SiC coating graphite MOCVD Wafer carriers

All of our susceptors are made of high-strength isostatic graphite. Benefit from the high purity of our graphites – developed especially for challenging processes like epitaxy, crystal growing, ion implantation and plasma etching, as well as for the production of LED chips.

Product Description
         SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere.
         CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.

Compon

Special advantages of our SiC-coated graphite susceptors include extremely high purity, homogenous coating and an excellent service life. They also have high chemical resistance and thermal stability properties.

We maintain very close tolerances when applying the SiC coating, using high-precision machining to ensure a uniform susceptor profile. We also produce materials with ideal electrical resistance properties for use in inductively heated systems. All finished components come with a purity and dimensional compliance certificate.

Application:

Features:
· Excellent Thermal Shock Resistance
· Excellent Physical Shock Resistance
· Excellent Chemical Resistance
· Super High Purity
· Availability in Complex Shape
· Usable under Oxidizing AtmosphereTypical Properties of Base Graphite Material: