Ngokuhambela phambili kwetekhnoloji, ishishini le-optoelectronic, ngakumbi itekhnoloji ye-LED (Light Emitting Diode), ibe yinxalenye ebalulekileyo yeenkqubo zokukhanyisa, ukubonisa, kunye nonxibelelwano kuluntu lwanamhlanje. Inkqubo yokuvelisa ii-LED ibandakanya amanyathelo aliqela abalulekileyo, phakathi kwawo ukugrumba kudlala indima ebalulekileyo ekuqinisekiseni ukusebenza kakuhle kunye nomgangatho we-chip. Njengoko imfuno yokusebenza okuphezulu kunye nokucubungula okucolekileyo isanda, ukukhethwa kwezinto zokugrumba kuchaphazela kakhulu inkqubo iyonke. Kule meko, iSilicon Carbide (SiC), njengesixhobo sokuthwala esitsha, ifumene ingqwalasela enkulu ngokusetyenziswa kwayo ekugrumbeni kwe-LED.
Eli nqaku ligxile ekusetyenzisweni kweepleyiti zokuthwala zeSilicon Carbide kwiInkqubo yokukrola i-LED, ukuhlalutya iingenelo zazo, iimpawu zazo, kunye nendlela ezi zinto eziphucula ngayo inkqubo yokwenziwa kwe-LED.
I. Isishwankathelo seNkqubo yokuGcina i-LED
Ukugcaba kwinkqubo yokuvelisa i-LED kubhekisa kwindlela esetyenziswayo ukudala izakhiwo ezincinci kwi-substrate ye-semiconductor, ngaloo ndlela kufezekiswa iipropati ezifunekayo zokukhanya nezombane. Ukuchaneka kunye nomgangatho wenkqubo yokugcaba kuchaphazela ngokuthe ngqo ukusebenza kweetships ze-LED, kubandakanya ukukhanya, ubushushu bombala, kunye nokusebenza kakuhle kwamandla.
Ukugrumba kungahlulwahlulwa ngokwe-dry etching kunye ne-wet etching. Ukugrumba okomileyo kubandakanya ukusetyenziswa kwe-plasma okanye ii-laser ukugrumba kwaye kudla ngokusetyenziswa kwizicelo ezichanekileyo nezikhetheke kakhulu. Ukugrumba okomileyo, kwelinye icala, kusebenzisa izisombululo zeekhemikhali ukugrumba izinto kwaye kudla ngokusetyenziswa kwiindlela ezinkulu zokunyanga. Nokuba loluphi na uhlobo lokugrumba, ukhetho lwezinto zepleyiti yokuthwala luchaphazela kakhulu iziphumo zokugrumba kunye nomgangatho wokugqibela wetship.
II. Intshayelelo kwiSilicon Carbide (SiC)
I-Silicon Carbide (i-SiC)sisixhobo esidityanisiweyo esenziwe nge-silicon (Si) kunye ne-carbon (C). Ineempawu ezininzi ezintle zomzimba nezekhemikhali, nto leyo eyenza ukuba ifaneleke kwiindlela zobushushu obuphezulu, amandla aphezulu, kunye nokusetyenziswa kwamaza aphezulu. I-SiC yi-semiconductor ye-wide-bandgap, oko kuthetha ukuba inokusebenza ngokufanelekileyo phantsi kweemeko ezinzima, ezifana ne-voltage ephezulu kunye namaza aphezulu.
Iimpawu eziphambili zeSiC ziquka:
1.Ukuqhuba okuphezulu kobushushu: I-SiC inombane wobushushu we-120-170 W/m·K, ongaphezulu kakhulu kunezixhobo ze-silicon (Si) zemveli. Oku kuvumela i-SiC ukuba ikhuphe ubushushu ngempumelelo, igcine uzinzo kwizicelo zamandla aphezulu.
2. Ukumelana nobushushu obuphezulu: I-SiC inokumelana namaqondo obushushu aphezulu kakhulu (ngaphezulu kwe-1000°C) ngaphandle kokulahlekelwa kukusebenza, nto leyo eyenza ukuba ifaneleke kwiindawo ezinobushushu obuphezulu.
3.Uzinzo lweKhemikhali oluGqwesileyo: I-SiC ayixhathisi kakhulu kwiimpendulo ezininzi zeekhemikhali, nto leyo enika ukumelana okunamandla nokugqwala.
4. I-Bandgap ebanzi: I-bandgap ebanzi yeSiC ivumela ukuba isebenze ngokufanelekileyo phantsi kweemeko ze-voltage ephezulu kunye ne-frequency ephezulu, nto leyo eyenza ukuba ifaneleke kwiindidi ezahlukeneyo zobuchwepheshe obuphambili.
Ezi mpawu zenza iSiC ibe yinto ethembisayo yokusetyenziswa kwimveliso ye-LED, ingakumbi kwinkqubo yokugrumba.
III. Iingenelo zeePlati zeSilicon Carbide Carrier kwi-LED Etching
1.Ukumelana nobushushu obuphezulu
Ngexesha lenkqubo yokugrumba i-LED, ingakumbi xa kugrumba okomileyo, ipleyiti yokuthwala ichaphazeleka kubushushu obuphezulu ngenxa yamandla avela kwi-plasma okanye kwi-laser. Izixhobo zemveli ezifana ne-silicon (Si) okanye i-quartz (SiO₂) zinokulahlekelwa kukuzinza kwesakhiwo okanye zikhule ngobushushu, nto leyo ekhokelela ekuchanekeni okuphantsi. I-silicon carbide, enokumelana kwayo nobushushu obuphezulu, inokugcina uzinzo kwiindawo ezinobushushu obuphezulu ngaphandle kokuguquka okanye ukonakala, iqinisekisa ukuchaneka kwenkqubo yokugrumba.
2.Ulawulo oluPhuculweyo lweThermal
Ulawulo lobushushu yeyona nto iphambili ekuvelisweni kwe-LED. Iitships ze-LED ezinamandla aphezulu zivelisa ubushushu obukhulu ngexesha lokusebenza, kwaye ukuba azisuswanga kakuhle, zinokuchaphazela kakubi ukusebenza kwetships. Ukuqhuba kobushushu okuphezulu kwe-SiC kuqhuba ubushushu kude netships ze-LED ngokufanelekileyo kwaye kubusasaze kwindawo engqongileyo, nto leyo engagcini nje ngokuphucula iziphumo zobushushu ngexesha lenkqubo yokugrumba kodwa ikwaphucula ukusebenza kwayo yonke kunye nobude bexesha le-LED.
3.Ungcoliseko oluNciphisiweyo kunye nokuLungelelaniswa okuPhucukileyo
Ngexesha lenkqubo yokugrumba i-LED, izinto ezikwipleyiti yokuthwala kufuneka zibe nozinzo oluhle kakhulu lweekhemikhali ukuze kuthintelwe ukusabela ngezinto ezibangela ukugrumba okanye iigesi, ezinokubangela ungcoliseko okanye zichaphazele ukuchaneka kokugrumba. Ukumelana okunamandla kwe-SiC kwiikhemikhali ezininzi ezibangela ukugrumba kwenza ukuba ikwazi ukugcina uzinzo oluhlala ixesha elide kwiindawo ezinzima zeekhemikhali. Oku kuqinisekisa ukuba inkqubo yokugrumba ihlala ichanekile kwaye ihambelana, ngelixa kuthintelwa ukusabela kweekhemikhali ezingafunekiyo ezinokuchaphazela kakubi ukusebenza kwe-LED.
4.Intsalela yokuGcina encitshisiweyo
Izixhobo zesiqhelo zepleyiti yokuthwala zinokusabela kwiiarhente zokugrumba, zishiye iintsalela ezinzima ukuzisusa, nto leyo enokonakalisa umgangatho wokugrumba kwaye ichaphazele kakubi ukusebenza kweetships ze-LED. I-SiC, ngenxa yokungangeni kwayo kwiikhemikhali, ithintela ngempumelelo ukuveliswa kweentsalela ezinjalo, nto leyo ekhokelela kwisivuno esiphezulu kunye nokuthembeka okuphuculweyo kwemveliso yokugqibela.
5.Ukuqina kunye nozinzo oluphezulu
I-silicon carbide ayibonisi nje kuphela iipropati zomzimba ezintle kodwa ikwanobomi obude benkonzo. Xa ithelekiswa nezinye izinto, i-SiC ayikhathazeki kakhulu kukudinwa, ukuguga, okanye ukuwohloka ngokuhamba kwexesha, nto leyo enciphisa iindleko zokugcinwa kunye nokuphindaphinda kokutshintshwa. Oku kwandisa uzinzo lulonke lomgca wemveliso.
IV. Imingeni kunye nezisombululo zeepleyiti zeSiC Carrier kwi-LED Etching
Nangona iSiC ineengenelo ezininzi ekukrolweni kwe-LED, kukho imingeni ethile. Okokuqala, ukusetyenzwa kweSiC kunzima ngenxa yobunzima bayo obukhulu kunye nokuqhekeka kwayo. Kufuneka kuthathwe ingqalelo ekhethekileyo xa kusikwa nokupolisha ukuze kuthintelwe ukonakala kwezinto. Okwesibini, ixabiso leepleyiti zokuthwala zeSiC liphezulu xa lithelekiswa nezixhobo zemveli, nto leyo enokunyusa ixabiso lilonke lemveliso ye-LED.
Ukujongana nale mingeni, abaphandi kunye neenjineli basebenza ekuphuculeni iinkqubo zokuvelisa izixhobo zeSiC kunye nokuhlola ubuchwepheshe obutsha bokucubungula ukunciphisa iindleko zemveliso kunye nokuphucula ukusebenza kakuhle. Umzekelo, ukuphucula inkqubo yokukhula kwekristale kunye nokwamkela iindlela zokusika eziphambili kunokunciphisa ngempumelelo iindleko zeepleyiti zokuthwala zeSiC. Ukongeza, ubuchwepheshe obutsha bokugquma umphezulu bunokuphucula ukuqina kunye nokumelana nokugqwala kweSiC, buphucule ngakumbi ukusebenza kwayo ekugcabeni kwe-LED.
Ixesha lokuthumela: Okthobha-22-2025