Izicelo zokuCoating zeTaC kwiGaN/SiC Semiconductor Manufacturing

I-TaC coating yi-ceramic layer esebenza kakhulu, ibalulekile ekwenzeni i-semiconductor ephucukileyo. Ibalulekile ekukhuleni kwekristale enye yeSiC kunye neenkqubo zokukhula kwe-epitaxial yeGaN/SiC. Imarike ye-semiconductor yeGaN/SiC ifumana ukwanda ngokukhawuleza. Le marike ifikelele kwi-USD 7.523 yeebhiliyoni ngo-2024. Iingcali ziqikelela i-CAGR ye-16.56% ukusuka ngo-2025 ukuya ku-2035.

Izinto ezibalulekileyo ekufuneka ziqwalaselwe

• Ukwaleka kweTaCyimaleko ekhethekileyo. Inceda ekwenzeni iitships zekhompyutha zibe ngcono. Isebenza kakuhle kwiindawo ezishushu kakhulu.
• Olu gqubuthelo luthintela izinto ezimbi ukuba zingangeni kwiitships. Luyenza iitships zicoceke kwaye ziqine.
• I-TaC coating ingcono kunezinye izinto. Inceda ekwenzeni iitships ezilungileyo. Oku kwenza iikhompyutha kunye neefowuni zisebenze ngcono.

Ukuqonda i-TaC Coating: Iimpawu kunye nokusebenza

Ukuchaza i-TaC Coating kunye neempawu zayo eziphambili

Ukwaleka kweTaCyi-ceramic layer esebenza kakuhle. I-Tantalum carbide (TaC) isebenza njenge-icandelo eliphambili leekhemikhaliAbaphandi baphandaInkqubo ye-Ta-CN, apho i-TaC1-xNx imele ukwakheka kweekhemikhali. Isakhiwo esisisiseko seemvavanyo yi-fcc structured Ta-C. Izakhiwo ze-binary ezizinzileyo ziquka i-fcc-TaC kunye ne-hex-TaN. Izithuba ezingezizo zesinyithi zibaluleke ngakumbi kunezithuba zesinyithi zokuzinzisa isakhiwo se-cubic kwi-Ta-C. I-Physical Vapor Deposition (PVD) inokuzinzisa i-fcc structured Ta-CN ngenxa ye-kinetics elinganiselweyo kunye nokungeniswa kweziphene zesakhiwo. Utshintsho lwesigaba ukusuka kwi-single-phase fcc-Ta1-y-zCyNz ukuya kwi-fcc kunye ne-hex Ta1-y-zCyNz lwenzeka malunga ne-x=0.68 kwi-TaC1-xNx notation. Abavelisi balungiselela ii-TaC coatings ngeiintlobo ezine zezakhiwo zekristalekwii-carbon/carbon composites. Ezi zakhiwo ziquka isakhiwo sekristale esicacileyo, esibonisa ukumelana okungcono kokukhupha.

Le nto ikwabonisa iimpawu ezimangalisayo zoomatshini. Umzekelo, i-multilayer coating ene-Ta(C,N) (305 nm modulation) ibonisa ubunzima be-24.5 ± 0.8 GPakunye neYoung's Modulus ye-263.2 ± 16.6 GPa. I-TaC0.71 ibonisa ubunzima be39.3 ± 1.0 GPa, kunye nomlinganiselo othile ofikelela kwi-40 GPa. I-indentation modulus yayo yi-430 GPa, kwaye i-Young's Modulus ebaliweyo yeTaC imalunga ne-500 GPa.

Uzinzo oluNgaphezulu oluKhethekileyo lweTaC Coating

Le nto igqwesile kwiindawo ezinobushushu obugqithisileyo. Ihlala izinzile kumaqondo obushushu angaphezu kwama-2000°C. Iqondo layo lokunyibilika lifikelela kwindawo emangalisayo4273°C, nto leyo eyenza ukuba ibe yenye yezona zinto zinamandla okumelana nobushushu obuphezulu ezaziwayo. Le nto inobushushu obuphezulu bokusebenzaukudlula i-2200°C.

I-TaC ibonisa enye yezona ndawo ziphezulu zokunyibilika phakathi kwezinto ezaziwayo, ilinganiswa ngokumangalisayo4041 KEli nqanaba lokunyibilika lidlula ezinye izinto ezininzi ezichasene ne-refractory, kuquka i-tungsten. Uvavanyo lwelabhoratri luqinisekisa amandla e-TaC okugcina ukuthembeka kwesakhiwo kumaqondo obushushu angaphezulu kwe-3000°C. I-TaC idlula zombini ii-ceramic kunye nee-metal alloy coats ekugcineni ukuthembeka kwesakhiwo kula maqondo obushushu agqithisileyo. Ngelixa ubushushu bayo bokunyibilika (4041 K) buphantsi kunobo be-HfC, i-TaC ihlala ibonisa ukumelana nobushushu okuphezulu kunye nozinzo lweekhemikhali xa kuthelekiswa nee-ceramic kunye nee-metal alloy coatings zemveli.

Ukumelana neekhemikhali kunye nokucoceka okuphezulu kakhulu kweTaC Coating

Iingubo zeTaC ziyabonisauzinzo oluhle kakhulu lweekhemikhaliZiyakwazi ukumelana ngempumelelo neempendulo zezinto ezahlukeneyo ezirhabaxa, kuquka ii-asidi kunye neziseko. Olu phawu luzenza zibe lukhetho oluthembekileyo kwizicelo ezifuna ukwenziwa kwimizi-mveliso. Iingubo zeTaC zibonisauzinzo oluhle lweekhemikhali, ebonisa ukumelana nee-asidi, ii-alkali, iityuwa, kunye nee-reagents ze-organic. Ngaphezu koko, azichaphazeleki ziintsimbi ezinyibilikisiweyo, i-slag, kunye nezinye izinto ezibangela ukubola. Iingubo ze-TaC zineuzinzo oluqinileyo lweekhemikhali, ezibenza bakwazi ukumelana neempendulo ezininzi zeekhemikhali, ingakumbi ezo ziquka iiasidi kunye neesiseko.

Ubunyulu obuphezulu lolunye uphawu olubalulekileyo lwale nto. Abavelisi bayila ii-TaC coatings ukuzeukunciphisa ukungcolaezifana ne-titanium, i-boron, kunye ne-aluminium. Iimveliso ezisebenzisa ii-TaC coating zibonisa i-carbon encinci, i-oxygen, i-nitrogen, kunye nezinye izinto ezingcolileyo, nto leyo enegalelo ekukhuleni kwekristale ecocekileyo. Amanqanaba okungcola kwi-TaC coating anokuba phantsi njenge-<5 ppm, angaphantsi kakhulu kune-SiC coating okanye i-graphite engenanto (enokuba ne-260 ppm oxygen).

Ukuqina kobushushu kunye noomatshini kweTaC Coating

Le nto inomoya obonakalayo wokuhambisa ubushushu. Ilinganisa malunga22 W·m⁻¹·K⁻¹Kwii-W-TaC composites, ukuhanjiswa kobushushu beTaC kususela kwi15–35 W·m⁻¹·K⁻¹kumaqondo obushushu angama-750 °C, 850 °C, kunye nama-950 °C. Olu bushushu buphezulu lunceda ngempumeleloukuphelisa ubushushungexesha leenkqubo zobushushu obuphezulu. Ikwathintela ubushushu obugqithisileyo bendawo.

Ukuqina koomatshini kwesi sixhobo nako kuyaphawuleka. I-NiCrBSi + Ta coating ibonakalisiweukomelela okuphezulu kokuqhekeka kunye nokumelana okuphuculweyo kokuguguleka kunye nokunamathelaxa kuthelekiswa nengubo yeNiCrBSi engenazo i-tantalum. I-Tantalum yonyusa ukumelana nokuguguleka kwengubo esekwe kwi-Ni ngokwenza amasuntswana amancinci e-TaC. Kwi-WC–6Co carbides ezifakwe isamente, yongeza0.6 wt% TaCkubangele ukumelana nokuguguleka okufanelekileyo, kunciphisa ukulahleka kobunzima bokuguguleka ukuya kwi-0.15 mg kwaye kufezekisa i-coefficient ezinzileyo yokungqubana malunga ne-0.3. I-A (Ta,Zr,Nb)C ceramic yesigaba esinye ibonakalise ukuqina kokuqhekeka kwe2.9 MPa m1/2kubushushu begumbi.

Ukwaleka kweTaC kwiinkqubo ze-Advanced GaN/SiC Semiconductor

Ukuphucula ukukhula kweSiC Single Crystal ngeTaC Coating

Ukwaleka kweTaCIdlala indima ebalulekileyo ekuphuculeni ukukhula kwekristale enye yeSiC. Iphucula kakhulu umgangatho wekristale kwaye inciphisa iziphene. Umzekelo, inciphisa iziphene ze-micropipe ukuya kuthi ga kwi99.7%. Ikwanciphisa ukusasazeka kwemiphetho nge-80.5%. Iingubo zeTaC zithintela ukugqwala kwezinto zegraphite kwindawo eshushu neshushu kakhulu yomphunga wesilicon. I-graphite engagqunywanga iyagqwala, ikhuphe iinxalenye zecarbon. Ezi nxalenye zikhokelela ekufakweni kwekhabhoni kwaye zonyusa iziphene kwiikristale zeSiC ezikhulayo. Ngokukhusela igraphite, iingubo zeTaC ziyaqinisekisaiikristale ezicocekileyo.

Ukusetyenziswa kweengubo zeTaC kubangela ukuba iikristale zeSiC zibe mdaka omncinci onekhabhoni, ioksijini, kunye nenitrogen. Kunciphisa iziphene zomphetho kwaye kuphucula ukufana kokumelana. Ngaphezu koko, kunciphisa kakhulu uxinano lwee-micropores kunye nee-etching pits.Izifundo zoshishinoibonisa ukuba i-TaC coating isombulula iziphene zekristale. Ikwanciphisa amathuba okwakheka kwe-polycrystalline kumda weekristale zeSiC. Uphando oluvela kwiYunivesithi yaseMpuma Yurophu eKorea luqinisekisa ukuba ii-graphite crucibles ezifakwe iTaC zithintela ngokufanelekileyo ukufakwa kwe-nitrogen. Eli nyathelo linciphisa ukuveliswa kwee-microtubules kunye nezinye iziphene. Ii-crucibles ezifakwe iTaC zigcina ubunzima obungatshintshiyo kwaye zibukeka ziqinile emva kokusetyenziswa ixesha elide. Abavelisi banokuziphinda-phinda amaxesha amaninzi. Zinika ubomi benkonzo obufikelela kwiiiyure ezingama-200, ukuphucula uzinzo kunye nokusebenza kakuhle kwenkqubo yemveliso.

Ukuphucula ukukhula kwe-GaN/SiC Epitaxial nge-TaC Coating

Ukugqunywa kweTaC kubaluleke ngokulinganayo ekwenzeni ngcono ukukhula kweGaN/SiC epitaxial. Le nkqubo ifuna indawo ezinzileyo necocekileyo ukuze kufezekiswe iileya zeGaN ezikumgangatho ophezulu kwi-substrates zeSiC. Uzinzo olukhethekileyo lobushushu obuphezulu beTaC luqinisekisa ukuba izinto zenkqubo zihlala zilungile ngokwesakhiwo. Olu zinzo luthintela ukuwohloka kwezinto nokuba kumaqondo obushushu aphezulu afunekayo kwi-epitaxy. Ukuqhuba kwayo okuphezulu kobushushu kunceda ukugcina ukusasazwa kobushushu okuchanekileyo nokulinganayo kuyo yonke i-substrate. Olu lungelelwano lubalulekile kubukhulu befilimu obuhambelanayo kunye nesakhiwo sekristale.

Ukungangeni kweekhemikhali kwe-TaC coating kuthintela iimpembelelo ezingafunekiyo phakathi kweegesi zenkqubo kunye nezixhobo ze-reactor. Iimpembelelo ezinjalo zingafaka ukungcola kumaleko we-GaN okhulayo. Ngokubonelela ngomphezulu ozinzileyo nongaphenduliyo, i-TaC ikhuthaza indawo yokukhula ecocekileyo. Le ndawo ibalulekile ekufezekiseni iipropati zombane ezifunekayo kunye nokusebenza kwezixhobo ze-GaN. Ukuqina koomatshini kwe-TaC kukwanegalelo ebudeni bexesha leenxalenye ze-reactor. Oku kuhlala kunciphisa ixesha lokungasebenzi kunye nokugcinwa, nto leyo ephucula ngakumbi inkqubo yokukhula kwe-epitaxial iyonke.

Ukuthintela Ungcoliseko kunye Nokuphucula Isivuno Nge-TaC Coating

Ukuthintela ungcoliseko kubaluleke kakhulu kwimveliso ye-semiconductor, kwaye ugqubuthelo lwe-TaC lugqwesile kule ndawo.uhlobo olungasebenziyo ngokwekhemikhaliUkugqunywa kweTaC kuthintela iimpendulo ezingafunekiyo. Ezi mpendulo zingafaka izinto ezingcolisayo kwindawo yokukhula. Isebenza njengomqobo oqinileyo nxamnye nokungcola kwangaphandle. Le propati iqinisekisa ukuveliswa kweekristale ezicocekileyo kakhulu. Ukugqunywa kweTaC kujongana nongcoliseko kunye neziphene zomphetho ngokwenza umaleko okhuselayo. Lo maleko umelana nokubekwa kwezinto kunye nokunamathela kwamasuntswana. Unciphisa ukungena kokungcola kwaye unciphisa amathuba okuba neziphene zomphetho ezenzeka kwiindawo ezingagqunywanga.

Ubunyulu obuphezulu kakhulu beengubo zeTaC, ezinamazinga okungcola aphantsi njenge-<5 ppm, buguqulela ngokuthe ngqo kwizinto ezicocekileyo zeSiC kunye neGaN. Olu coceko lunciphisa ukwanda kweziphene ezahlukeneyo, kubandakanya ii-micropores kunye ne-etch pits.Uphando oluvela kwiYunivesithi yaseMpuma Yurophu eKoreaibonisa ukuba ii-graphite crucibles ezigqunywe nge-tantalum carbide (TaC) zithintela ngokufanelekileyo ukufakwa kwe-nitrogen kwiikristale ze-SiC. Olu thintelo lunciphisa ngokuthe ngqo iziphene ezifana nee-micropipes, ngaloo ndlela luphucula umgangatho wekristale. Ngokunciphisa ungcoliseko kunye neziphene, i-TaC coating iphucula kakhulu isivuno siphela see-wafers ze-semiconductor ezikumgangatho ophezulu. Olu phuculo lukhokelela ekwenziweni kwezixhobo ezithembekileyo nezisebenzayo.

Kutheni i-TaC Coating iphumelela ngakumbi kwezinye iindlela

Uthelekiso lweNtsebenzo: I-TaC Coating vs. I-SiC Coating kunye ne-Bare Graphite

Ukwaleka kweTaCInika iingenelo ezibalulekileyo kunezinye izinto ezifana ne-SiC coating kunye ne-graphite engenanto kwimveliso ye-semiconductor. Iipropati zayo ezigqwesileyo zenza ukuba ibe lolona khetho lukhethwayo kwizicelo ezifuna amandla. I-TaC coating inika ukusebenza okuphuculweyo kwiindawo ezibalulekileyo. Ezi ndawo ziquka ukuzinza kobushushu obuphezulu, ukumelana neekhemikhali, kunye nobunyulu. Ezi zibonelelo ziguqulela ngokuthe ngqo ekusebenzeni kakuhle kwenkqubo kunye nomgangatho wemveliso.

Ukumelana nokugqwala okuphezulu kunye namanqanaba okungcola kweTaC Coating

I-TaC coating ibonisa ukumelana okuphezulu kwe-etch. Le propati ibalulekile kwizixhobo ezisebenza kwiindawo ezinzima ze-plasma. I-CVD TaC coatings ibonelela ngokumelana okuhle kakhulu nokugqwala kweekhemikhali kunye nokuwohloka kobushushu kwizixhobo zokugqwala. Olu kumelana luqinisekisa ukuthembeka kwesakhiwo sezixhobo kwiindawo ze-plasma, okuvumela ukugqwala okuchanekileyo. Iipropati zokulwa nokunamathela kwe-coating zikwanciphisa ukungcola kwamasuntswana, ziphucula ukuthembeka kwenkqubo. Ngokubanzi, i-TaC coatings inciphisa ukuguguleka kwezixhobo kwaye iphucula ukusebenza kakuhle kwemveliso, yandisa ubomi bezixhobo kwiindawo ezisetyenziswa kwi-plasma. I-Tantalum carbide (TaC) coatings yandisa kakhulu ubomi bezixhobo kwiindawo ze-plasma. Zisebenza njengomqobo wokukhusela. Zikhusela izixhobo ze-semiconductor ezifana nee-electrodes, ii-sensors, kunye namagumbi ekuwohlokeni. Olu konakala lubangelwa ziigesi ezigqwala, amaqondo obushushu aphezulu, kunye neenkqubo zeekhemikhali. Amagumbi okugqwala agqunywe yi-TaC-coating coating coating coating coating coating coating coating coating coating coating coating coating coating coating coating. Olu khuselo lunciphisa ixesha lokungasebenzi, iindleko zokugcinwa, kunye nokutshintshwa, okuphucula imveliso iyonke. Ngaphezu koko, i-TaC coatings ziqhayisa ngobunyulu obuphezulu kakhulu, kunye namanqanaba okungcola ahlala engaphantsi kwe-5 ppm. Eli nqanaba liphantsi kakhulu kune-SiC coating okanye i-graphite engenanto, enokuba ne-oxygen efikelela kwi-260 ppm.

Ukumelana noTshabalalo oluShushu kunye neZakhono zoBushushu obuPhezulu beTaC Coating

Imiboniso yokugquma yeTaCukumelana okugqwesileyo koxinzelelo lobushushuLe propati iluncedo kakhulu kwizinto ezitshintsha ngokukhawuleza nangokubalulekileyo kubushushu. Iqinisekisa ukuthembeka nokusebenza kwazo kwiindawo ezifuna amandla. Ezi zinto zigcina ukuthembeka kwazo nokuba ziphantsi kobushushu obugqithisileyo.Ubushushu bayo obuphezulu bokusebenza budlula nezinye iindlela.

Ukugquma kweTaC kunciphisa kakhulu ungcoliseko kwaye kuphucula ulawulo lobushushu kwimveliso ye-semiconductor. Inika ukusebenza okuphezulu xa kuthelekiswa nezixhobo eziqhelekileyo ezifana nokugquma kweSiC kunye ne-graphite engenanto. Ezi zinto ziphambili zibalulekile ekuphuculeni isivuno kunye nokuthembeka kwiinkqubo ze-semiconductor zeGaN/SiC, nto leyo eqhuba inkqubela phambili kushishino.

FAQ

Yintoni umsebenzi ophambili we-TaC coating kwimveliso ye-semiconductor?

Ukwaleka kweTaCisebenza njengomaleko we-ceramic osebenza kakuhle. Ikhusela izinto, inciphisa ungcoliseko, kwaye ilawula ubushushu ngokufanelekileyo. Oku kuqinisekisa iimeko ezifanelekileyo zokukhula kwekristale.

I-TaC coating ithelekiswa njani ne-SiC coating kunye ne-graphite engenanto?

I-TaC coating inika uzinzo oluphezulu kubushushu obuphezulu, ukumelana neekhemikhali, kunye nobunyulu obuphezulu kakhulu. Iphumelela kakhulu kune-SiC coating kunye ne-graphite engenanto kwizicelo ezibalulekileyo ze-semiconductor.

Zeziphi iingenelo ezithile eziziswa yi-TaC coating kwiinkqubo ze-GaN/SiC?

I-TaC coating iphucula ukukhula kwe-SiC single crystal kwaye iphucula ukukhula kwe-epitaxial ye-GaN/SiC. Ithintela ungcoliseko, iphucula ulawulo lobushushu, kwaye yonyusa isivuno kunye nokuthembeka ngokubanzi.