Ukwenziwa kwee-semiconductor kusebenza kwindawo edibana kuyo iindawo ezichanekileyo kakhulu kunye neendawo ezigqithisileyo. Iinkqubo ezifana ne-epitaxy, ukukhula kwekristale, kunye nokutsalwa kobushushu obuphezulu zihlala zidlula i-1000°C, apho nokuguquguquka okuncinci kobushushu kunokuguqulela kwiinguqu ezilinganisekayo kubukhulu befilimu, ukusasazwa kwe-dopant, kunye nokusebenza kwesixhobo ekugqibeleni. Kule meko, izixhobo ezivumela iindawo ezishushu ezizinzileyo neziphindaphindwayo azincedisi—zisisiseko.
Phakathi kwezi zinto,i-graphite feltiye yavela njengesixhobo esibalulekileyo sokulawula ubushushu kwiinkqubo ze-semiconductor eziphambili. Zidla ngokungahoywa xa zithelekiswa nee-wafers okanye izixhobo zokubeka, iinkqubo zokukhusela i-graphite—ingakumbi i-graphite ecocekileyo kakhulu evakalelwa kukukhusela ubushushu—zidlala indima ebalulekileyo ekugcineni uzinzo lwenkqubo, ukuphucula isivuno, kunye nokuxhasa ukutshintshela kwi-semiconductors ezibanzi ezifana ne-SiC kunye ne-GaN.
Uhlobo lwezinto ezibonakalayo zeGraphite Felt
I-Graphite felt, ngamanye amaxesha ibizwa ngokuba yiifayibha yekhabhoni evaliweyo, sisixhobo esikhaphukhaphu nesingenamibhobho esenziwe ngeefayibha zekhabhoni ezidityanisiweyo ezilungiswe ngobushushu ukuze kufunyanwe ubunyulu obuphezulu kunye nozinzo lwesakhiwo. Ngokuxhomekeke kwiindlela zokucubungula, singabonelelwa njenge-insulation felt ethambileyo,i-graphite eqinileyo, okanye i-graphite hard felt, nganye yenzelwe iimfuno ezithile zobushushu nezoomatshini.
Into eyahlula i-graphite insulation felt kwizinto eziqhelekileyo zokugquma kukudibanisa kwayo iimpawu zayo ezikhethekileyo. Ibonisa ukuhanjiswa kobushushu obuphantsi kakhulu, okuvumela ukugcinwa kobushushu ngokufanelekileyo nakwiindawo ezinobushushu obuphezulu kakhulu. Kwangaxeshanye, igcina ulungelelwaniso lwesakhiwo kumaqondo obushushu angaphezulu kwama-2000°C kwiindawo ezingasebenzi kakuhle okanye ezinciphisayo. Ukungakwazi kwayo ukusebenzisa iikhemikhali kunye namanqanaba aphantsi okungcola—ingakumbi kwizinto ezikumgangatho we-semiconductor—kuqinisekisa umngcipheko omncinci wokungcola, obaluleke kakhulu kwiinkqubo zokwenziwa kwe-front-end.
Kwizicelo eziphambili, i-graphite ecocekileyo kakhulu efakelweyo yokukhusela ubushushu iphuculwa ngakumbi ukuze kuncitshiswe ukungcola kwesinyithi ukuya kumanqanaba e-ppm okanye angaphantsi kwe-ppm. Eli nqanaba lobumsulwa lihambelana neemfuno ezingqongqo zolawulo lokungcola kweefab ze-semiconductor zanamhlanje, ngakumbi kwiinkqubo ezibandakanya ii-semiconductors ezidityanisiweyo.
Izicelo kwiiNkqubo zeSemiconductor eziphambili
Eyona ndlela ibalulekileyo yokusebenzisa i-graphite felt ikubuchule bayo bokuyila nokuqinisa amasimi obushushu kwiindlela ezahlukeneyo zobushushu obuphezulu. Ekukhuleni kwe-epitaxial, nokuba kukwi-silicon, i-silicon carbide, okanye i-gallium nitride, ukugcina usasazo lobushushu olufanayo kumphezulu we-wafer kubalulekile. I-Graphite felt idla ngokudityaniswa kwi-reactor njengomaleko wokukhusela, ojikelezwe zizinto zokufudumeza, okanye obekwe ngasemva kwee-sensors. Ngokunciphisa i-radial kunye ne-axial temperature gradients, ivumela amazinga okukhula ahambelanayo kunye neempawu zezinto ezifanayo, ezichaphazela ngokuthe ngqo ukusebenza kwesixhobo kunye nemveliso.
Kwi-silicon carbide epitaxy, apho amaqondo obushushu enkqubo anokufikelela kwi-1600°C, i-graphite insulation felt iba yinto efunekayo. Indima yayo idlula ubushushu obulula; ibumba ngokusebenzayo iprofayili yobushushu ngaphakathi kwe-reactor, iqinisekisa ukusabela okuzinzileyo kwesigaba somphunga kunye nokunciphisa uxinzelelo lobushushu kwii-wafers. Ngaphandle kolawulo olunjalo, imiba efana nokungalingani kobukhulu, i-wafer warpage, kunye nokwakheka kweziphene iba sobala kakhulu.
Iinkqubo zokukhula kwekristale zigxininisa ngakumbi ukubaluleka kwe-graphite felt. Kwiindlela ezifana nokuthuthwa komphunga ngokwasemzimbeni (PVT) kwiSiC okanye inkqubo yeCzochralski yesilicon, i-thermal gradient ngaphakathi kwigumbi lokukhula imisela umgangatho wekristale. Apha, i-grafite felt eqinileyo okanye i-graphite hard felt idla ngokusetyenziswa ukudala iindawo zokuthintela ezilawulwayo. Ngokulungisa uxinano lwe-felt, ubukhulu, kunye noqwalaselo, iinjineli zinokulungisa ukuhamba kobushushu, ngaloo ndlela zichaphazela amazinga okukhula kwekristale, uxinano lwe-defect, kunye nomgangatho we-boule iyonke. Ekukhuleni kwekristale yeSiC, ulawulo olunjalo lobushushu luhambelana ngokuthe ngqo nokunciphisa ii-micropipes kunye nokusasazeka.
I-Graphite feltikwadlala indima exhasayo kodwa ebalulekileyo kwiinkqubo zokufunxwa komphunga weekhemikhali (CVD) kunye neenkqubo zokufunxwa komphunga weekhemikhali zesinyithi-zendalo (MOCVD). Njengoko i-graphite insulation ivakala, inceda ukugcina imeko-bume yobushushu ezinzileyo ngaphakathi kwe-reactor, inciphisa ukulahleka kobushushu kwaye inciphise imiphumo yodonga olubandayo. Oku kunceda ekuphuculeni ukufana kokufunxwa kunye nokuphindaphinda kwenkqubo, ngakumbi kwiindawo ezinkulu zemveliso.
Kwiinkqubo zokunyusa nokusasaza ezisebenzisa ubushushu obuphezulu, ingakumbi ezo zinxulumene nee-semiconductors ze-wide-bandgap, i-graphite felt inegalelo ekusebenzeni kakuhle kwamandla kunye nokuzinza kobushushu. Ngokunciphisa ukusasazwa kobushushu, ivumela ama-oven ukuba agcine amaqondo obushushu ahambelanayo kunye nokufakwa kwamandla aphantsi, ngelixa ikwanciphisa uxinzelelo lokujikeleza kobushushu kwiinxalenye zenkqubo.
Ngaphaya kokwenziwa kwe-wafer, i-graphite felt isetyenziswa kakhulu ekucutshungulweni kwezinto eziphezulu, kubandakanya ukucocwa komgubo, ukwenziwa kwe-ceramic, kunye nokucocwa kwezinto ze-graphite. Ezi nkqubo, nangona zingabonakali rhoqo kwi-semiconductor fab, zibalulekile ekuveliseni izixhobo ezisebenza kakuhle ezixhasa ukwenziwa kwezixhobo eziphambili.
Iindlela: Ukuya kuBumsulwa obuPhezulu kunye nokuHlanganisa okuSebenzayo
Njengoko ishishini le-semiconductor liguqukela kwizicelo ezifuna amandla ngakumbi—ingakumbi kwizithuthi zombane, amandla avuselelekayo, kunye ne-elektroniki ezisebenzisa amaxesha amaninzi—iimfuno ezibekwe kwizixhobo zolawulo lobushushu ziya ziba nzima ngakumbi. Olu tyekelo lubonakala ngakumbi ekwamkelweni ngokukhawuleza kwezobuchwepheshe be-SiC kunye ne-GaN, apho amaqondo obushushu aphezulu okusebenza kunye neefestile zenkqubo eziqinileyo zifuna ukusebenza okuphezulu kobushushu.
Enye yezona zinto zibalulekileyo kukuqhubela phambili izinto ezicocekileyo kakhulu. I-graphite felt ecocekileyo kakhulu yokukhusela ubushushu iyakhiwa ngamanqanaba aphantsi okungcola ukuhlangabezana nemigangatho yongcoliseko lwezixhobo zesizukulwana esilandelayo. Kwangaxeshanye, izinto ezintsha zesakhiwo ezifana ne-graphite felt eqinileyo kunye ne-graphite hard felt zivumela ulawulo oluchanekileyo lwentsimi yobushushu kunye nobomi benkonzo ende.
Enye indlela ebalulekileyo kukudibanisa izinto zokukhusela, ezifana ne-silicon carbide (SiC), kwiindawo ezithambileyo ze-graphite. Ezi zinto zokukhusela ziphucula ukumelana ne-oxidation, zinciphisa ukuveliswa kwamasuntswana, kwaye zandisa ukuqina kokusebenza, zijongana neminye yemida yendabuko yezinto zokukhusela ezisekelwe kwi-carbon.
Ukujonga phambili,i-graphite feltKulindeleke ukuba iguquke ukusuka kwisixhobo sokukhusela esingasebenziyo ukuya kwinxalenye enobuchule ngakumbi yoyilo lwezixhobo ze-semiconductor. Ngokusebenzisa ukucubungula izinto kunye nokwenza ngokwezifiso, iya kuqhubeka nokuxhasa ukuphishekela koshishino ukusebenza kakuhle, ukuthembeka okukhulu, kunye nolawulo lwenkqubo oluqinileyo.
Ixesha leposi: Epreli-17-2026