Ukukhiqizwa kwe-semiconductor kusebenza ekuxhumaneni kwezindawo ezinembile kakhulu kanye nezindawo ezibucayi kakhulu. Izinqubo ezifana ne-epitaxy, ukukhula kwekristalu, kanye nokufakwa kwezinga lokushisa eliphezulu ngokuvamile kudlula i-1000°C, lapho ngisho nokushintshashintsha okuncane kokushisa kungahumusha kube ukushintshashintsha okulinganiselwe kobukhulu befilimu, ukusatshalaliswa kwe-dopant, kanye nokusebenza kwedivayisi ekugcineni. Kulesi simo, izinto ezivumela izindawo ezishisayo ezizinzile neziphindaphindwayo azisizi—ziyisisekelo.
Phakathi kwalezi zinto,i-graphite feltkuvele njengomthombo obalulekile wokuphathwa kokushisa ezinqubweni ze-semiconductor ezithuthukisiwe. Ngokuvamile azinakwa uma kuqhathaniswa nama-wafer noma imishini yokufaka, izinhlelo zokufaka i-graphite insulation—ikakhulukazi i-graphite ehlanzekile kakhulu ezwayo yokufakwa kwe-heat insulation—zidlala indima ebalulekile ekugcineni ukuzinza kwenqubo, ukuthuthukisa isivuno, kanye nokusekela ukushintshela kuma-semiconductors ane-wide-bandgap njenge-SiC ne-GaN.
Uhlobo Lwezinto Ezibonakalayo Ze-Graphite Felt
I-Graphite felt, ngezinye izikhathi ibizwa ngokuthii-carbon fiber felt, iyinto elula nengenazimbobo eyakhiwe ngemicu yekhabhoni ehlanganisiwe ephathwe ngokushisa ukuze kutholakale ubumsulwa obuphezulu kanye nokuqina kwesakhiwo. Kuye ngezindlela zokucubungula, inganikezwa njenge-felt yokuvikela ethambile,i-graphite eqinile, noma i-graphite hard felt, ngayinye yenzelwe izidingo ezithile zokushisa nezomshini.
Okuhlukanisa i-graphite insulation felt ezintweni ezivamile zokushisa yinhlanganisela yayo eyingqayizivele yezakhiwo. Ibonisa ukuhanjiswa kokushisa okuphansi kakhulu, okuvumela ukugcinwa kokushisa okuphumelelayo ngisho nasezindaweni ezishisa kakhulu. Ngesikhathi esifanayo, igcina ubuqotho besakhiwo emazingeni okushisa angaphezu kuka-2000°C ezindaweni ezingasebenzi kahle noma ezincishisiwe. Ukungangeni kwamakhemikhali kanye namazinga aphansi okungcola—ikakhulukazi ezintweni ezisezingeni le-semiconductor—kuqinisekisa ingozi encane yokungcola, okubaluleke kakhulu ezinqubweni zokwenziwa kwe-front-end.
Ezinhlelweni ezithuthukisiwe, i-graphite ecwebezelayo ehlanzekile kakhulu yokushisa ithuthukiswa kakhulu ukuze kuncishiswe ukungcola kwensimbi kube amazinga e-ppm noma ngisho namazinga e-sub-ppm. Leli zinga lobumsulwa lihambisana nezidingo zokulawula ukungcola okuqinile kwefektri yesimanje ye-semiconductor, ikakhulukazi ezinqubweni ezihilela ama-semiconductor ahlanganisiwe.
Izicelo Ezinqubweni Eziyinhloko Ze-Semiconductor
Ukusetshenziswa okubaluleke kakhulu kwe-graphite felt kusekukwazini kwayo ukuklama nokuqinisa amasimu okushisa kuzo zonke izinqubo eziningi zokushisa okuphezulu. Ekukhuleni kwe-epitaxial, kungakhathaliseki ukuthi kuyi-silicon, i-silicon carbide, noma i-gallium nitride, ukugcina ukusatshalaliswa kokushisa okufanayo phezu kobuso be-wafer kubalulekile. I-Graphite felt ivame ukufakwa ku-reactor njengengqimba yokuvikela, egoqwe ngezinto zokushisa, noma ebekwe ngemuva kwezinzwa. Ngokunciphisa ama-radial kanye nama-axial temperature gradients, ivumela amazinga okukhula ahambisanayo kanye nezakhiwo zezinto ezifanayo, okuthinta ngqo ukusebenza kwedivayisi kanye nokukhiqiza.
Ku-silicon carbide epitaxy, lapho amazinga okushisa enqubo angasondela ku-1600°C, i-graphite insulation felt iba yinto ebaluleke kakhulu. Indima yayo idlulela ngale kokushisa okulula; ibumba ngenkuthalo iphrofayili yokushisa ngaphakathi kwe-reactor, iqinisekisa ukusabela okuzinzile kwesigaba somhwamuko kanye nokunciphisa ukucindezeleka kokushisa kuma-wafer. Ngaphandle kokulawula okunjalo, izinkinga ezifana nokungalingani kobukhulu, i-wafer warpage, kanye nokwakheka kwamaphutha kuba sobala kakhulu.
Izinqubo zokukhula kwekristalu ziqokomisa ukubaluleka kwesu le-graphite felt. Ezindleleni ezifana nokuthuthwa komhwamuko ngokomzimba (i-PVT) kwe-SiC noma inqubo ye-Czochralski ye-silicon, i-gradient yokushisa ngaphakathi kwegumbi lokukhula inquma ikhwalithi yekristalu. Lapha, i-gradient graphite felt noma i-gradient hard felt ivame ukusetshenziswa ukudala izindawo zokuvikela ezilawulwayo. Ngokulungisa ubuningi be-felt, ukujiya, kanye nokucushwa, onjiniyela bangakwazi ukulungisa ukugeleza kokushisa, ngaleyo ndlela bethonya amazinga okukhula kwekristalu, ubuningi besici, kanye nekhwalithi ye-boule iyonke. Ekukhuleni kwekristalu ye-SiC, ukuphathwa okunjalo kokushisa kuhlobene ngqo nokunciphisa ama-micropipes kanye nokuhlukana.
I-Graphite feltfuthi idlala indima esekelayo kodwa ebalulekile ekufakweni komphunga wamakhemikhali (i-CVD) kanye nezinhlelo zokufakwa komphunga wamakhemikhali wensimbi-organic (i-MOCVD). Njengoba kuzwakala sengathi i-graphite insulation, isiza ukugcina indawo eshisayo ezinzile ngaphakathi kwe-reactor, inciphisa ukulahleka kokushisa futhi inciphise imiphumela yodonga olubandayo. Lokhu kunegalelo ekuthuthukisweni kokufana kokufakwa kanye nokuphindaphinda kwenqubo, ikakhulukazi ezindaweni zokukhiqiza ezinkulu.
Ezinqubweni zokushisa okuphezulu zokufaka umoya kanye nokusabalalisa, ikakhulukazi lezo ezihlotshaniswa nama-semiconductor e-wide-bandgap, i-graphite felt inegalelo ekusebenzeni kahle kwamandla kanye nokuzinza kokushisa. Ngokunciphisa ukushabalaliswa kokushisa, ivumela ama-furnace ukuthi agcine amazinga okushisa ahambisanayo ngokufakwa kwamandla aphansi, kuyilapho futhi kunciphisa ukucindezeleka kokujikeleza kokushisa ezingxenyeni zenqubo.
Ngaphandle kokwenziwa kwe-wafer, i-graphite felt isetshenziswa kabanzi ekucubungulweni kwezinto ezisezingeni eliphezulu, okuhlanganisa ukuthungwa kwempuphu, ukwenziwa kwe-ceramic, kanye nokuhlanzwa kwezingxenye ze-graphite. Lezi zinqubo, nakuba zingabonakali ngaso sonke isikhathi ngaphakathi kwendwangu ye-semiconductor, zibalulekile ekukhiqizeni izinto zokusebenza okuphezulu ezisekela ukukhiqizwa kwamadivayisi athuthukile.
Amathrendi: Ukuya Ekuhlanzekeni Okuphezulu Nokuhlanganiswa Kokusebenza
Njengoba imboni ye-semiconductor ithuthuka iye ekusetshenzisweni okunzima kakhulu—ikakhulukazi ezimotweni zikagesi, amandla avuselelekayo, kanye ne-electronics ezivame kakhulu—izidingo ezibekwa ezintweni zokuphatha ukushisa ziya ngokuya ziba nzima. Lo mkhuba ubonakala kakhulu ekwamukelweni okusheshayo kobuchwepheshe be-SiC ne-GaN, lapho amazinga okushisa aphezulu okusebenza kanye namafasitela enqubo aqinile kudinga ukusebenza okuphezulu kokushisa.
Enye yentuthuko ebaluleke kakhulu ukuqhubekela phambili ezintweni ezihlanzekile kakhulu. I-graphite felt ehlanzekile kakhulu yokuvikela ukushisa ikhiqizwa ngamazinga okungcola aphansi njalo ukuze kuhlangatshezwane nezindinganiso zokungcola zezinhlobo zesizukulwane esilandelayo. Ngesikhathi esifanayo, izinto ezintsha zesakhiwo ezifana ne-graphite felt eqinile kanye ne-graphite hard felt zenza kube lula ukulawula insimu yokushisa okunembile kanye nokuphila isikhathi eside kwenkonzo.
Esinye isici esibalulekile ukuhlanganiswa kwezimbozo zokuvikela, njenge-silicon carbide (SiC), ezindaweni ezithambile ze-graphite. Lezi zimbozo zithuthukisa ukumelana nokushiswa kwe-oxidation, zinciphisa ukukhiqizwa kwezinhlayiya, futhi zandise ukuqina kokusebenza, zibhekana neminye yemikhawulo yendabuko yezinto zokuvikela ezisekelwe ku-carbon.
Uma ngibheka phambili,i-graphite feltkulindeleke ukuthi iguquke isuke endaweni yokushisa engasebenzi iye engxenyeni eklanywe kakhulu yomklamo wemishini ye-semiconductor. Ngokucutshungulwa kwezinto ezithuthukisiwe kanye nokwenza ngokwezifiso, izoqhubeka nokusekela ukuphishekela kwemboni ukusebenza kahle okuphezulu, ukuthembeka okukhulu, kanye nokulawula inqubo okuqinile.
Isikhathi sokuthunyelwe: Ephreli-17-2026