Sabuwar hanyar da za a haɗa layukan semiconductors masu siriri kamar 'yan nanomita kaɗan ta haifar da ba wai kawai binciken kimiyya ba, har ma da sabon nau'in transistor don na'urorin lantarki masu ƙarfi. Sakamakon, wanda aka buga a cikin Applied Physics Letters, ya jawo sha'awa sosai.
Wannan nasarar ta samo asali ne sakamakon haɗin gwiwa tsakanin masana kimiyya a Jami'ar Linköping da SweGaN, wani kamfani da ya ƙware a binciken kimiyyar kayan aiki a LiU. Kamfanin yana ƙera kayan lantarki da aka ƙera daga gallium nitride.
Gallium nitride, GaN, wani sinadari ne da ake amfani da shi wajen samar da ingantattun na'urori masu fitar da haske. Duk da haka, yana iya zama da amfani a wasu aikace-aikace, kamar transistors, domin yana iya jure yanayin zafi mafi girma da ƙarfin halin yanzu fiye da sauran na'urori masu amfani da wutar lantarki da yawa. Waɗannan muhimman halaye ne ga abubuwan lantarki na gaba, musamman ga waɗanda ake amfani da su a cikin motocin lantarki.
Ana barin tururin Gallium nitride ya narke a kan wani wafer na silicon carbide, yana samar da sirara mai laushi. Hanyar da ake shuka wani abu mai lu'ulu'u a kan wani abu ana kiranta "epitaxy." Sau da yawa ana amfani da wannan hanyar a masana'antar semiconductor tunda tana ba da babban 'yanci wajen tantance tsarin lu'ulu'u da kuma sinadaran fim ɗin nanometer da aka samar.
Haɗin gallium nitride, GaN, da silicon carbide, SiC (dukansu biyu suna iya jure wa filayen lantarki masu ƙarfi), yana tabbatar da cewa da'irori sun dace da aikace-aikacen da ake buƙatar babban ƙarfi.
Duk da haka, daidaiton da ke tsakanin kayan kristal guda biyu, gallium nitride da silicon carbide, ba shi da kyau. Kwayoyin halittar ba su daidaita da juna ba, wanda hakan ke haifar da gazawar transistor. An magance wannan ta hanyar bincike, wanda daga baya ya haifar da mafita ta kasuwanci, inda aka sanya wani sirara na aluminum nitride tsakanin layukan biyu.
Injiniyoyin SweGaN sun lura da cewa transistors ɗinsu na iya jure wa ƙarfin filin da ya fi girma fiye da yadda suke tsammani, kuma da farko ba su fahimci dalilin ba. Ana iya samun amsar a matakin atomic - a cikin wasu mahimman wurare na tsakiya a cikin abubuwan da ke cikin.
Masu bincike a LiU da SweGaN, karkashin jagorancin Lars Hultman da Jun Lu na LiU, sun gabatar da bayani a cikin Applied Physics Letters game da wannan lamari, kuma sun bayyana hanyar ƙera transistor masu ƙarfin juriya ga manyan ƙarfin lantarki.
Masana kimiyya sun gano wata hanyar girma ta epitaxial da ba a san ta ba wadda suka sanya wa suna "transmorphic epitaxial growth." Yana sa a hankali shaye-shayen nau'ikan da ke tsakanin layuka daban-daban a cikin layuka biyu na atoms. Wannan yana nufin cewa za su iya girma layuka biyu, gallium nitride da aluminum nitride, akan silicon carbide ta yadda za su iya sarrafa matakin atomic yadda yadudduka ke da alaƙa da juna a cikin kayan. A cikin dakin gwaje-gwaje sun nuna cewa kayan yana jure babban ƙarfin lantarki, har zuwa 1800 V. Idan aka sanya irin wannan ƙarfin lantarki a kan wani abu da aka yi da silicon na gargajiya, walƙiya za ta fara tashi kuma transistor ɗin zai lalace.
"Muna taya SweGaN murna yayin da suka fara tallata wannan ƙirƙira. Yana nuna haɗin gwiwa mai inganci da kuma amfani da sakamakon bincike a cikin al'umma. Saboda kusancin da muke da shi da abokan aikinmu na baya waɗanda yanzu ke aiki a kamfanin, bincikenmu yana da tasiri cikin sauri a wajen duniyar ilimi," in ji Lars Hultman.
Kayan da Jami'ar Linköping ta bayar. Monica Westman Svenselius ce ta rubuta ta asali. Lura: Ana iya gyara abubuwan da ke ciki don salo da tsayi.
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Lokacin Saƙo: Mayu-11-2020