SiC coating coated of Graphite substrate for Semiconductor,Silicon carbide coating,MOCVD Susceptor
Special advantages of our SiC-coated graphite susceptors include extremely high purity, homogenous coating and an excellent service life. They also have high chemical resistance and thermal stability properties.
SiC coating of Graphite substrate for Semiconductor applications produces a part with superior purity and resistance to oxidizing atmosphere.
CVD SiC or CVI SiC is applied to Graphite of simple or complex design parts. Coating can be applied in varying thicknesses and to very large parts.
· Excellent Thermal Shock Resistance
· Excellent Physical Shock Resistance
· Excellent Chemical Resistance
· Super High Purity
· Availability in Complex Shape
· Usable under Oxidizing Atmosphere
Typical Properties of Base Graphite Material:
|Apparent Density:||1.85 g/cm3|
|Electrical Resistivity:||11 μΩm|
|Flexural Strenth:||49 MPa (500kgf/cm2)|
|Thermal Conductivity:||116 W/mK (100 kcal/mhr-℃)|
Carbon supplies susceptors and graphite components for all current epitaxy reactors. Our portfolio includes barrel susceptors for applied and LPE units, pancake susceptors for LPE, CSD, and Gemini units, and single-wafer susceptors for applied and ASM units.By combining strong partnerships with leading OEMs, materials expertise and manufacturing know-how, SGL offers the optimal design for your application.