Izicelo Zokumboza ze-TaC ekukhiqizweni kwe-GaN/SiC Semiconductor

Isembozo se-TaC siwungqimba lwe-ceramic olusebenza kahle kakhulu, olubalulekile ekwakhiweni kwe-semiconductor okuthuthukisiwe. Kubalulekile ekukhuleni kwe-SiC single crystal kanye nezinqubo zokukhula kwe-GaN/SiC epitaxial. Imakethe ye-semiconductor ye-GaN/SiC ibhekene nokukhula okusheshayo. Le makethe ifinyelele ku-USD 7.523 billion ngo-2024. Ochwepheshe babikezela i-CAGR engu-16.56% kusukela ngo-2025-2035.

Izinto Ezibalulekile Okufanele Uzicabangele

• Ukugqoka kwe-TaCungqimba olukhethekile. Lusiza ekwenzeni ama-computer chip abe ngcono. Lusebenza kahle ezindaweni ezishisa kakhulu.
• Lokhu kugqoka kuvimbela izinto ezimbi ukuthi zingangeni kuma-chips. Kwenza ama-chips ahlanzeke futhi aqine.
• Ukwemboza nge-TaC kungcono kunezinye izinto. Kusiza ekwenzeni ama-chip amaningi amahle. Lokhu kwenza amakhompyutha namafoni asebenze kangcono.

Ukuqonda i-TaC Coating: Izakhiwo kanye Nokusebenza

Ukuchaza i-TaC Coating kanye Nezimpawu Zayo Eziyinhloko

Ukugqoka kwe-TaCiwungqimba lwe-ceramic olusebenza kahle kakhulu. I-Tantalum carbide (TaC) isebenza njenge-ingxenye eyinhloko yamakhemikhaliAbacwaningi baphenyaUhlelo lwe-Ta-CN, lapho i-TaC1-xNx imelela ukwakheka kwamakhemikhali. Isakhiwo esiyisisekelo sokuhlolwa yi-fcc structured Ta-C. Izakhiwo ezimbili ezizinzile zifaka phakathi i-fcc-TaC kanye ne-hex-TaN. Izikhala ezingezona ezensimbi zibaluleke kakhulu kunezikhala zensimbi ukuze kuqiniswe isakhiwo se-cubic ku-Ta-C. Ukufakwa Komswakama Ongokwenyama (i-PVD) kungazinzisa i-fcc structured Ta-CN ngenxa ye-kinetics elinganiselwe kakhulu kanye nokwethulwa kwamaphutha esakhiwo. Ushintsho lwesigaba kusuka ku-single-phase fcc-Ta1-y-zCyNz kuya ku-fcc kanye ne-hex Ta1-y-zCyNz lwenzeka cishe ku-x=0.68 ku-TaC1-xNx notation. Abakhiqizi balungiselela izembozo ze-TaC ngeizinhlobo ezine zezakhiwo zekristalukuma-carbon/carbon composites. Lezi zakhiwo zifaka isakhiwo sekristalu esicacile, esibonisa ukumelana okungcono kokukhipha umoya.

Lokhu kwaziswa futhi kubonisa izakhiwo ezimangalisayo zemishini. Isibonelo, ukugqoka okunezingqimba eziningi okune-Ta(C,N) (305 nm modulation) kubonisa ubulukhuni be-24.5 ± 0.8 GPakanye ne-Young's Modulus engu-263.2 ± 16.6 GPa. I-TaC0.71 ikhombisa ubulukhuni be39.3 ± 1.0 GPa, kanti ezinye izilinganiso zifinyelela ku-40 GPa. I-indentation modulus yayo ingu-430 GPa, kanti i-Young's Modulus ebaliwe ye-TaC icishe ibe ngu-500 GPa.

Ukuzinza Okumangalisayo Kokushisa Okuphezulu Kokumbozwa kwe-TaC

Lokhu kuyasebenza kakhulu ezindaweni ezishisa kakhulu. Kuhlala kuzinzile emazingeni okushisa angaphezu kuka-2000°C. Iphuzu lokuncibilika kwalo lifinyelela izinga elimangalisayo4273°C, okwenza kube ngenye yamakhemikhali amelana nokushisa aphezulu kakhulu aziwayo. Le nto inokushisa okuphezulu kokusebenzaamazinga okushisa angaphezu kuka-2200°C.

I-TaC ikhombisa enye yezindawo zokuncibilika eziphakeme kakhulu phakathi kwezinto ezaziwayo, ezilinganiswa ngokulinganisa okumangalisayo4041 KLeli phuzu lokuncibilika lidlula ezinye izinto eziningi eziphikisayo, okuhlanganisa ne-tungsten. Ukuhlolwa kwelebhu kuqinisekisa ikhono le-TaC lokugcina ubuqotho besakhiwo emazingeni okushisa angaphezu kuka-3000°C. I-TaC idlula kokubili izembozo ze-ceramic neze-alloy zensimbi ekugcineni ubuqotho besakhiwo kula mazinga okushisa aphezulu. Ngenkathi izinga lokushisa layo lokuncibilika (4041 K) liphansi kunele-HfC, i-TaC ikhombisa njalo ukumelana nokushisa okuphezulu kanye nokuqina kwamakhemikhali uma kuqhathaniswa nezembozo zendabuko ze-ceramic neze-alloy zensimbi.

Ukumelana Kwamakhemikhali kanye Nokuhlanzeka Okuphezulu Kokumbozwa kwe-TaC

Izimbozo ze-TaC ziyabonisaukuzinza kwamakhemikhali okuhle kakhulu. Zimelana ngempumelelo nokusabela ngezinto ezahlukahlukene ezibolayo, okuhlanganisa ama-asidi nezisekelo. Lesi sici sizenza zibe ukukhetha okuthembekile kwezicelo zezimboni ezidingayo. Ukuboniswa kwezembozo ze-TaCukuzinza okuhle kwamakhemikhali, okubonisa ukumelana nama-acid, ama-alkali, usawoti, kanye nama-reagents e-organic. Ngaphezu kwalokho, azithinteki yizinsimbi ezincibilikisiwe, i-slag, kanye nezinye izinto ezibolile. Izembozo ze-TaC zinayoukuzinza okuqinile kwamakhemikhali, okubenza bakwazi ukumelana nezinhlobo eziningi ze-chemical reactions, ikakhulukazi lezo ezihilela ama-acid kanye nezisekelo.

Ukuhlanzeka okuphezulu kungenye imfanelo ebalulekile yale nto. Abakhiqizi baklama izembozo ze-TaC ukuzenciphisa ukungcolanjenge-titanium, i-boron, ne-aluminium. Imikhiqizo esebenzisa izembozo ze-TaC ibonisa ukungcola okuncane kakhulu, i-oxygen, i-nitrogen, nokunye, okufaka isandla ekukhuleni kwekristalu okuhlanzekile. Amazinga okungcola ekumbozweni kwe-TaC angaba ngaphansi kuka-<5 ppm, aphansi kakhulu kunokwembozwa kwe-SiC noma i-graphite engenalutho (engaba ne-oxygen engu-260 ppm).

Ukuqina Kokushisa Nokwemishini Kokumbozwa kwe-TaC

Le nto inokushisa okukhulu. Ilinganisa cishe22 W·m⁻¹·K⁻¹Kuma-composites e-W-TaC, ukuhanjiswa kokushisa kwe-TaC kusuka ku-15–35 W·m⁻¹·K⁻¹emazingeni okushisa angu-750 °C, 850 °C, kanye no-950 °C. Lokhu kushisa okuphezulu kusiza ngempumeleloukuqeda ukushisangesikhathi sezinqubo zokushisa okuphezulu. Kuvimbela nokushisa ngokweqile kwendawo.

Ukuqina komshini kwale nto nakho kuyaphawuleka. Isembozo se-NiCrBSi + Ta sibonisiweukuqina okuphezulu kokuphuka kanye nokumelana okuthuthukisiwe kokuguguleka nokunamathelayouma kuqhathaniswa nesembozo se-NiCrBSi esingenayo i-tantalum. I-Tantalum ithuthukisa ukumelana nokuguguleka kwesembozo esisekelwe ku-Ni ngokwenza izinhlayiya ezincane ze-TaC. Kuma-carbide aqiniswe nge-WC–6Co, kungezwa0.6 wt% TaCkuholele ekumelaneni kahle nokuguguleka, kunciphisa ukulahlekelwa isisindo sokuguguleka kube ngu-0.15 mg futhi kufezwe i-coefficient eqinile yokungqubuzana cishe okungu-0.3. I-A (Ta,Zr,Nb)C i-ceramic yesigaba esisodwa ibonise ukuqina kokuqhekeka kwe-2.9 MPa m1/2ekushiseni kwegumbi.

Ukugqoka i-TaC kuzinqubo ze-Advanced GaN/SiC Semiconductor

Ukuthuthukisa Ukukhula Kwekristalu Elilodwa le-SiC Nge-TaC Coating

Ukugqoka kwe-TaCidlala indima ebalulekile ekuthuthukiseni ukukhula kwekristalu elilodwa le-SiC. Ithuthukisa kakhulu ikhwalithi yekristalu futhi inciphisa amaphutha. Isibonelo, inciphisa amaphutha e-micropipe kuze kufike ku-99.7%. Futhi kunciphisa ukuhlukana komphetho wentambo ngo-80.5%. Izembozo ze-TaC zivimbela ukugqwala kwezingxenye ze-graphite emoyeni oshisayo, oshisa kakhulu we-silicon vapor. I-graphite engagqokwanga iyagqwala, ikhiphe izinhlayiya ze-carbon. Lezi zinhlayiya ziholela ekufakweni kwe-carbon futhi zandisa amaphutha kumakristalu e-SiC akhulayo. Ngokuvikela i-graphite, izembozo ze-TaC ziqinisekisaamakristalu ahlanzekile.

Ukusetshenziswa kwezimbozo ze-TaC kuphumela kumakristalu e-SiC angawodwa anokungcola okuncane kwe-carbon, i-oxygen, kanye ne-nitrogen. Kunciphisa amaphutha onqenqemeni futhi kuthuthukisa ukufana kokumelana. Ngaphezu kwalokho, kunciphisa kakhulu ubuningi bama-micropores kanye nemigodi yokubhoboza.Izifundo zembonikukhombisa ukuthi ukuhlanganiswa kwe-TaC kuxazulula amaphutha onqenqemeni lwekristalu. Kuphinde kunciphise amathuba okwakheka kwe-polycrystalline onqenqemeni lwamakristalu e-SiC. Ucwaningo oluvela e-Eastern European University eKorea luqinisekisa ukuthi ama-graphite crucibles ahlanganiswe ne-TaC anciphisa ngempumelelo ukufakwa kwe-nitrogen. Lesi senzo sinciphisa ukukhiqizwa kwama-microtubules kanye nezinye izinkinga. Ama-crucibles ahlanganiswe ne-TaC agcina isisindo esingashintshi futhi abukeka kahle ngemva kokusetshenziswa isikhathi eside. Abakhiqizi bangaziphinda basebenzise izikhathi eziningi. Banikeza impilo yesevisi efika ku-Amahora angu-200, ukuthuthukisa ukusimama nokusebenza kahle enqubweni yokukhiqiza.

Ukuthuthukisa Ukukhula Kwe-GaN/SiC Epitaxial Nge-TaC Coating

Ukwembozwa kwe-TaC kubaluleke ngokulinganayo ekwenzeni ngcono ukukhula kwe-epitaxial ye-GaN/SiC. Le nqubo idinga indawo ezinzile kakhulu nehlanzekile ukuze kufezwe izendlalelo ze-GaN ezisezingeni eliphezulu kuma-substrate e-SiC. Ukuqina okuphezulu kokushisa kwe-TaC kuqinisekisa ukuthi izingxenye zenqubo zihlala ziphilile ngokwesakhiwo. Lokhu kuzinza kuvimbela ukuwohloka kwezinto ngisho nasemazingeni okushisa aphezulu adingekayo e-epitaxy. Ukuqhuba kwayo okuphezulu kokushisa kusiza ukugcina ukusatshalaliswa kokushisa okunembile nokufana kuyo yonke i-substrate. Lokhu kufana kubalulekile ekuqineni kwefilimu okuhambisanayo kanye nesakhiwo sekristalu.

Ukungangeni kwamakhemikhali kwengubo ye-TaC kuvimbela ukusabela okungafuneki phakathi kwamagesi enqubo kanye nezingxenye ze-reactor. Ukusabela okunjalo kungangenisa ukungcola kungqimba lwe-GaN olukhulayo. Ngokuhlinzeka ngomphezulu ozinzile nongaphenduli, i-TaC ikhuthaza indawo yokukhula ehlanzekile. Le ndawo ibalulekile ekufezeni izakhiwo zikagesi ezifiselekayo kanye nokusebenza kwamadivayisi e-GaN. Ukuqina komshini kwe-TaC nakho kunegalelo ebude besikhathi bezingxenye ze-reactor. Lokhu kuqina kunciphisa isikhathi sokungasebenzi kanye nokugcinwa, okwenza ngcono inqubo yokukhula kwe-epitaxial iyonke.

Ukuvimbela Ukungcola Nokuthuthukisa Isivuno Nge-TaC Coating

Ukuvimbela ukungcola kubaluleke kakhulu ekukhiqizweni kwe-semiconductor, futhi ukuhlanganiswa kwe-TaC kuhamba phambili kule ndawo.imvelo engasebenzi ngamakhemikhaliUkuhlanganiswa kwe-TaC kuvimbela ukusabela okungafuneki. Lokhu kusabela kungangenisa ukungcola endaweni yokukhula. Kusebenza njengesithiyo esiqinile ekungcoleni kwangaphandle. Lesi sici siqinisekisa ukukhiqizwa kwamakristalu ahlanzekile kakhulu. Ukuhlanganiswa kwe-TaC kulungisa ukungcola kanye nokukhubazeka komphetho ngokudala ungqimba oluvikelayo. Lolu ngqimba lumelana nokufakwa kwezinto kanye nokunamathela kwezinhlayiya. Lunciphisa ukungeniswa kokungcola futhi lunciphisa amathuba okuba nokukhubazeka komphetho okwenzeka ezindaweni ezingamboziwe.

Ukuhlanzeka okuphezulu kakhulu kwezimbozo ze-TaC, ezinamazinga okungcola aphansi njenge-<5 ppm, kuhunyushwa ngqo ezintweni ezihlanzekile ze-SiC kanye ne-GaN. Lokhu kuhlanzeka kunciphisa ukwanda kwamaphutha ahlukahlukene, kufaka phakathi ama-micropores kanye nemigodi ye-etch.Ucwaningo oluvela eNyuvesi yaseMpumalanga Yurophu eKoreakubonisa ukuthi izimbobo ze-graphite ezimbozwe nge-tantalum carbide (TaC) zikhawulela ngempumelelo ukufakwa kwe-nitrogen kumakristalu e-SiC. Lo mkhawulo unciphisa ngqo amaphutha afana nama-micropipes, ngaleyo ndlela uthuthukise ikhwalithi yekristalu. Ngokunciphisa ukungcola namaphutha, ukuhlanganiswa kwe-TaC kuthuthukisa kakhulu isivuno esiphelele sama-wafer e-semiconductor asezingeni eliphezulu. Lokhu kuthuthukiswa kuholela ekwakhiweni kwamadivayisi okuthembekile nokuphumelelayo.

Kungani Ukugqoka i-TaC Kuphumelela Kakhulu Ezinye Izindlela

Ukuqhathaniswa Kokusebenza: I-TaC Coating vs. I-SiC Coating kanye ne-Bare Graphite

Ukugqoka kwe-TaCinikeza izinzuzo ezibalulekile ngaphezu kwezinto ezihlukile ezifana ne-SiC coating kanye ne-graphite engenalutho ekukhiqizweni kwe-semiconductor. Izakhiwo zayo ezinhle kakhulu zenza kube ukukhetha okuthandwayo kwezicelo ezidinga kakhulu. I-TaC coating inikeza ukusebenza okuthuthukisiwe ezindaweni ezibalulekile. Lezi zindawo zifaka phakathi ukuzinza kokushisa okuphezulu, ukumelana namakhemikhali, kanye nobumsulwa. Lezi zinzuzo zihumusha ngokuqondile ekuthuthukisweni kokusebenza kahle kwenqubo kanye nekhwalithi yomkhiqizo.

Ukumelana Okuphezulu Kwe-Etch kanye Namazinga Okungcola Kwe-TaC Coating

Ukumbozwa kwe-TaC kubonisa ukumelana okuphezulu kwe-etch. Lesi sici sibalulekile ezingxenyeni ezisebenza ezindaweni ezinzima ze-plasma. Ukumbozwa kwe-CVD TaC kunikeza ukumelana okuhle kakhulu nokugqwala kwamakhemikhali kanye nokuwohloka kokushisa kwamathuluzi okumbozwa. Lokhu kumelana kuqinisekisa ubuqotho besakhiwo samathuluzi ezindaweni ze-plasma, okuvumela ukumbozwa okunembile. Izakhiwo zokulwa nokunamathela kwe-etch nazo zinciphisa ukungcola kwezinhlayiya, zithuthukisa ukuthembeka kwenqubo. Sekukonke, ukumbozwa kwe-TaC kunciphisa ukuguguleka kwamathuluzi futhi kuthuthukisa ukusebenza kahle kokukhiqiza, kwandise isikhathi sokuphila sezingxenye ezisetshenziswayo ze-plasma. Ukumbozwa kwe-Tantalum carbide (TaC) kwandisa kakhulu isikhathi sokuphila sezingxenye ezindaweni ze-plasma. Zisebenza njengesivikelo esivikelayo. Zivikela izingxenye ze-semiconductor ezifana nama-electrode, izinzwa, namakamelo ekuwohlokeni. Lokhu konakala kubangelwa amagesi agqwalisayo, amazinga okushisa aphezulu, kanye nezinqubo zamakhemikhali. Amakamelo okumbozwa agqwaliswe yi-TaC amelana nezindawo ze-plasma ezigqwalisayo ngesikhathi sokwenziwa kwe-semiconductor. Lokhu kumelana kuqinisekisa ubude besikhathi semishini kanye nobuqotho benqubo. Lokhu kuvikela kunciphisa isikhathi sokungasebenzi, izindleko zokugcinwa, kanye nokushintsha, kuthuthukisa umkhiqizo jikelele. Ngaphezu kwalokho, ukumbozwa kwe-TaC kuqhosha ngobumsulwa obuphezulu kakhulu, ngamazinga okungcola avame ukuba ngaphansi kwama-5 ppm. Leli zinga liphansi kakhulu kune-SiC coating noma i-graphite engenalutho, engaqukatha umoya-mpilo ofinyelela ku-260 ppm.

Ukumelana Nokushaqeka Okushisayo kanye Namakhono Okushisa Aphezulu Okugqoka I-TaC

Imibukiso yokugqoka ye-TaCukumelana okuhle kakhulu nokushaqeka kokushisa. Le mpahla inenzuzo enkulu ezintweni ezishintsha ngokushesha nangokuphawulekayo ekushiseni. Iqinisekisa ukuthembeka nokusebenza kwazo ezindaweni ezidinga kakhulu. Le mpahla igcina ubuqotho bayo ngisho nangaphansi kokujikeleza kokushisa okukhulu.Izinga lokushisa eliphezulu lokusebenza lidlula nezinye izindlela.

Ukugqoka i-TaC kunciphisa kakhulu ukungcola futhi kuthuthukisa ukuphathwa kokushisa ekukhiqizweni kwe-semiconductor. Kunikeza ukusebenza okuphezulu uma kuqhathaniswa nezinto ezivamile ezifana nokugqoka i-SiC kanye ne-graphite engenalutho. Lokhu kusetshenziswa okuthuthukisiwe kubalulekile ekuthuthukiseni isivuno kanye nokuthembeka ezinqubweni ze-semiconductor ze-GaN/SiC, okuqhuba intuthuko embonini.

Imibuzo Evame Ukubuzwa

Uyini umsebenzi oyinhloko wokumboza i-TaC ekukhiqizweni kwe-semiconductor?

Ukugqoka kwe-TaCisebenza njengengqimba ye-ceramic esebenza kahle kakhulu. Ivikela izingxenye, inciphisa ukungcola, futhi iphatha ukushisa ngempumelelo. Lokhu kuqinisekisa izimo ezifanele zokukhula kwekristalu.

I-TaC coating iqhathaniswa kanjani ne-SiC coating kanye ne-graphite engenalutho?

I-TaC coating inikeza ukuzinza okuphezulu kakhulu ekushiseni okuphezulu, ukumelana namakhemikhali, kanye nobumsulwa obuphezulu kakhulu. Idlula i-SiC coating kanye ne-graphite engenalutho ezinhlelweni ezibalulekile ze-semiconductor.

Yiziphi izinzuzo ezithile ezilethwa yi-TaC coating ezinqubweni ze-GaN/SiC?

Ukugqoka kwe-TaC kuthuthukisa ukukhula kwekristalu elilodwa le-SiC futhi kuthuthukisa ukukhula kwe-epitaxial ye-GaN/SiC. Kuvimbela ukungcola, kuthuthukisa ukuphathwa kokushisa, futhi kwandisa isivuno kanye nokuthembeka okuphelele.