1.Silicon carbide powder doping technology
Doping an appropriate amount of Ce element in silicon carbide powder can achieve the effect of stable growth of the single crystal form of 4H-SiC. Practic...
The PVT method, whose full name is Physical Vapor Transportation, is a common method for growing silicon carbide (SiC)crystals under high temperature and high pressure. Its basic principle is to he...
In the field of advanced energy storage, flow batteries have gradually emerged as a scalable and long-duration solution, particularly for stationary applications such as grid balancing, renewable e...
Pune, April 17, 2020 (GLOBE NEWSWIRE) — The global automotive electric water pump market size is projected to reach USD 6690.8 million by 2026, surging at a CAGR of 14.0% during the forecast ...
Universal Hydrogen’s hydrogen fuel cell demonstrator made its maiden flight to Moss Lake, Washington, last week. The test flight lasted 15 minutes and reached an altitude of 3,500 feet. The t...
Graphite susceptor cracking and corrosion primarily result from thermal stress, chemical reactions with process gases, and material impurities. Preventing these defects involves optimizing material...