaleyo ndlela kuthuthukiswe izakhiwo zemishini zento. Ngakho-ke, ukulungiswa kokusanhlamvu kwe-β-SiC kwesibili kuwusizo ekuthuthukiseni amandla okugoba. Kuhlelo lwe-Si-SiC oluhlanganisiwe, okuqukethwe kwe-silicon yamahhala ezintweni kwehla ngokwanda kokuqukethwe kwekhabhoni ezintweni zokusetshenziswa.
Isiphetho:
(1) Ukuqina kwe-slurry ephendukile ephendulayo kuyanda ngokwanda kwenani le-carbon black; Inani le-pH liyi-alkaline futhi liyanda kancane kancane.
(2) Ngokwanda kokuqukethwe kwekhabhoni emzimbeni, ubuningi namandla okugoba kwe-ceramics ezixutshwe nokusabela ezilungiselelwe ngendlela yokucindezela kuqala kwanda kwabe sekwehla. Lapho inani lekhabhoni emnyama liphindwe izikhathi ezingu-2.5 kunenani lokuqala, amandla okugoba anamaphuzu amathathu kanye nobuningi obukhulu be-billet eluhlaza ngemva kokusabela kuphezulu kakhulu, okungu-227.5mpa kanye no-3.093g/cm3, ngokulandelana.
(3) Uma umzimba onekhabhoni eningi kakhulu ushiswa, kuzovela imifantu kanye nezindawo ezimnyama "zesangweji" emzimbeni womzimba. Isizathu sokuqhekeka ukuthi igesi ye-silicon oxide ekhiqizwa enkambisweni yokushiswa kokusabela akulula ukuyikhipha, iqongelela kancane kancane, ingcindezi iyakhuphuka, futhi umphumela wayo wokujikijela uholela ekuqhekekeni kwe-billet. Endaweni "yesangweji" emnyama ngaphakathi kwesangweji, kunenani elikhulu lekhabhoni elingahilelekile ekusabeleni.
Isikhathi sokuthunyelwe: Julayi-10-2023