1. SiC crystal growth technology route
PVT (sublimation method),
HTCVD (high temperature CVD),
LPE (liquid phase method)
are three common SiC crystal growth methods;
The most recognized meth...
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1.Silicon carbide powder doping technology
Doping an appropriate amount of Ce element in silicon carbide powder can achieve the effect of stable growth of the single crystal form of 4H-SiC. Practic...
Reaction-sintered silicon carbide porcelain has good compressive strength at ambient temperature, heat resistance to air oxidation, good wear resistance, good heat resistance, small coefficient of ...
Recrystallized silicon carbide (RSiC) ceramics are a high-performance ceramic material. Due to its excellent high temperature resistance, oxidation resistance, corrosion resistance and high hardnes...