Ucwaningo Lwesibonelo: Izingxenye ze-Graphite Ezihlanzekile Kakhulu Zamasimu Okushisa Angama-intshi angu-32 e-Monocrystalline ku-N-Type Silicon Growth
Umbhali:UDkt. Steven Qiu, Unjiniyela Omkhulu Wezinto Zokwenza Izinto Ze-Semiconductor kanye noMqondisi Wezobuchwepheshe kwa-VET Energy
Kushicilelwe:Agasti 2026 | Umbiko Wensimu Yobuchwepheshe kanye Nokuhlaziywa Kobunjiniyela
Isifinyezo Sabaphathi kanye Nokubuka Konke Kwephrojekthi
- Imboni:Ukukhiqizwa kwe-Silicon Wafer ye-Solar PV kanye ne-Semiconductor
- Inqubo:I-Czochralski (CZ) N-Type (TOPCon/HJT) I-Monocrystalline Ingot Pulling
- Imishini:Izithando Zensimu Ezishisayo Ezinkulu Ezingamasentimitha angu-32 (Amayunithi angu-50 Ahloliwe)
- Isixazululo:Izingxenye ze-Graphite ezihlanjululwe nge-Deep Halogen (Umlotha ≤ 2-5 ppm) + i-CVD SiC Coating
- Umthelela Olinganiselwe:Isikhathi Sokuphila Senkampani Encane Sikhushuliwe kusukela ku-<100 μs kuya ku->380 μs; I-Ingot Yield +18%; Isikhathi Sokuphila Sensimu Yokushisa +30%.
Isingeniso: Inselele Yensimu Yokushisa Engamasentimitha angu-32 Ekukhuleni Kwe-Silicon Yohlobo lwe-N Esebenza Kakhulu
Njengoba imboni ye-photovoltaics ishintsha ngokushesha isuka ku-P-type PERC iye ku-N-type TOPCon kanye ne-Heterojunction (HJT) solar cells, isidingo sama-silicon wafers ahlanzekile kakhulu sikhuphuke kakhulu. Ama-substrates e-silicon ohlobo lwe-N adinga isikhathi sokuphila esiphezulu kakhulu sokuthwala (ngokuvamile >300 μs) kanye nokungcola kwensimbi okuguqukayo okuseduze no-zero.
Ukuze kwandiswe umkhiqizo, abakhiqizi be-silicon wafer bandisa ubukhulu be-crucible bube ngamasentimitha angu-32 nangaphezulu. Kodwa-ke, ukusebenza emazingeni okushisa angaphezu kuka-1,450°C ensimini yokushisa engamasentimitha angu-32 kuletha izinselele ezinkulu zobunjiniyela:
- Ukuwohloka Kokushisa Nokungalingani:Ukushisa okukhulu kubangela ukuguquka kwesakhiwo kanye nokuqhekeka kwama-heater nama-pedestal ajwayelekile e-graphite.
- Ukungcola Kwensimbi Okuguquguqukayo:Izinto zokungcola ezilandelanayo (i-Fe, i-Ni, i-Cu, i-V) ngaphakathi kwe-graphite evamile ziyahwamuka ngesikhathi sokudonsa ikristalu isikhathi eside, zithuthele ngqo ku-silicon encibilikisiwe futhi zibangele ukuwohloka okukhulu kwempilo yonke yenkampani ethwala izinto ezincane.
Isixazululo Sobunjiniyela: I-Ultra-Purified Isostatic Graphite kanye ne-CVD SiC Shielding
Ukuze kunqotshwe lezi zingqinamba zobuchwepheshe, i-VeTek Semiconductor ifake ukuthuthukiswa kwezinto eziphelele kuyo yonke inhlangano yensimu yokushisa engamasentimitha angu-32, equkethe i-graphite ephezulu kakhulu ehlanjululwe yi-halogen yokushisa okuphezulu kanye ne-CVD Silicon Carbide (SiC) coating evikelayo.
1. Ukuhlanzwa kwe-Halogen Ejulile (Okuqukethwe Komlotha ≤ 2-5 ppm)
I-graphite ejwayelekile yezimboni iqukethe okuqukethwe komlotha omningi okusukela ku-50 ppm kuya ku-200 ppm. Ku-1,450°C ngaphansi kwe-vacuum, lezi zinto ezincane ziyashintshashintsha. Inqubo yethu yokuhlanza igesi ye-Halogen yokushisa okuphezulu iguqula ukungcola kwensimbi kube ama-halogen compounds aguquguqukayo (ama-chloride/ama-fluoride) emazingeni okushisa angaphezu kuka-2,400°C.
- Ukuhlolwa kwe-Glow Discharge Mass Spectrometry (GDMS)iqinisekisa ukuthi ukungcola okuphelele kwensimbi (i-Fe, i-Cr, i-Ni, i-Cu, i-V) kwehliswe kwaba ngaphansi kuka-0.5 ppm, okufinyelela okuqukethwe komlotha okuphelele okungu-≤ 2 ppm.
- Umphumela:Iqeda ukuvela kwegesi yensimbi engemuva, ivikele ichibi le-silicon elincibilikisiwe ekungcoleni phakathi namahora angaphezu kuka-120 okujikeleza okuqhubekayo.
2. Isakhiwo se-Graphite Esingenawo Ubuningi Obuningi Sokuzinza Kokushisa
Izingxenye ezifaka phakathi i-graphite heater, i-crucible susceptor, kanye ne-insulation barrel zenziwa ngomshini we-high-density (1.85 g/cm³), i-fine-grain (usayizi we-grain <10 μm) isostatic graphite. Ukucindezela kwe-isostatic kuqinisekisa ukwanda kwe-isotropic thermal (CTE) okulinganayo, okuvimbela ukucindezeleka kwe-thermal okusendaweni, ukugoba, kanye nokuqhekeka komshini ngaphansi kwemijikelezo ye-thermal ephindaphindwayo.
3. Isivikelo se-CVD Silicon Carbide (SiC) Coating
Izingxenye ezibalulekile ezivezwe kumusi we-silicon kanye namagesi okuhlanza agqwalisayo ambozwe ungqimba olujiyile lwama-50–80 μm lwe-Chemical Vapor Deposition (CVD) Silicon Carbide (SiC).
- Isithiyo Sokugqwala:Ivimbela ukusabela kwamakhemikhali okuqondile phakathi komphunga we-silicon oguquguqukayo (i-SiO2) kanye ne-graphite substrate (i-SiO2 + 2C → i-SiC + CO2), iqeda ukuguguleka komhlaba kanye nokukhiqizwa kothuli lwekhabhoni.
- Ukunemba kweJomethri:Igcina i-geometry yensimu yokushisa eqondile ngaphezu kwezikhawu zesevisi ezinde ezingama-30%.
Idatha Yokusebenza Elinganisiwe kanye Nokuqinisekiswa Kwesilingo Sensimu
Kwenziwe isivivinyo sokuqhathanisa sensimu sezinyanga eziyi-6 kuzo zonke izitofu ze-CZ ezingama-intshi angu-32 ezingama-intshi angu-50 esikalini sokukhiqiza esikhungweni sokukhiqiza i-TOPCon silicon wafer esisezingeni eli-1. Ngezansi kunesilinganiso sokusebenza esiqhathanisa izingxenye ze-graphite ezijwayelekile nesisombululo sensimu yokushisa esihlanziwe se-VeTek Semiconductor:
| Isilinganiso sokusebenza | Insimu Yokushisa Ejwayelekile Ye-Graphite | I-VeTek Purified Graphite Solution |
|---|---|---|
| Okuqukethwe Komlotha Obuningi beGraphite | 50 – 100 ppm | ≤ 2 – 5 ppm (I-Halogen Ehlanjululwe) |
| Ukungcola Okuphelele Kwensimbi (i-GDMS) | ~15 – 30 ppm (Fe, Ni, V) | < 0.5 ppm |
| Isikhathi Sokuphila Senkampani Encane Ephakathi | 85 – 120 μs (Ukwehluka Okuphezulu) | 380 – 450 μs (Okuphakeme Njalo) |
| Isikhathi Sokuphila Sengxenye Yensimu Yokushisa | Ama-60 – 75 Ama-Draw Cycles | Imijikelezo Yokudonsa engu-90 – 105 (+30%) |
| Izinga Lokukhushulwa Kwe-Ingot Yebanga le-A N Uhlobo | 74.5% | 92.5% (+18% Ukuthuthukiswa Kwesivuno) |
Imibuzo Evame Ukubuzwa (Imibuzo Evame Ukubuzwa)
Q1: Iyini imbangela eyinhloko yokulahlekelwa yisivuno ekudonseleni kwe-silicon monocrystalline engu-32-intshi N?
A1:Ukulahlekelwa kwesivuno kubangelwa kakhulu ukungcola kwensimbi (ukunciphisa isikhathi sokuphila kwenkampani encane) kanye nokuguquguquka kokushisa kwesakhiwo kwama-heater e-graphite anobubanzi obukhulu, okuphazamisa isikhombimsebenzisi sekristalu esiqinile.
Umbuzo 2: Ukuhlanzwa kwe-halogen kufinyelela kanjani okuqukethwe komlotha ngaphansi kwe-5 ppm?
A2:Ukuhlanzwa kwe-halogen kubeka izingxenye ze-graphite emazingeni okushisa aphezulu (>2,400°C) ngenkathi kufakwa igesi ye-chlorine ne-fluorine. Lawa magesi asabela ngezakhi zensimbi ezijulile, aziguqule zibe yi-halide yensimbi eguquguqukayo ephumayo, ishiye i-graphite emsulwa kakhulu.
Umbuzo 3: Ingabe ukugqoka kwe-CVD SiC kungaphinde kufakwe noma kufakwe kuzo zonke izingxenye zensimu yokushisa ye-graphite?
A3:Isembozo se-CVD SiC sisetshenziswa kahle ezingxenyeni eziguga kakhulu njengezitsha ze-graphite, iziqondiso zokugeleza, ama-heater, kanye nama-insulation barrels. Kuye ngokuguga kwe-substrate, izingxenye ezikhethiwe zingashintshwa futhi zifakwe i-coating, kwehlisa izindleko zokusebenza zizonke.
Isiphetho kanye nokubonisana ngobuchwepheshe
Ukuthuthukela ezingxenyeni ze-graphite ezihlanjululwe kakhulu nge-CVD SiC protection kunikeza indlela eqondile nelinganiswayo yokuxazulula izithiyo zokukhiqiza nokungcola ekukhuleni kwe-silicon ye-monocrystalline engu-32-intshi N. Ngokuthuthuka okungu-18% kwe-prime yield kanye nokuphila kwesikhathi eside kwensimu yokushisa okungu-30%, abakhiqizi be-solar wafer bangafinyelela i-ROI enkulu.
Lungiselela Insimu Yakho Yokushisa Ye-Monocrystalline Namuhla
Landa i-Full Technical Data Sheet (TDS) noma uxhumane nochwepheshe bethu bobunjiniyela ukuze uthole isilinganiso esenziwe ngokwezifiso.
Lungiselela Insimu Yakho Yokushisa Ye-Monocrystalline Namuhla
Landa i-Full Technical Data Sheet (TDS) noma uxhumane nochwepheshe bethu bobunjiniyela ukuze uthole isilinganiso esenziwe ngokwezifiso.
Isikhathi sokuthunyelwe: Agasti-15-2026